STT600

STT600
Green
Product
S a mHop Microelectronics C orp.
Ver 3.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
600 @ VGS=10V
90V
Surface Mount Package.
1.4A
708 @ VGS=4.5V
D
D
G
G
D
S
STT SERIES
SO T - 223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
90
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
1.4
A
1.12
A
IDM
EAS
-Pulsed
TA=25°C
TA=70°C
ae
b
Single Pulse Avalanche Energy
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
TA=25°C
TA=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
9.3
A
0.49
mJ
3
W
1.9
W
-55 to 150
°C
42
°C/W
Apr,16,2013
1
www.samhop.com.tw
STT600
Ver 3.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=72V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=0.7A
VGS=4.5V , ID=0.65A
Min
Typ
Max
90
1
Units
V
1
uA
±10
uA
1.7
3
480
600
V
m ohm
525
708
m ohm
VDS=10V , ID=0.7A
2.5
S
VDS=25V,VGS=0V
f=1.0MHz
170
22
13
pF
pF
pF
14.5
ns
11.5
ns
172
ns
26
ns
VDS=45V,ID=0.7A,VGS=10V
3.2
nC
VDS=45V,ID=0.7A,VGS=4.5V
1.8
nC
VDS=45V,ID=0.7A,
VGS=10V
0.65
nC
0.9
nC
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=45V
ID=0.7A
VGS=10V
RGEN= 6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=0.7A
0.87
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Apr,16,2013
2
www.samhop.com.tw
STT600
Ver 3.0
3.5
4.0
3.2
ID, Drain Current(A)
ID, Drain Current(A)
V G S =10V
V G S =4V
V G S =4.5V
2.4
V G S =3.5V
1.6
V G S =3V
0.8
2.8
Tj=125 C
2.1
-55 C
1.4
25 C
0.7
V G S =2.5V
0
0
0.5
1.5
1.0
2.0
2.5
3.0
0
1.6
2.4
3.2
4.8
4.0
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1200
2.0
1000
1.8
800
V G S =4.5V
600
V G S =10V
400
200
0
0.1
0.8
1.6
2.4
3.2
V G S =10V
I D =0.7A
1.6
1.4
V G S =4.5V
I D =0.65A
1.2
1.0
0
4
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
0.8
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
0
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Apr,16,2013
3
www.samhop.com.tw
STT600
Ver 3.0
1200
20
Is, Source-drain current(A)
I D =0.7A
RDS(on)(m Ω)
1000
800
125 C
600
75 C
400
25 C
200
0
0
2
4
6
8
25 C
1
0.6
0
1.2
1.8
3.0
2.4
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
10
200
C, Capacitance(pF)
75 C
10
240
Ciss
160
120
80
40
Coss
Crss
0
125 C
10
0
5
10
15
20
25
V DS = 45V
I D = 0.7A
8
6
4
2
0
30
0
0.4
1.2
0.8
1.6
2.0
2.4
2.8
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
3.2
100
L im
N)
(O
S
RD
I D, Drain Current(A)
DC
Switching Time(ns)
ms
s
s
0.1
V DS =45V,I D =0.7A
V GS =10V
10
1
0m
10
TD(on)
Tr
10
10
1s
Tf
it
10
TD(off)
VGS=10V
Single Pulse
TA=25 C
1
1
10
0.1
100
1
10
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Apr,16,2013
4
www.samhop.com.tw
STT600
Ver 3.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
1
Normalized Transient
Thermal Resistance
0.5
0.2
0.1
0.1
0.05
P DM
0.02
0.01
0.01
t1
t2
Single Pulse
1. RthJA (t)=r (t) * R th JA
2. R thJA=See Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
0.001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
10
100
1000
Figure 14. Normalized Thermal Transient Impedance Curve
Apr,16,2013
5
www.samhop.com.tw
STT600
Ver 3.0
SOT-223
D
B
0.10 M C B
C
C
C
0.080
C1
A
E
E1
(C)
b1
0.10 M C B
b
SECTION B-B
g
1
B
DETAIL "A"
3
2
B
e
C1
b
0.10 M C B
b3
C
e1
(C)
b2
SECTION C-C
GAUGE PLANE
A2
SEATING PLANE
L
0.25
DETAIL "A"
A
C
A1
COMMON
SYMBOL
A
A1
A2
b
b1
b2
b3
g
c
c1
D
E
E1
e
e1
L
DIMENSIONS MILLIMETER
MIN.
MOM.
MIN.
1.80
0.02
0.10
1.60
1.50
1.70
0.84
0.76
0.66
0.60
0.71
0.79
3.10
2.90
3.00
3.05
2.95
2.84
0.06
0.35
0.23
0.30
0.23
0.28
0.33
6.50
6.70
6.30
6.70
7.30
7.00
3.50
3.30
3.70
2.30 BSC
4.60 BSC
0.81
10 °
0°
DIMENSIONS INCHE
MIN.
MOM.
0.0008
0.0591
0.0260
0.0236
0.1142
0.1118
0.0630
0.0300
0.0280
0.1181
0.1161
0.0090
0.0090
0.2480
0.2638
0.1300
0.0319
0°
0.1181
0.0110
0.2560
0.2760
0.1378
0.0906 BSC
0.1811 BSC
MAX.
0.0709
0.0039
0.0669
0.0330
0.0311
0.1220
0.1200
0.0020
0.1378
0.0130
0.2638
0.2874
0.1457
10 °
Apr,16,2013
6
www.samhop.com.tw
STT600
Ver 3.0
SOT-223 Tape and Reel Data
SOT-223 Carrier Tape
D1
P0
P2
P1
E1
E2
E
D0
T
K0
B0
A0
unit:р
PACKAGE
A0
B0
K0
7.42
²0.1
6.83
²0.1
1.88
²0.1
D0
1.50
+ 0.25
D1
1.60
+ 0.1
E
12.0
+ 0.3
- 0.1
E1
E2
P0
P1
P2
T
1.75
²0.1
5.50
²0.5
8.0
²0.1
4.00
²0.1
2.00
²0.05
0.292
²0.02
SOT-223 Reel
UNIT:р
REEL SIZE
ӿ330
² 0.5
M
N
ӿ97.0
² 1.0
W
2.2
W1
H
K
S
13.0
+ 1.5
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
G
R
V
Apr,16,2013
7
www.samhop.com.tw