RK4410 Transistors Switching (30V, 10A) RK4410 (4) +0.1 0.5− zEquivalent circuit (8) (7) (6) (5) (4) ROHM : SOP8 (8) (7) (6) (5) (1) (2) (3) (4) ∗ (1) (2) (3) (4) (5) (6) (7) (8) (1) (2) (3) Source Source Source Gate Drain Drain Drain Drain ∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous ID 10 A Pulsed IDP∗ 40 A Reverse Drain Current Continuous IDR 10 A Pulsed IDRP∗ Source Current (Body Diode) Continuous Drain Current +0.15 3.9− +0.3 6.0− 40 A Is Isp∗ 1.3 A 5.2 A Total Power Dissipation(Tc=25˚C) PD 2 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg −55∼+150 ˚C Pulsed ∗ Pw≤10ms, Duty cycle≤1% (1) 0.15 +0.1 1.5− +0.1 0.2− (8) zStructure Silicon N-channel MOS FET 1.27 Max.1.75 (5) +0.1 0.4− 0.1 zExternal dimensions (Units : mm) +0.2 5.0− zFeatures 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. Each lead has same dimensions RK4410 Transistors zThermal resistance (Ta=25°C) Parameter Channel to Ambient Symbol Limits Unit Rth(ch-A) 62.5 ˚C / W zElectrical characteristics (Ta=25°C) Parameter Gate-Source Leakage Symbol Gate Threshold Voltage Static Drain-Source On-State Resistance Typ. Max. Unit Test Conditions − − ±10 µA VGS=±20V, VDS=0V 30 − − V ID=1mA, VGS=0V IDSS − − 10 µA VDS=30V, VGS=0V VGS (th) 1.0 − 2.5 V − 9 12 − 13 18 − 15 20 IGSS Drain-Source Breakdown Voltage V (BR) DSS Zero Gate Voltage Drain Current Min. RDS (on) VDS=10V, ID=1mA ID=10A, VGS=10V mΩ ID=10A, VGS=4.5V ID=10A, VGS=4V l Yfs l∗ 10 − − S ID=10A, VDS=10V Input Capacitance Ciss − 1750 − pF VDS=10V Output Capacitance Coss − 950 − pF VGS=0V Crss td (on)∗ − 450 − pF f=1MHz − 20 − ns ID=5A, VDD 15V t r∗ − 55 − ns VGS=10V td (off)∗ tf∗ − 100 − ns RL=3Ω − 70 − ns RGS=10Ω − 44.8 89.6 nC VDD=15V Gate-Source Charge Q g∗ Qgs∗ − 5.9 − nC VGS=10V Gate-Drain Charge Qgd∗ − 12.2 − nC ID=10A Forward Transfer Admittance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge ∗ Pulsed zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C) Parameter Symbol VSD∗ Min. Typ. Max. Unit − − 1.5 V Is=5.2A, VGS=0V Reverse Recovery Time trr∗ − 240 − ns IDR=5.2A, VGS=0V Reverse Recovery Charge Qrr∗ − 310 − nC di/dt=100A/µs Forward Voltage ∗ Pulsed Test Conditions RK4410 Transistors 0.1 0.5 1.0 1.5 SOURCE - DRAIN VOLTAGE : VGS (V) Fig.1 Reverse Drein Current vs. Source - Drain Voltage 0.01 1 0.01 0.01 10 3.000 2.000 1.000 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (˚C) Fig.7 Gate Threshold Voltage vs. Channel Temperature 1 0.016 0.050 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 −50 −25 0 25 50 75 100 125 150 Ta=25˚C Pulsed 0.040 0.030 ID =10A 5A 0.020 0.010 0.000 0 Ta=25˚C f=1MHz VGS=0V Pulsed Ciss 1000 Coss Crss 100 10 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.8 Typical Capacitance vs. Drain-Source Voltage 2 4 6 8 10 12 14 16 18 20 GATE-SOURCE VOLTAGE : VGS(V) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature 10000 10 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ) CHANNEL TEMPERATURE : Tch (˚C) CAPACITANCE : C (pF) GATE THRESHOLD VOLTAGE : VGS (th) (V) VDS=10V ID=1mA Pulsed 0 0.01 DRAIN CURRENT : I D (A) VGS=10V ID=10A Pulsed 0.018 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) 0.000 −50 −25 Ta=125˚C 75˚C 25˚C −25˚C 0.001 0.1 10 1 0.1 DRAIN CURRENT : I D (A) DRAIN CURRENT : I D(A) 4.000 0.1 0.020 Ta=125˚C 75˚C 25˚C −25˚C 0.001 0.1 0.1 VGS=10V Pulsed Fig.2 Forward Transfer Admittance vs. Drain Current VGS=4V Pulsed 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 Ta=−25˚C 25˚C 75˚C 125˚C 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 0.01 0.0 1 VDS=10V Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 30 15 25 VGS 20 15 10 VDS 10 5 5 0 0 8 16 24 32 40 Ta=25˚C VDD=24V ID=10A Pulsed 0 48 56 64 TOTAL GATE CHARGE : Qg (nC) Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) Ta=125˚C 75˚C 25˚C 1 −25˚C 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS=0V Pulsed DRAIN-SOURCE VOLTAGE : VDS (V) REVERSE DREIN CURRENT : IDR (A) 10 FORWARD TRANSFER ADMITTANCE : I YfS I (S) zElectrical characteristic curves RK4410 Transistors 20 td (off) 100 Ta=25˚C VDD=30V VGS=10V RG=10Ω Pulsed VGS=6V VGS=4.5V VGS=4V VGS=3.5V 18 DRAIN CURRENT : ID (A) SWITCHING TIME : t (ns) 1000 tf tr td (on) 10 16 Ta=25˚C Pulsed VGS=3V 14 12 10 8 6 VGS=2.5V 4 2 1 0.1 1 0 0 10 DRAIN CURRENT : I D (A) 2 Fig.10 Switching Characteristics NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE D=1 D=0.5 D=0.2 0.1 0.01 0.001 10µ D=0.1 D=0.05 Tc=25˚C qth (ch-c) (t)=r (t) θth (ch-c) qth (ch-c)=6.25˚C / W D=0.02 D=0.01 D=Single PW T 100µ 1m 6 8 10 Fig.11 Typical Output Characteristics 10 1 4 DRAIN-SOURCE VOLTAGE : VDS (V) 10m 1 D=PW T 10 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width 100