SC8252

SC8252
Gre
r
Pro
S a mHop Microelectronics C orp.
Ver 1.1
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V SSS
IS
R SS(ON) (m Ω) Max
Rugged and reliable.
43.0 @ VGS=4.5V
Wafer level CSP.
45.0 @ VGS=4.0V
24V
4.5A
ESD Protected.
54.0 @ VGS=3.1V
66.0 @ VGS=2.5V
BOTTOM VIEW
0.65
1.53 㫧 0.02
TOP VIEW
1.53 㫧 0.02
G2
0.65
G1
1-pin index mark S1
4 - φ 0.28
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C )
Symbol
Limit
Parameter
VSSS
Source-Source Voltage
24
±12
VGSS
Gate-Source Voltage
IS
Source Current-Continuous
PT
TJ, TSTG
-Pulsed
Total Power Dissipation
S1
Mark area
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
0.305 㫧 0.012
0.105 㫧 0.007
ISP
S2
a
b
a
Operating Junction and Storage
Temperature Range
Unit : mm
Units
FET1
FET2
V
Gate 1
Gate 2
4.5
V
A
45
A
1.6
W
Gate
Protect
Diode
Source 1
Source 2
Body Diode
-55 to 150
Details are subject to change without notice.
°C
Nov,02,2011
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SC8252
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Source-Source Breakdown Voltage
BVSSS
Zero Gate Voltage Source Current
ISSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RSS(ON)
Source-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
Conditions
Min
VGS=0V , IS=250uA
24
VSS=24V , VGS=0V
VGS= ±12V , VSS=0V
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
1
V
uA
±10
uA
0.5
1.1
24.0
32.0
VGS=4.0V , IS=2.25A
24.5
33.0
45.0
m ohm
VGS=3.1V , IS=2.25A
VGS=2.5V , IS=2.25A
VSS=5V , IS=2.25A
31.0
33.0
41.0
49.0
16
54.0
66.0
m ohm
m ohm
S
VSS=10V,VGS=0V
f=1.0MHz
Output Capacitance
Rise Time
Units
1.5
V
43.0 m ohm
c
COSS
tr
Max
VSS=VGS , IS=1mA
VGS=4.5V , IS=2.25A
Input Capacitance
tD(OFF)
Typ
363
pF
180
pF
67
pF
215
ns
705
ns
2110
ns
1160
ns
11.3
nC
c
VDD=20V
IS=2.25A
VGS=4.0V
RGEN=6 ohm
VDD=20V,IS=4.5A,
VG1S1=4.0V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VFSS
VGS=0V,IS=1.5A
0.81
1.2
V
Note
a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.6mm.
_ 10us, Duty Cycle <
_ 1%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Nov,02,2011
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SC8252
Ver 1.1
V SSS / I SSS
IGSS (+) / (--)
S2
S2
G2
G2
G1
G1
S1
S1
| y fs |
V GS (off)
S2
S2
G2
G2
10V 1mA
G1
G1
S1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Nov,02,2011
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SC8252
Ver 1.1
R SS (on)
V F(S-S)
S2
S2
4.5V
G2
G2
G1
G1
S1
S1
Qg
td(on), t r, t d(off), t f
V DD =10V
S2
V IN
S2
IS =3A
R L =3.33 W
V OUT
G2
G2
PW=10 μs
D.C. 1%
G1
G1
S1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Nov,02,2011
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SC8252
Ver 1.1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
Mounted on FR-4 board of
1 inch2 , 2oz
2
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100us
t
imi
10
R
)L
(ON
DS
1ms
1
10ms
100ms
0.1
0.01
0.1
VGS=4.5V
Single Pulse
TA=25 C
1
DC
10
VSS - Source to Source Voltage - V
rth - tw
1000
Transient thermal impedance
rth (°C/W)
IS - Source Current - A
100
Mounted on FR-4 board
100
10
Single Pulse
1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (S)
Nov,02,2011
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SC8252
Ver 1.1
FORWARD TRANSFER CHARACTERISTICS
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
100
20
IS - Source Current - A
IS - Source Current - A
25
VGS = 4.5 V
4.0 V
15
3.1 V
2.5 V
10
10
125°C
1
25°C
0.1
5
TA = -25°C
0.01
0
0
0.2
0.4
0.6
0.8
0.4
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
1.3
IS = 1.0mA
1.2
1.1
1.0
0.9
0
50
100
150
RSS(on) - Source to Source On-state Resistance - mΩ
VGS = 2.5 V
3.1 V
4.0 V
40
4.5 V
20
0
0.1
1
10
2.0
2.4
2.6
TA = -25°C
10
25°C
75°C
1
125°C
0.1
0.01
0.01
0.1
1
10
100
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
100
60
1.6
100
Tch - Channel Temperature - °C
80
1.2
FORWARD TRANSFER ADMITTANCE vs.
SOURCE CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0.8
-50
0.8
VGS - Gate to Source Voltage - V
VSS - Source to Source Voltage - V
RSS(on) - Source to Source On-state Resistance - mΩ
75°C
100
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
IS = 2.25 A
60
40
20
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Nov,02,2011
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SC8252
CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
1000
IS = 2.25 A
Ciss, Coss, Crss - Capacitance - pF
RSS(on) - Source to Source On-state Resistance - mΩ
Ver 1.1
VGS = 2.5 V
80
3.1 V
4.0 V
60
4.5 V
40
20
0
0
-50
50
100
Ciss
Coss
100
Crss
10
0.1
150
1
10
100
VSS - Source to Source Voltage - V
Tch - Channel Temperature - °C
DYNAMIC INPUT CHARACTERISTICS
SWITCHING CHARACTERISTICS
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
4
td(off)
tf
tr
1000
td(on)
100
10
0.1
VDD = 10.0 V
VGS = 4.0 V
RG = 6 Ω
VDD = 5 V
3
12 V
20 V
2
1
IS = 4.5 A
0
1
10
0
3
6
9
12
15
QG - Gate Charge -nC
IS - Source Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
VF(S-S) - Source to Source Voltage - V
Nov,02,2011
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