STM4884

Gre
r
Pro
STM4884
SamHop Micrpelectronics Corp.
Ver 3.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON).
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (m ) Typ
Rugged and reliable.
5.5 @VGS=10V
30V
Suface Mount Package.
13A
8.5 @VGS=4.5V
S O-8
1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VDGR
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20 kΩ)
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
a
Limit
30
30
±20
Units
V
V
TA=25°C
13
A
TA=70°C
10.5
A
52
A
45
mJ
b
EAS
Sigle Pulse Avalanche Energy
I AR
Avalanche Current
d
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
V
13
A
TA=25°C
2.5
W
TA=70°C
1.6
W
-55 to 150
°C
50
°C/W
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Mar,02,2011
1
www.samhop.com.tw
STM4884
Ver 3.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
BVDSX
ID=10mA , VGS=0V
ID=10mA , VGS=-20V
IDSS
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
VDS=VGS , ID=1mA
VGS=10V , ID=6.5A
VGS=4.5V , ID=6.5A
VDS=10V , ID=6.5A
Min
Typ
Max
30
10
1.3
Units
V
V
uA
1
±100
nA
1.8
5.5
2.5
7
V
m ohm
8.5
31
11.5
m ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
1200
410
316
pF
pF
pF
VDD=15V
ID=6.5A
VGS=10V
RGEN=4.7 ohm
24
43
62
ns
ns
44
ns
ns
VDS=10V,VGS=0V
f=1.0MHz
c
Qg
Total Gate Charge
VDS=24V,ID=13A,VGS=10V
29
nC
Qgs
Qgd
Gate-Source Charge
VDS=24V,ID=13A,
VGS=10V
2.5
10
nC
nC
Gate-Drain Charge
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
Drain reverse current - Pulse
IDRP
Diode Forward Voltage
VSD
VGS=0V,IS=13A
0.92
52
1.2
A
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=100uH,VDD = 20V.
Mar,02,2011
2
www.samhop.com.tw
STM4884
Ver 3.2
ID - VDS
ID - VDS
20
50
VGS=10V
16
VGS=3.5V
VGS=5V
VGS=3V
Drain Current ID (A)
Drain Current ID (A)
VGS=10V
VGS=5V
VGS=3.5V
12
8
4
40
VGS=4V
30
20
VGS=3V
10
VGS=2.5V
VGS=2.5V
0
0
0
0.4
0.2
0.8
0.6
Drain-Source Voltage VDS
1.0
0
(V)
0.8
0.4
1.6
1.2
Drain-Source Voltage VDS
ID - VGS
2.0
(V)
VDS - VGS
0.5
28
Drain-Source Voltage VDS
Drain Current ID (A)
(V)
35
21
-55 C
14
Tj=100 C
25 C
7
0
2
1
0
4
3
0.4
0.3
0.2
0.1
ID=13A
6.5A
3A
0
0
5
Gate-Source Voltage VGS (V)
ЮYfsЮ - ID
1
10
10
RDS(ON) - ID
10
1
8
100
VDS=10V
0.1
0.1
6
Gate-Source Voltage VGS (V)
Drain-source ON resistance
RDS(ON) (mΩ)
Forward transfer admittance
!!!!!!ЮYfsЮ (S)
100
4
2
VGS=10V
1
0.1
0.1
100
Drain Current ID (A)
VGS=4.5V
10
1
10
100
Drain Current ID (A)
Mar,02,2011
3
www.samhop.com.tw
STM4884
Ver 3.2
RDS(on)
Ta
IDR
Drain reverse current IDR (A)
ID = 3, 6.5, 13A
12
9
VGS=4.5V
6
ID = 3, 6.5, 13A
VGS=10V
3
0
-40
40
0
80
4.5
1
0
-0.3
-0.6
-0.9
-1.2
-1.5
Drain-source voltage VDS (V)
Vth
VDS
Ta
2.5
Gate threshold voltage Vth (V)
10000
Capacitance C (pF)
VGS=0V
1
10
Ambient temperature Ta (°C )
Capacitance
3
10
0.1
160
120
100
Ciss
1000
Coss
Crss
100
0.1
1
1.5
1.0
0.5
0
-80
100
10
VDS=VGS
ID=1mA
2.0
40
0
80
160
120
Ambient temperature Ta (°C )
Drain-source voltage VDS (V)
PD
-40
Dynamic input/output characteristics
Ta
3.0
Drain-source voltage VDS (V)
50
2.4
1.8
1.2
0.6
0
40
40
80
120
160
Ambient temperature Ta (°C )
12
30
12
VDD=24V
9
6
20
6
VDD=24V
12
10
0
0
15
ID=13A
3
6
0
4
8
12
16 20
24
28 32
Gate-source voltage VGS (V)
-80
Drain power dissipation PD (W)
VDS
1000
15
RDS(on) (m Ω)
Drain-source ON resistance
18
0
Total gate charge Qg (nC)
Mar,02,2011
4
www.samhop.com.tw
STM4884
Ver 3.2
rth - tw
Transient thermal impedance
rth (°C/W)
1000
100
Mounted on FR-4 board
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (S)
Safe operating area
100
it
Drain current ID (A)
N)
R
DS
Lim
t=1
(O
t=1
10
t=1
t=1
1
0.1
0.01
0.1
DC
00m
00u
s
ms
s
0s
VGS=10V
Single Pulse
TA=25 C
1
10
30
Drain-source voltage VDS (V)
Mar,02,2011
5
www.samhop.com.tw
STM4884
Ver 3.2
PACKAGE OUTLINE DIMENSIONS
SO-8
D
E
A2 A
1
e
A1
b
H
h X 45
O
C
L
SYMBOLS
A
A1
A2
b
C
D
E
e
H
L
h
MILLIMETERS
MIN
MAX
1.75
1.35
0.25
0.10
1.63
1.25
0.51
0.31
0.17
0.25
4.80
5.00
3.70
4.00
1.27 REF.
5.80
6.20
1.27
0.40
0±
8±
0.25
0.50
MIN
INCHES
MAX
0.053
0.069
0.010
0.004
0.064
0.049
0.020
0.012
0.010
0.007
0.197
0.189
0.146
0.157
0.050 BSC
0.228
0.244
0.016
0.050
8±
0±
0.020
0.010
Mar,02,2011
6
www.samhop.com.tw
STM4884
Ver 3.2
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
SOP 8N
150п
A0
6.50
²0.15
B0
5.25
²0.10
K0
D0
D1
E
2.10
²0.10
ӿ1.5
(MIN)
ӿ1.55
²0.10
12.0
+0.3
- 0.1
M
N
W
W1
E2
P0
P1
P2
T
1.75
²0.10
5.5
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.10
0.30
²0.013
H
K
S
G
R
E1
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
REEL SIZE
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
ӿ12.75
+ 0.15
V
2.0
²0.15
Mar,02,2011
7
www.samhop.com.tw