P0080SA

Thyristor/SMB Series
Description of Part Number
P thyristor for circuit protection
Part Number
P
030
0
S
B
Code
①
②
③
④
⑤
Main
Suffix
① PRODUCT TYPE
Product type
P
TYPE
② MEDIAN VOLTAGE RATING
Code
030
Median voltage rating
30 V
③ CONSTRUCTION VARIABLE
Code
0
1
2
3
Product shape
One chip
Unidirectional part
Two chips
Three chips
④ PACKAGE TYPE
Code
E
S
R
L
M
PACKAGE TYPE
TO–92
SMB/DO–214AA
SMA/DO-214AC
DO-15
DO-27
⑤ IPP RATING
Code
A
B
C
D
IPP RATING
150 A (8x20 µs)
250 A (8x20 µs)
400 A (8x20 µs)
1000 A (8x20 µs)
Applications
When protecting telecommunication circuits, P devices are connected across Tip and Ring for metallic protection
and across Tip and Ground and Ring and Ground for longitudinal protection. They typically are placed behind some
type of current-limiting device. Common applications include:
• Central office line cards (SLICs)
• T-1/E-1, ISDN, and xDSL transmission equipment
• Customer Premises Equipment (CPE) such as phones, modems, and caller ID adjunct boxes
• PBXs, KSUs, and other switches
• Primary protection including main distribution frames, five-pin modules, building entrance equipment, and station
protection modules
• Data lines and security systems
• CATV line amplifiers and power inserters
• Sprinkler systems
REV.2015.02.01
01 | www.spsemi.cn
Thyristor/SMB Series
P Device (S series)
DO-214AA P solid state protection devices protect telecommunications equipment such as
modems, line cards, fax machines, and other CPE.
P devices are used to enable equipment to meet various regulatory requirements including
GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).
Electrical Parameters
VRM
Volts
VS
Volts
VT
Volts
IDRM
µAmps
IS
mAmps
IT
Amps **
IH
mAmps
P0080S_
6
25
4
5
800
2.2
50
50-125
P0300S_
25
40
4
5
800
2.2
150
70-175
P0640S_
58
77
4
5
800
2.2
150
55-140
P0720S_
65
88
4
5
800
2.2
150
55-140
P0900S_
75
98
4
5
800
2.2
150
55-140
P2300S_
190
260
4
5
800
2.2
150
45-115
P2600S_
220
300
4
5
800
2.2
150
40-100
P3100S_
275
350
4
5
800
2.2
150
35-90
P3500S_
320
400
4
5
800
2.2
150
30-75
Part
Number *
CO
pF
* For individual “SA”, “SB”, and “SC”surge ratings, see table below
Surge Ratings
Series
IPP
2x10 µs
Amps
IPP
8x20 µs
Amps
A
150
150
B
250
250
C
500
400
200
IPP
10x160 µs
Amps
IPP
10x560 µs
Amps
IPP
10x1000 µs
Amps
ITSM
60 Hz
Amps
di/dt
Amps/µs
90
50
150
100
45
20
500
80
30
500
150
100
50
500
Thermal Considerations
Package
DO-214AA
Symbol
TJ
TS
RBJA
Parameter
Operating Junction
Temperature
Storage
Temperature Range
Thermal
Resistance:
Junction to Ambient
Value
Unit
-40 to +150
°C
-65 to +150
°C
90
°C/W
DO-214AA (SMB J-Bend)
0.012 (0.305)
0.006 (0.152)
0.102 (2.6)
0.083 (2.1)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.073 (1.85)
0.060 (1.52)
0.030 (0.76)
0.193 (4.90)
0.160 (4.06)
26
REV.2015.02.01
0.012 (0.3) MAX.
0.220 (5.59)
0.195 (4.95)
Dimensions in inches and(millimeters)
02 | www.spsemi.cn
Thyristor/SMB Series
The Basic Characteristic of the P
„
The principle introduction
Operation
In the standby mode, P devices exhibit a high off-state impedance, eliminating excessive leakage currents
and appearing transparent to the circuits they protect. Upon application of a voltage exceeding the switching
voltage (VS), P devices crowbar and simulate a short circuit condition until the current flowing through the
device is either interrupted or drops below the P device’s holding current (I
H).
Once this occurs, P devices
reset and return to their high off-state impedance.
Figure1 V-I Characteristics
Figure2 tr x td Pulse Wave-form
Figure3
Normalized VS Change versus Junction Temperature
Figure4
Normalized DC Holding Current
REV.2015.02.01
03 | www.spsemi.cn