2SD1897 - Savantic

SavantIC Semiconductor
Product Specification
2SD1897
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High power dissipation:[email protected]=25
APPLICATIONS
·For low frequency power amplifier,power
driver and DC-DC converter applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
ICM
Collector current-Peak
10
A
PC
Collector power dissipation
TC=25
30
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1897
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA , IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=50µA , IE=0
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50µA , IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=100V IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IE=-0.5A ; VCE=5V;f=5MHz
Cob
Output capacitance
IE=0 ; VCB=10V ,f=1MHz
hFE Classifications
D
E
F
60-120
100-200
160-320
2
MIN
TYP.
60
MAX
UNIT
320
8
MHz
100
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SD1897