Thyristor/T0-92 Series Description of Part Number P thyristor for circuit protection Part Number P 310 Code ① ② 0 E B ③ ④ ⑤ Main Suffix ① PRODUCT TYPE Product type P TYPE ② MEDIAN VOLTAGE RATING Code 310 Median voltage rating 310 V ③ CONSTRUCTION VARIABLE Code 0 1 2 3 Product shape One chip Unidirectional part Two chips Three chips ④ PACKAGE TYPE Code E S R L M PACKAGE TYPE TO–92 SMB/DO–214AA SMA/DO-214AC DO-15 DO-27 ⑤ IPP RATING Code A B C D IPP RATING 150 A (8x20 µs) 250 A (8x20 µs) 400 A (8x20 µs) 1000 A (8x20 µs) Applications When protecting telecommunication circuits, P devices are connected across Tip and Ring for metallic protection and across Tip and Ground and Ring and Ground for longitudinal protection. They typically are placed behind some type of current-limiting device. Common applications include: • Central office line cards (SLICs) • T-1/E-1, ISDN, and xDSL transmission equipment • Customer Premises Equipment (CPE) such as phones, modems, and caller ID adjunct boxes • PBXs, KSUs, and other switches • Primary protection including main distribution frames, five-pin modules, building entrance equipment, and station protection modules • Data lines and security systems • CATV line amplifiers and power inserters • Sprinkler systems REV.2015.02.01 01 | www.spsemi.cn Thyristor/T0-92 Series P Device (E series) TO-92 P solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. P devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68) Electrical Parameters Part Number * VDRM Volts VS Volts VT Volts IDRM µAmps IS mAmps IT Amps ** IH mAmps CO pF P0080E_ 6 25 4 5 800 2.2 50 50-125 P0300E_ 25 40 4 5 800 2.2 150 70-175 P0640E_ 58 77 4 5 800 2.2 150 55-140 P0720E_ 65 88 4 5 800 2.2 150 55-140 P0900E_ 75 98 4 5 800 2.2 150 55-140 P2300E_ 190 260 4 5 800 2.2 150 45-115 P2600E_ 220 300 4 5 800 2.2 150 40-100 P3100E_ 275 350 4 5 800 2.2 150 35-90 P3500E_ 320 400 4 5 800 2.2 150 30-75 * For individual “EA”, “EB”, and “EC”surge ratings, see table below Surge Ratings Series IPP 2x10 µs Amps IPP 8x20 µs Amps IPP 10x160 µs Amps IPP 10x560 µs Amps IPP 10x1000 µs Amps ITSM 60 Hz Amps di/dt Amps/µs A 150 150 B 250 250 90 50 45 20 500 150 100 80 30 500 C 500 400 200 150 100 50 500 Thermal Considerations Package TO-92 Symbol Parameter Value Unit TJ Operating Junction Temperature -40 to +150 °C TS Storage Temperature Range -65 to +150 °C RBJA Thermal Resistance: Junction to Ambient 90 °C/W 28 REV.2015.02.01 02 | www.spsemi.cn Thyristor/T0-92 Series The Basic Characteristic of the P The principle introduction Operation In the standby mode, P devices exhibit a high off-state impedance, eliminating excessive leakage currents and appearing transparent to the circuits they protect. Upon application of a voltage exceeding the switching voltage (VS), P devices crowbar and simulate a short circuit condition until the current flowing through the device is either interrupted or drops below the P device’s holding current (I H). Once this occurs, P devices reset and return to their high off-state impedance. Figure1 V-I Characteristics Figure2 tr x td Pulse Wave-form Figure3 Normalized VS Change versus Junction Temperature Figure4 Normalized DC Holding Current REV.2015.02.01 03 | www.spsemi.cn