RENESAS RQA0009SXAQS_11

Preliminary Datasheet
RQA0009SXAQS
R07DS0493EJ0200
(Previous: REJ03G1566-0100)
Rev.2.00
Jun 28, 2011
Silicon N-Channel MOS FET
Features
 High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(VDS = 6 V, f = 520 MHz)
 Compact package capable of surface mounting
 Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
3
3
2
1
1. Gate
2. Source
3. Drain
4. Source
1
4
2, 4
Note:
Marking is “SX”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Ratings
16
±5
3.2
15
150
Unit
V
V
A
W
C
Tstg
–55 to +150
C
Note: Value at Tc = 25C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
Page 1 of 21
RQA0009SXAQS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
PAE
Min.
—
—
0.15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
0.5
3.2
76
40
3.5
33.1
2.0
65.7
38.6
7.2
62.5
33.0
2.0
68.5
38.8
7.6
Max.
15
±2
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
S
pF
pF
pF
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
—
—
—
—
—
—
—
—
—
—
—
—
—
69.2
33.1
2.1
66.4
39.0
8.0
67.9
35.2
3.3
60
37.8
6.0
65
—
—
—
—
—
—
—
—
—
—
—
—
—
%
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
%
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 1.6 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 3.6 V, IDQ = 200 mA
f = 155 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 155 MHz,
Pin = +25 dBm (316 mW)
VDS = 3.6 V, IDQ = 200 mA
f = 360 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 360 MHz,
Pin = +25 dBm (316 mW)
VDS = 3.6 V, IDQ = 200 mA
f = 465 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 465 MHz,
Pin = +25 dBm (316 mW)
VDS = 4.8 V, IDQ = 300 mA
f = 465 MHz,
Pin = +17 dBm (50 mW)
VDS = 6 V, IDQ = 180 mA
f = 520 MHz,
Pin = +25 dBm (316 mW)
Main Characteristics
Typical Output Characteristics
20
Pulse Test
4
2.0 V
Drain Current ID (A)
Channel Power Dissipation Pch (W)
Maximum Channel Power
Dissipation Curve
15
10
5
0
0
50
100
150
Case Temperature TC (°C)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
200
1.75 V
3
1.5 V
2
1.25 V
1
0
VGS = 1.0 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Page 2 of 21
RQA0009SXAQS
Preliminary
Forward Transfer Admittance
vs. Drain Current
4
VDS = 6 V
Pulse Test
3
|yfs|
2
ID
1
0
0
0.5
1.0
1.5
2.0
Forward Transfer Admittance |yfs| (S)
Drain Current ID (A)
Forward Transfer Admittance |yfs| (S)
Typical Transfer Characterisitics
1.0
0.1
0.1
1.0
10.0
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
Output Capacitance vs.
Drain to Source Voltage
80
70
60
50
VDS = 0
f = 1 MHz
40
-5 -4 -3 -2 -1
0
1
2
3
4
Output Capacitance Coss (pF)
1000
5
100
VGS = 0
f = 1 MHz
10
0.1
10
1
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
MSG, MAG vs. Frequency
100
VGS = 0
f = 1 MHz
10
1
0.1
1
Drain to Gate Voltage VDG (V)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
10
Maximum Stable Gain MSG (dB)
Maximum Available Gain MAG (dB)
Input Capacitance Ciss (pF)
VDS = 6 V
Pulse Test
Gate to Source Voltage VGS (V)
90
Reverse Transfer Capacitance Crss (pF)
10.0
30
VDS = 6 V
ID = 180 mA
25
MSG
20
15
MAG
10
5
0
0
500
1000
1500
2000
Frequency f (MHz)
Page 3 of 21
RQA0009SXAQS
Preliminary
Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 155 MHz)
VDD
VGG
C4
C5
C12
C13
R2
C11
C3
50 Ω
C1
C2
L4
R1
L1
C9
L2
C6
C7
L3
C10
50 Ω
RF OUT
RF IN
C8
L1
L2
L3
L4
R1
R2
100 pF Chip Capacitor
27 pF Chip Capacitor
1000 pF Chip Capacitor
1 μF/+16V Chip Tantalum Capacitor
18 pF Chip Capacitor
22 pF Chip Capacitor
56 pF Chip Capacitor
4 pF Chip Capacitor
33 nH Chip Inductor
3.6 nH Chip Inductor
7.5 nH Chip Inductor
8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
33 Ω Chip Resistor
1 kΩ Chip Resistor
Output Power, Drain Current
vs. Input Power
Pout
VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz
30
25
ID
20
1.5
1
15
0.5
10
5
10
15
20
25
30
60
PG
20
40
10
20
VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz
0
0
30
0
5
10
15
20
25
0
30
Input Power Pin (dBm)
Input Power Pin (dBm)
Output Power, Drain Current
vs. Frequency
Power Gain, Power Added Efficiency
vs. Frequency
40
Pout
35
3
30
2.5
25
2
30
25
ID
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
15
1.5
1
0.5
10
0
120 130 140 150 160 170 180 190
Frequency f (MHz)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
Power Gain PG (dB)
0
20
2
Drain Current ID (A)
2.5
35
Power Gain PG (dB)
PAE
Drain Current ID (A)
Output Power Pout (dBm)
80
40
80
PAE
70
60
20
15
PG
10
5
0
50
40
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
30
Power Added Efficiency PAE (%)
3
40
Output Power Pout (dBm)
Power Gain, Power Added Efficiency
vs. Input Power
Power Added Efficiency PAE (%)
C1, C3, C10, C11
C2
C4, C13
C5, C12
C6
C7
C8
C9
20
120 130 140 150 160 170 180 190
Frequency f (MHz)
Page 4 of 21
RQA0009SXAQS
Preliminary
ID
20
1
IDQ = 200 mA
f = 155MHz
Pin = +20dBm
15
3
4
3.5
4.5
10
20
IDQ = 200 mA
f = 155 MHz
Pin = +20dBm
3.5
4
0
4.5
5
Output Power, Drain Current
vs. Idling Current
Power Gain, Power Added Efficiency
vs. Idling Current
40
3
25
1.5
ID
1
VDS = 3.6V
0.5
f = 155 MHz
Pin = +20 dBm
0
300
400
500
15
100
200
Power Gain PG (dB)
2.5
2
20
80
PAE
Pout
Drain Current ID (A)
30
60
20
40
PG
10
20
VDS = 3.6 V
f = 155 MHz
Pin = +20 dBm
0
0
100
200
300
400
0
500
Idling Current IDQ (mA)
Idling Current IDQ (mA)
Output Power, Drain Current
vs. Input Power
Power Gain, Power Added Efficiency
vs. Input Power
3.0
40
35
2.5
Pout
2.0
30
ID
25
1.5
1.0
20
VDS = 7 V
f = 155 MHz
IDQ = 200 mA
15
10
5
10
15
20
25
Input Power Pin (dBm)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
0.5
0
30
Power Gain PG (dB)
Pout (dBm)
Output Power
PG
0
3
0
30
0
40
Drain to Source Voltage VDS (V)
35
10
0
Pout (dBm)
5
20
Drain to Source Voltage VDS (V)
40
Output Power
0.5
60
40
80
30
60
PG
20
40
PAE
10
VDS = 7 V
f = 155 MHz
IDQ = 200 mA
0
0
5
10
15
20
25
20
0
30
Power Added Efficiency PAE (%)
1.5
30
Power Added Efficiency PAE (%)
25
80
PAE
Power Gain PG (dB)
2
Drain Current ID (A)
30
Drain Current ID (A)
Pout (dBm)
Output Power
2.5
Pout
35
10
40
3
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
Output Power, Drain Current
vs. Drain to Source Voltage
Input Power Pin (dBm)
Page 5 of 21
RQA0009SXAQS
Preliminary
Output Power, Drain Current
vs. Frequency
1.5
20
1
VDS = 7V
IDQ = 200 mA 0.5
Pin = +25 dBm
0
10
120 130 140 150 160 170 180 190
15
20
60
15
50
PG
10
40
VDS = 7V
30
IDQ =200 mA
Pin = +25 dBm
0
20
120 130 140 150 160 170 180 190
Frequency f (MHz)
Frequency f (MHz)
Output Power, Drain Current
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
40
4
3
30
2
ID
20
1
IDQ = 200 mA
Pin = +25 dBm
f = 155 MHz
6
4
8
80
PAE
Power Gain PG (dB)
Pout
40
30
60
20
40
PG
10
0
2
0
10
20
IDQ = 200 mA
Pin = +25 dBm
f = 155 MHz
4
6
8
0
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Output Power, Drain Current
vs. Idling Current
Power Gain, Power Added Efficiency
vs. Idling Current
40
40
3
80
Pout
2.5
30
2
1.5
25
ID
1
20
15
100
200
VDS = 7V
0.5
Pin = +25 dBm
f = 155 MHz
0
300
400
500
Idling Current IDQ (mA)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
PAE
Power Gain PG (dB)
35
10
0
70
5
Drain Current ID (A)
Pout (dBm)
Output Power
PAE
30
60
20
40
PG
10
0
0
20
VDS = 7 V
Pin = +25 dBm
f = 155 MHz
100
200
300
400
Power Added Efficiency PAE (%)
25
30
Power Added Efficiency PAE (%)
ID
10
2
Pout (dBm)
25
2
50
Output Power
2.5
Power Gain PG (dB)
30
30
Drain Current ID (A)
Pout
35
3
Drain Current ID (A)
Output Power
Pout (dBm)
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Frequency
0
500
Idling Current IDQ (mA)
Page 6 of 21
RQA0009SXAQS
Preliminary
Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 360 MHz)
VDD
C14
VGG
C5
C15
C6
C13
C4
L4
R1
C3
C11
L1
L3
50 Ω
C12
RFOUT
RFIN
C2
22 pF Chip Capacitor
10 pF Chip Capacitor
100 pF Chip Capacitor
1000 pF Chip Capacitor
1 μF / +16V Chip Tantalum Capacitor
5 pF Chip Capacitor
12 pF Chip Capacitor
C8
L1
L2
L3
L4
R1
6.8 nH Chip Inductor
1.0 nH Chip Inductor
1.6 nH Chip Inductor
8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
6.8k Ω Chip Resistor
Power Gain, Power Added Efficiency
vs. Input Power
Output Power, Drain Current
vs. Input Power
3
Pout
30
2
25
1.5
20
1
ID
15
5
10
15
PG
20
40
10
20
VDS = 3.6 V
IDQ = 200 mA
f = 360 MHz
0
5
10
15
20
25
0
30
Input Power Pin (dBm)
Output Power, Drain Current
vs. Frequency
Power Gain, Power Added Efficiency
vs. Frequency
Pout
3
30
2.5
25
2
30
25
ID
20
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
1.5
1
15
10
300
60
Input Power Pin (dBm)
40
35
30
0
0.5
320
340
360
380
Frequency f (MHz)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
0
400
Power Gain PG (dB)
0
VDS = 3.6 V
IDQ = 200 mA 0.5
f = 360 MHz
0
20
25
30
Drain Current ID (A)
2.5
35
Power Gain PG (dB)
PAE
10
Output Power Pout (dBm)
80
40
Drain Current ID (A)
Output Power Pout (dBm)
40
C10
Power Added Efficiency PAE (%)
C1
C2, C3,C8,C10
C4, C13
C5, C12, C15
C6, C14
C7
C9, C11
C7
80
PAE
70
60
20
15
PG
10
40
VDS = 3.6V
IDQ = 200 mA
Pin = +20dBm
5
0
300
50
350
30
20
400
Power Added Efficiency PAE (%)
50 Ω C1
C9
L2
Frequency f (MHz)
Page 7 of 21
RQA0009SXAQS
Preliminary
1.5
20
1
ID
IDQ = 200 mA
f = 360MHz
Pin=+20dBm
15
4
3.5
3
4.5
5
20
40
PG
10
20
IDQ = 200 mA
f = 360 MHz
Pin=+20dBm
0
3
0
0
3.5
4
4.5
5
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Output Power, Drain Current
vs. Idling Current
Power Gain, Power Added Efficiency
vs. Idling Current
40
3
80
Pout
35
2.5
2
30
VDS = 3.6V
1.5
f = 360 MHz
Pin = +20 dBm
1
25
20
ID
0.5
15
100
300
200
400
0
500
60
20
40
PG
10
20
VDS = 3.6 V
f = 360 MHz
Pin = +20 dBm
100
200
300
400
0
500
Idling Current IDQ (mA)
Idling Current IDQ (mA)
Output Power, Drain Current
vs. Input Power
Power Gain, Power Added Efficiency
vs. Input Power
40
3
35
2.5
Pout
30
2
25
1.5
ID
20
1
VDS = 7 V
IDQ = 200 mA
f = 360 MHz
15
10
0
30
0
0
5
10
15
20
25
Input Power Pin (dBm)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
0.5
0
30
80
40
PAE
Power Gain PG (dB)
10
0
Power Gain PG (dB)
PAE
Drain Current ID (A)
Pout (dBm)
0.5
60
30
60
PG
20
40
10
VDS = 7 V
IDQ = 200 mA
f = 360 MHz
0
0
5
10
15
20
25
20
Power Added Efficiency PAE (%)
25
30
Power Added Efficiency PAE (%)
2
Power Gain PG (dB)
30
Drain Current ID (A)
2.5
Pout
Drain Current ID (A)
Pout (dBm)
Output Power
35
40
Output Power
80
PAE
10
Output Power Pout (dBm)
40
3
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
Output Power, Drain Current
vs. Drain to Source Voltage
0
30
Input Power Pin (dBm)
Page 8 of 21
RQA0009SXAQS
Preliminary
25
30
2
1.5
20
1
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
15
10
300
0.5
0
400
350
10
40
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
5
300
30
20
400
350
Output Power, Drain Current
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
40
80
Pout
40
3
2
30
ID
20
IDQ = 200 mA 1
Pin = +25 dBm
f = 360MHz
6
4
8
Power Gain PG (dB)
PAE
Drain Current ID (A)
30
60
20
40
PG
10
20
IDQ = 200 mA
Pin = +25 dBm
f = 360MHz
0
2
0
10
4
6
0
10
8
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Output Power, Drain Current
vs. Idling Current
Power Gain, Power Added Efficiency
vs. Idling Current
40
40
3
Pout
35
2.5
30
2
1.5
25
ID
1
20
15
10
0
100
80
PAE
200
VDS = 7V
0.5
Pin = +25 dBm
f = 360 MHz
0
300
400
500
Idling Current IDQ (mA)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
Power Gain PG (dB)
Pout (dBm)
Output Power
50
Frequency f (MHz)
4
10
2
Pout (dBm)
PG
15
Frequency f (MHz)
50
Output Power
60
20
0
Drain Current ID (A)
Output Power Pout (dBm)
ID
25
70
PAE
30
60
20
40
PG
10
0
0
VDS = 7 V
Pin = +25 dBm
f = 360 MHz
100
200
300
400
20
0
500
Power Added Efficiency PAE (%)
2.5
Pout
80
Power Added Efficiency PAE (%)
35
Power Gain PG (dB)
30
Drain Current ID (A)
3
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Frequency
Output Power, Drain Current
vs. Frequency
Idling Current IDQ (mA)
Page 9 of 21
RQA0009SXAQS
Preliminary
Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 465 MHz)
VDD
C14
VGG
C5
C15
C6
C13
C4
L4
R1
C3
C11
L1
L3
C12
50 Ω
RFOUT
RFIN
22 pF Chip Capacitor
10 pF Chip Capacitor
100 pF Chip Capacitor
1000 pF Chip Capacitor
1 μF / +16V Chip Tantalum Capacitor
7 pF Chip Capacitor
C9
C11
L1
L2, L3
L4
R1
2.5
Pout
2
25
1.5
1
ID
VDS = 3.6 V
IDQ = 200 mA
f = 465 MHz
15
10
0
5
10
15
20
25
PAE
0.5
Power Gain PG (dB)
35
80
40
Drain Current ID (A)
3
30
60
PG
20
10
0
5
10
15
20
25
0
30
Input Power Pin (dBm)
Output Power, Drain Current
vs. Frequency
Power Gain, Power Added Efficiency
vs. Frequency
30
35
2.5
25
30
2
25
1.5
Pout
ID
20
1
VDS = 3.6 V
IDQ = 200 mA
Pin = +20dBm
450
460
0.5
470
480
Frequency f (MHz)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
0
490
Power Gain PG (dB)
3
10
440
20
VDS = 3.6 V
IDQ = 200 mA
f = 465 MHz
Input Power Pin (dBm)
40
15
40
0
0
30
Drain Current ID (A)
Output Power Pout (dBm)
40
20
12 pF Chip Capacitor
2 pF Chip Capacitor
2.7 nH Chip Inductor
1.0 nH Chip Inductor
8 Turns D: 0.5 mm,f2.4mm Enamel Wire
6.8k Ω Chip Resistor
Power Gain, Power Added Efficiency
vs. Input Power
Output Power, Drain Current
vs. Input Power
30
C10
80
PAE
70
60
20
PG
15
50
10
5
0
40
VDS = 3.6 V
IDQ = 200 mA
Pin = +20dBm
440
450
460
30
470
480
20
490
Power Added Efficiency PAE (%)
C1
C2, C3, C7, C10
C4, C13
C5, C12, C15
C6, C14
C8
Output Power Pout (dBm)
C8
C7
C2
Power Added Efficiency PAE (%)
50 Ω C1
C9
L2
Frequency f (MHz)
Page 10 of 21
RQA0009SXAQS
Preliminary
1.5
20
1
ID
IDQ = 200 mA
f = 465MHz
Pin=+20dBm
15
4
3.5
3
4.5
5
20
40
PG
10
0
3.5
4.5
5
Drain to Source Voltage VDS (V)
Output Power, Drain Current
vs. Idling Current
Power Gain, Power Added Efficiency
vs. Idling Current
40
3
80
PAE
2.5
30
2
25
1.5
ID
1
20
VDS = 3.6V
0.5
Pin = +20 dBm
f = 465 MHz
0
300
400
500
15
100
200
Power Gain PG (dB)
Pout
30
60
VDS = 3.6 V
Pin = +20 dBm
f = 465 MHz
20
PG
40
10
0
0
20
100
200
300
400
0
500
Idling Current IDQ (mA)
Idling Current IDQ (mA)
Output Power, Drain Current
vs. Input Power
Power Gain, Power Added Efficiency
vs. Input Power
3
35
2.5
Pout
30
2
25
1.5
20
1
ID
VDS = 7 V
IDQ = 200 mA
f = 465 MHz
15
10
5
10
15
20
25
Input Power Pin (dBm)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
0.5
0
30
40
Power Gain PG (dB)
40
0
4
Drain to Source Voltage VDS (V)
35
10
0
20
IDQ = 200 mA
f = 465 MHz
Pin=+20dBm
0
3
0
Drain Current ID (A)
Pout (dBm)
0.5
60
80
PAE
30
60
PG
20
40
10
VDS = 7 V
IDQ = 200 mA
f = 465 MHz
0
0
5
10
15
20
25
20
0
30
Power Added Efficiency PAE (%)
25
30
Power Added Efficiency PAE (%)
2
Power Gain PG (dB)
30
Drain Current ID (A)
2.5
Pout
Drain Current ID (A)
Pout (dBm)
Output Power
35
40
Output Power
80
PAE
10
Output Power Pout (dBm)
40
3
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
Output Power, Drain Current
vs. Drain to Source Voltage
Input Power Pin (dBm)
Page 11 of 21
RQA0009SXAQS
Preliminary
25
30
2
1.5
20
1
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
15
10
440
450
460
470
480
0.5
0
490
50
10
40
VDS = 7V
IDQ = 200 mA
Pin = +25dBm
5
440
450
30
470
460
480
20
490
Frequency f (MHz)
Output Power, Drain Current
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
40
4
3
30
2
ID
20
IDQ = 200 mA
Pin = +25dBm
f = 465MHz
6
4
8
1
Power Gain PG (dB)
Pout
40
Drain Current ID (A)
80
30
60
20
40
PG
10
4
6
8
0
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Output Power, Drain Current
vs. Idling Current
Power Gain, Power Added Efficiency
vs. Idling Current
40
40
3
2.5
30
2
1.5
25
ID
1
20
15
100
80
PAE
Pout
35
10
0
20
IDQ = 200 mA
Pin = +25dBm
f = 465MHz
0
2
0
10
200
VDS = 7V
0.5
Pin = +25 dBm
f = 465 MHz
0
300
400
500
Idling Current IDQ (mA)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
Power Gain PG (dB)
Pout (dBm)
Output Power
PG
15
PAE
10
2
Pout (dBm)
60
Frequency f (MHz)
50
Output Power
70
20
0
Drain Current ID (A)
Output Power Pout (dBm)
ID
25
PAE
30
60
20
40
PG
10
0
0
20
VDS = 7 V
Pin = +25 dBm
f = 465 MHz
100
200
300
400
0
500
Power Added Efficiency PAE (%)
2.5
Pout
80
Power Added Efficiency PAE (%)
35
Power Gain PG (dB)
30
Drain Current ID (A)
3
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Frequency
Output Power, Drain Current
vs. Frequency
Idling Current IDQ (mA)
Page 12 of 21
RQA0009SXAQS
Preliminary
Evaluation Circuit (f = 465 [email protected]=4.8V)
C7
C6
C13
C14
VG
VD
R2
C5
C12
R1
L3
L1
50 Ω C1
L2
C11 50 Ω
RFOUT
RFIN
C2
C1, C5, C11, C12
C2, C8
C3
C4, C9, C10
C6, C13
C7, C14
L1
L2
L3
R1
R2
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
C3
C4
C8
C9
C10
100 pF Chip Capacitor
22 pF Chip Capacitor
15 pF Chip Capacitor
10 pF Chip Capacitor
2200 pF Chip Capacitor
1 μF / 35 V Chip Tantalum Capacitor
1 nH Chip Inductor
1.8 nH Chip Inductor
8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
670 Ω Chip Resistor
6.8 kΩ Chip Resistor
Page 13 of 21
RQA0009SXAQS
Preliminary
Output Power, Drain Current
vs. Input Power
1.6
25
1.0
ID
20
0.8
15
0.6
10
0.4
VDS = 4.8 V
IDQ = 300 mA
f = 465 MHz
5
5
10
15
20
25
20
80
15
60
10
40
PAE
VDS = 4.8 V
IDQ = 300 mA
f = 465 MHz
5
0.2
20
0
30
0
0
30
0
5
10
15
20
25
Input Power Pin (dBm)
Power Gain, Power Added Efficiency
vs. Frequency
Input Return Loss vs. Frequency
80
19
70
PAE
18
60
PG
17
VDS = 4.8 V
IDQ = 300 mA
Pin = +17 dBm
16
450
455
460
465
470
475
50
40
480
0
Input Return Loss RL (dB)
20
Power Added Efficiency PAE (%)
Input Power Pin (dBm)
-5
-10
-15
-20
VDS = 4.8 V
IDQ = 300 mA
Pin = +17 dBm
-25
-30
450
455
460
465
470
475
480
Frequency f (MHz)
Frequency f (MHz)
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency
vs. Idling Current
PG
65
20
60
19
PAE
18
55
17
50
16
15
3
4
5
IDQ = 300 mA
45
f = 465 MHz
Pin = +17 dBm
40
6
7
8
Drain to Source Voltage VDS (V)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
70
21
Power Gain PG (dB)
70
21
20
65
PAE
60
19
PG
18
55
17
50
16
15
0
0.1
0.2
VDS = 4.8 V
45
f = 465 MHz
Pin = +17 dBm
40
0.3
0.4
0.5
Power Added Efficiency PAE (%)
1.2
Power Gain PG (dB)
30
PG
Drain Current ID (A)
Pout
0
Power Gain PG (dB)
100
1.4
35
0
Power Gain PG (dB)
25
Power Added Efficiency PAE (%)
Output Power Pout (dBm)
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Input Power
Idling Current IDQ (A)
Page 14 of 21
RQA0009SXAQS
Preliminary
Evaluation Circuit (f = 520 MHz)
C6
C5
C13
C12
VG
VD
R2
C4
C11
R1
L1
L2
50 Ω C1
IN
C10 50 Ω
L3
OUT
C2
C1, C4, C10, C11
C2
C3
C5, C12
C6, C13
C7
C8
C9
L1
L2
L3
R1
R2
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
C3
C7
C8
C9
100 pF Chip Capacitor
22 pF Chip Capacitor
5 pF Chip Capacitor
1000 pF Chip Capacitor
1 μF Chip Tantalum Capacitor
18 pF Chip Capacitor
10 pF Chip Capacitor
7 pF Chip Capacitor
8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
1 nH Chip Inductor
1.8 nH Chip Inductor
670 Ω Chip Resistor
6.8 kΩ Chip Resistor
Page 15 of 21
RQA0009SXAQS
Preliminary
Output Power, Drain Current
vs. Input Power
1.6
1.0
ID
20
0.8
15
0.6
10
0.4
VDS = 6 V
f = 520 MHz
IDQ = 180 mA
5
0
5
10
15
20
25
60
15
PAE
40
10
VDS = 6 V
f = 520 MHz
IDQ = 180 mA
5
20
0
30
0
0
30
0
5
10
15
20
25
Input Power Pin (dBm)
Input Power Pin (dBm)
Power Gain, Power Added Efficiency
vs. Frequency
Input Return Loss vs. Frequency
PAE
60
15
PG
10
40
5
20
VDS = 6 V
IDQ = 180 mA
Pin = +25 dBm
0
510
530
550
0
450
470
490
0
Input Return Loss RL (dB)
80
Power Added Efficiency PAE (%)
-5
-10
-15
VDS = 6 V
IDQ = 180 mA
Pin = +25 dBm
-20
450
470
490
510
530
550
Frequency f (MHz)
Frequency f (MHz)
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency
vs. Idling Current
70
20
PAE
60
15
PG
50
10
5
0
3
IDQ = 180 mA
f = 520 MHz
Pin = +25 dBm
4
5
6
7
8
Drain to Source Voltage VDS (V)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
9
40
30
20
Power Gain PG (dB)
Power Gain PG (dB)
80
PG
0.2
20
Power Gain PG (dB)
20
80
15
75
PG
10
5
0
0
70
PAE
VDS = 6 V
f = 520 MHz
Pin = +25 dBm
0.1
0.2
0.3
0.4
65
60
0.5
Power Added Efficiency PAE (%)
25
Power Gain PG (dB)
1.2
30
0
100
1.4
Pout
Drain Current ID (A)
35
25
Power Added Efficiency PAE (%)
Output Power
Pout (dBm)
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Input Power
Idling Current IDQ (A)
Page 16 of 21
RQA0009SXAQS
Preliminary
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
Scale: 5 / div.
90°
1.5
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
-10
-5
-4
-.2
-.4
-30°
-150°
-3
-2
-.6
-.8
-1
-60°
-120°
-1.5
-90°
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.01 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
-10
-5
-4
-.2
-30°
-150°
-3
-.4
-60°
-120°
-90°
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
-2
-.6
-.8
-1
-1.5
Test condition:
VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Page 17 of 21
RQA0009SXAQS
Preliminary
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
Scale: 5 / div.
90°
1.5
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
-10
-5
-4
-.2
-.4
-30°
-150°
-3
-2
-.6
-.8
-1
-60°
-120°
-1.5
-90°
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.01 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
-10
-5
-4
-.2
-30°
-150°
-3
-.4
-60°
-120°
-90°
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
-2
-.6
-.8
-1
-1.5
Test condition:
VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step)
Page 18 of 21
RQA0009SXAQS
Preliminary
S Parameter
(VDS = 6 V, IDQ = 180 mA, Zo = 50 )
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
S11
MAG
ANG (deg.)
S21
MAG
ANG (deg.)
S12
MAG
ANG (deg.)
S22
MAG
ANG (deg.)
0.868
0.861
0.882
0.892
0.899
0.910
0.918
0.926
0.932
0.936
0.940
0.941
0.944
0.945
0.944
0.944
0.943
0.943
0.946
0.949
0.951
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.952
0.953
0.958
0.965
0.963
0.956
0.950
0.944
0.936
0.932
0.932
0.929
0.923
0.917
9.85
5.42
3.64
2.64
2.06
1.61
1.28
1.04
0.84
0.73
0.62
0.54
0.45
0.41
0.37
0.31
0.30
0.26
0.23
0.22
0.21
0.18
0.18
0.16
0.14
0.14
0.13
0.12
0.11
0.11
0.10
0.10
0.09
0.08
0.08
0.08
0.07
0.07
0.07
0.07
0.06
0.06
0.06
0.06
0.05
0.05
0.05
0.05
0.05
0.019
0.018
0.016
0.016
0.014
0.013
0.013
0.011
0.010
0.009
0.008
0.007
0.006
0.006
0.005
0.004
0.004
0.003
0.003
0.003
0.004
0.004
0.004
0.005
0.005
0.006
0.006
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.017
0.017
0.706
0.725
0.755
0.768
0.792
0.805
0.827
0.840
0.855
0.869
0.880
0.892
0.901
0.906
0.915
0.919
0.929
0.930
0.936
0.940
0.943
0.944
0.950
0.951
0.949
0.956
0.958
0.957
0.956
0.959
0.960
0.960
0.962
0.967
0.968
0.965
0.967
0.976
0.972
0.972
0.976
0.981
0.977
0.977
0.978
0.981
0.977
0.977
0.980
-154.0
-159.4
-163.9
-166.8
-169.5
-171.6
-173.4
-175.2
-176.8
-178.2
-179.5
179.2
178.1
176.9
175.9
174.6
173.4
172.3
171.1
170.2
169.4
168.7
167.8
167.0
166.2
165.4
164.6
164.0
163.3
162.1
160.8
159.7
158.5
157.3
156.4
155.7
154.7
153.9
153.6
153.3
152.9
152.2
151.6
150.7
149.3
148.1
147.3
146.3
144.9
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
88.8
77.2
68.2
58.5
51.8
45.1
40.3
36.0
31.8
28.8
26.4
23.1
20.2
18.3
16.4
13.9
12.1
10.6
8.6
7.3
6.5
5.3
4.3
3.7
2.2
1.3
0.8
0.1
-0.8
-1.8
-2.7
-3.6
-4.5
-4.7
-5.0
-4.7
-4.9
-5.2
-4.6
-4.9
-4.2
-3.5
-3.8
-3.5
-3.4
-3.6
-3.0
-3.6
-3.0
1.2
-6.3
-14.1
-19.2
-22.1
-27.2
-29.3
-34.1
-33.1
-34.5
-34.6
-36.5
-32.7
-32.0
-25.3
-22.3
-15.2
0.3
9.1
20.6
36.9
40.3
52.0
53.2
56.8
60.9
64.0
62.2
65.4
65.9
65.6
65.9
66.6
66.2
66.5
66.5
67.0
67.0
65.5
65.4
65.3
65.2
63.9
63.9
63.0
62.8
63.0
61.3
61.8
-166.8
-168.9
-170.6
-170.6
-171.2
-171.5
-172.2
-173.1
-173.8
-174.6
-175.6
-176.5
-177.3
-178.0
-179.4
180.0
178.9
178.1
177.2
176.5
175.5
174.7
174.1
173.3
172.6
171.7
171.0
170.3
169.5
168.5
168.2
167.4
166.4
165.8
165.3
164.5
163.7
163.2
162.9
161.9
161.0
160.7
160.1
159.5
158.9
158.4
158.0
157.2
156.8
Page 19 of 21
RQA0009SXAQS
Preliminary
S Parameter
(VDS = 4.8 V, IDQ = 300 mA, Zo = 50 )
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
S11
MAG
ANG (deg.)
S21
MAG
ANG (deg.)
S12
MAG
ANG (deg.)
S22
MAG
ANG (deg.)
0.772
0.794
0.812
0.818
0.824
0.831
0.836
0.841
0.848
0.851
0.851
0.852
0.854
0.858
0.865
0.873
0.878
0.880
0.882
0.886
0.889
0.893
0.898
0.902
0.901
0.902
0.904
0.907
0.904
0.905
0.912
0.915
0.919
0.926
0.938
0.942
0.942
0.945
0.946
0.942
0.939
0.940
0.942
0.939
0.937
0.937
0.935
0.932
0.931
9.63
5.54
3.91
2.98
2.36
1.92
1.60
1.36
1.15
1.00
0.87
0.77
0.69
0.60
0.54
0.49
0.45
0.41
0.37
0.35
0.32
0.29
0.27
0.26
0.23
0.22
0.21
0.19
0.18
0.17
0.16
0.15
0.14
0.14
0.13
0.13
0.12
0.11
0.11
0.11
0.10
0.10
0.09
0.09
0.08
0.08
0.08
0.07
0.07
0.013
0.013
0.012
0.011
0.011
0.011
0.010
0.009
0.008
0.008
0.007
0.006
0.006
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.005
0.005
0.005
0.006
0.006
0.007
0.007
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.010
0.011
0.011
0.012
0.012
0.012
0.013
0.013
0.014
0.014
0.014
0.014
0.776
0.784
0.799
0.805
0.818
0.824
0.837
0.843
0.859
0.868
0.874
0.887
0.896
0.901
0.905
0.911
0.918
0.922
0.932
0.931
0.935
0.939
0.944
0.943
0.948
0.948
0.954
0.954
0.953
0.958
0.959
0.956
0.958
0.964
0.965
0.963
0.965
0.968
0.965
0.969
0.973
0.974
0.974
0.974
0.976
0.977
0.972
0.975
0.977
-157.0
-162.8
-167.3
-170.4
-173.1
-175.0
-176.6
-178.3
-179.9
179.0
177.7
176.3
174.7
173.3
171.9
170.8
169.8
168.8
167.7
166.5
165.5
164.4
163.3
162.4
161.3
160.0
158.7
157.7
156.5
155.1
153.8
152.8
151.5
149.9
148.8
147.9
146.7
145.5
144.7
143.7
142.3
140.9
139.8
138.3
136.8
135.4
134.1
132.8
131.3
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
88.9
79.0
71.6
64.7
59.1
53.6
48.7
44.8
40.5
37.1
33.9
30.7
27.9
24.8
22.3
20.2
17.9
16.1
14.2
12.4
10.7
8.9
7.5
6.2
4.7
3.3
1.8
0.4
-0.8
-2.4
-3.1
-4.2
-5.8
-6.8
-7.8
-8.6
-9.3
-10.2
-10.6
-11.2
-11.8
-12.5
-13.3
-14.3
-15.3
-16.3
-17.5
-18.1
-18.7
-1.0
-6.3
-11.1
-13.5
-15.2
-20.4
-21.4
-23.3
-22.9
-22.2
-24.8
-24.2
-20.5
-18.2
-15.1
-12.2
-1.7
4.3
11.2
21.6
29.8
33.2
40.9
46.7
50.8
54.5
57.8
55.3
60.5
62.1
61.1
64.3
63.2
62.7
63.0
62.6
61.9
63.8
62.4
62.2
61.2
62.0
61.3
59.2
59.6
59.8
58.9
57.9
57.7
-172.1
-173.8
-174.8
-174.8
-175.0
-175.1
-175.4
-175.8
-176.8
-177.1
-177.4
-177.8
-178.8
-179.1
-179.8
179.5
178.9
178.3
177.8
177.1
176.5
175.8
175.1
174.6
174.1
173.4
173.1
172.5
171.6
171.0
170.7
170.4
169.3
168.9
168.4
167.8
167.0
166.6
166.3
165.5
164.9
164.6
164.2
163.4
163.0
162.9
162.0
161.5
161.2
Page 20 of 21
RQA0009SXAQS
Preliminary
Package Dimensions
1.5 1.5
3.0
MASS[Typ.]
0.050g
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
0.53 Max
0.48 Max
0.8 Min
φ1
0.4
4.5 ± 0.1
1.8 Max
Previous Code
UPAK / UPAKV
Unit: mm
(1.5)
0.44 Max
(0.2)
RENESAS Code
PLZZ0004CA-A
(2.5)
JEITA Package Code
SC-62
(0.4)
Package Name
UPAK
Ordering Information
Orderable Part Number
RQA0009SXTL-E
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
Quantity
1000 pcs.
Shipping Container
178 mm reel, 12 mm emboss taping
Page 21 of 21
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
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6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
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range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
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9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
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please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
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no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
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12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
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2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
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Tel: +1-905-898-5441, Fax: +1-905-898-3220
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Tel: +49-211-65030, Fax: +49-211-6503-1327
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7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
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Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
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Colophon 1.1