Preliminary Datasheet RJK1536DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1612-0300 Rev.3.00 Jun 30, 2010 Features VDSS : 150 V RDS(on) : 30 m (Max) ID : 50 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S 3 Application Motor control, Lighting control, Solenoid control, DC-DC converter, etc. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS VGSS ID ID (pulse) IDR Ratings 150 ±20 50 100 50 Unit V V A A A Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature IDR (pulse) Note2 IAP Pch Note1 ch-c Tch Tstg 100 25 125 1.0 150 –55 to +150 A A W C/W C C Notes: 1. Value at Tc = 25C 2. STch = 25C, Tch 150C, L = 100 H REJ03G1612-0300 Rev.3.00 Jun 30, 2010 Page 1 of 6 RJK1536DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) VDS(on) RDS(on) Min 150 — — 2.0 — — Typ — — — 3.0 0.60 24 Max — 100 ±0.1 4.0 0.75 30 Unit V A A V V m Ciss Coss Crss td(on) tr td(off) tf VDF trr — — — — — — — — — 5000 560 165 50 75 250 100 0.9 130 — — — — — — — 1.5 — pF pF pF ns ns ns ns V ns Test conditions ID = 1 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = 20 V, VDS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 25 A, VGS = 10 V Note3 ID = 25 A, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 80 V ID = 25 A VGS = 10 V RG = 25 IF = 25 A, VGS = 0 IF = 50 A, VGS = 0 diF/dt = 100 A/s Notes: 3. Pulse test REJ03G1612-0300 Rev.3.00 Jun 30, 2010 Page 2 of 6 RJK1536DPE Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Drain Current ID (A) 125 100 70 50 25 0 50 50 100 150 10 100 10 10 0.1 Operation in this area is limited by RDS(on) 1 100 10 1000 Typical Output Characteristics Typical Transfer Characteristics 50 VDS = 10 V Pulse Test 40 30 4V 20 VGS = 3.8 V 10 Drain Current ID (A) 4.2 V 40 30 20 10 Tc = 75°C Pulse Test 2 4 6 8 0 10 1 2 3 25°C −25°C 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source on State Resistance vs. Gate to Source Voltage Drain to Source on State Resistance vs. Drain Current 30 Pulse Test 28 26 24 ID = 50 A 22 25 A 5A 20 0 4 8 12 16 20 Gate to Source Voltage VGS (V) REJ03G1612-0300 Rev.3.00 Jun 30, 2010 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance RDS(on) (mΩ) μs Drain to Source Voltage VDS (V) 10 V 0 μs 1 0.01 0.1 200 0 Case Temperature Tc (°C) 7V Drain Current ID (A) Ta = 25°C ms =1 ) PW shot (1 Channel Dissipation Pch (W) 150 100 VGS = 10 V 10 Pulse Test 1 1 10 100 Drain Current ID (A) Page 3 of 6 RJK1536DPE Preliminary Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 60 VGS = 10 V Pulse Test 50 40 25 A ID = 50 A 30 10 A 20 10 −25 0 25 50 75 100 125 150 Tc = −25°C 100 10 25°C 1 75°C VDS = 10 V Pulse Test 0.1 0.1 1 10 100 Drain Current Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage ID (A) 10000 1000 Ciss 100 1000 Coss Crss 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz 10 10 1 10 10 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 ID = 50 A VDD = 50 V 80 V 100 V 120 12 VDS VGS 80 8 40 4 VDD = 100 V 80 V 50 V 40 80 0 120 160 Gate Charge Qg (nC) REJ03G1612-0300 Rev.3.00 Jun 30, 2010 200 1000 Switching Time t (ns) 160 0 1 100 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 1000 Case Temperature Tc (°C) Capacitance C (pF) Reverse Recovery Time trr (ns) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance vs. Temperature VGS = 10 V, VDD = 80 V PW = 5 μs, duty ≤ 1 % RG = 25 Ω tf td(off) tr 100 td(on) 10 1 10 100 Drain Current ID (A) Page 4 of 6 RJK1536DPE Preliminary Reverse Drain Current vs. Source to Drain Voltage Avalanche Current vs.Case Temperature 30 Pulse Test Avalanche Current IAP (A) Reverse Drain Current IDR (A) 50 40 10 V 30 5V 20 VGS = 0 V, -5 V 10 0 0.4 0.8 1.2 1.6 25 20 15 10 5 0 25 2.0 L = 100 μH Source to Drain Voltage VSD (V) 50 75 100 125 150 175 200 Case Temperature Tc (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.2 0.1 0.05 0.03 θch – c(t) = γs (t) • θch – c θch – c = 1.00°C/W, Tc = 25°C 0.02 0.1 1 0.0 e uls tp PDM o sh 1 PW T D= PW T 0.01 100 μ 1m 10 m Pulse Width 100 m 1 PW (s) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 25 Ω Vin 10 V Vin Vout VDD = 80 V 10% 10% 90% td(on) REJ03G1612-0300 Rev.3.00 Jun 30, 2010 10 tr 10% 90% td(off) tf Page 5 of 6 RJK1536DPE Preliminary Package Dimensions JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g (1.4) 4.44 ± 0.2 7.8 6.6 (1.5) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Part Name RJK1536DPE-00-J3 REJ03G1612-0300 Rev.3.00 Jun 30, 2010 Quantity 1000 pcs Shipping Container Taping Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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