SavantIC Semiconductor Product Specification 2SC2944 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed switching ·High reliability ·Low saturation voltage APPLICATIONS ·Color & B/W TV power supply ·Active power filter ·Industrial use power supply ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 15 A IB Base current (DC) 5 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX UNIT 1.25 /W SavantIC Semiconductor Product Specification 2SC2944 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ; IC=0 7 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0 250 V VCE(sat) Collector-emitter saturation voltage IC=6A ;IB=1.2A 0.8 V VBE(sat) Base-emitter saturation voltage IC=6A ;IB=1.2A 1.2 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=5V 20 TYP. MAX UNIT 80 Switching times ton Turn-on time ts Storage time tf Fall time IC=10A; IB1=-IB2=2A RL=5APw=20µs,DutyB2% 2 0.8 µs 1.5 µs 0.4 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2944