STF2458

Green
Product
STF2458
S a mHop Microelectronics C orp.
Ver 1.1
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
9.5 @ VGS=4.5V
10A
24V
10.2 @ VGS=4.0V
Suface Mount Package.
10.4 @ VGS=3.7V
ESD Protected.
11.5 @ VGS=3.1V
14.0 @ VGS=2.5V
G2
Bottom Drain Contact
S2
S2
G1
3
4 G2
S1
2
5
S2
S1
1
6
S2
D1/D2
G1
S1
T DF N 2X3
S1
(Bottom view)
P IN 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
10.0
Units
V
V
A
8.0
A
60
A
TA=25°C
1.56
W
TA=70°C
1.00
W
-55 to 150
°C
80
°C/W
Limit
24
±12
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Sep,24,2013
1
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STF2458
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VGS=0V , ID=250uA
Min
Typ
Max
24
1
±10
VDS=20V , VGS=0V
VGS= ±12V , VDS=0V
Units
V
uA
uA
0.85
1.5
6.0
7.5
9.5
V
m ohm
6.2
7.7
10.2
m ohm
7.9
10.4
m ohm
11.5 m ohm
14.0 m ohm
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=5.0A
0.5
VGS=4.0V , ID=5.0A
VGS=3.7V , ID=5.0A
6.4
VGS=3.1V , ID=5.0A
7.0
8.6
VGS=2.5V , ID=5.0A
VDS=5V , ID=5.0A
8.0
10.4
24
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=10V,VGS=0V
f=1.0MHz
1300
241
217
pF
pF
pF
29
ns
85
ns
66
ns
35
ns
c
VDD=20V
ID=5.0A
VGS=4.5V
RGEN=6 ohm
Total Gate Charge
VDS=20V,ID=10.0A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=10A
14
nC
2.7
nC
7.0
nC
0.83
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Sep,24,2013
2
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STF2458
Ver 1.1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
Mounted on FR-4 board of
1 inch2 , 2oz
2
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS
(ON
10us
100us
1
1ms
10ms
100ms
0.1
VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1
DC
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
t
imi
)L
10
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Sep,24,2013
3
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STF2458
Ver 1.1
FORWARD TRANSFER CHARACTERISTICS
60
100
4.0 V
VGS = 4.5 V
3.7 V
ID - Drain Current - A
ID - Drain Current - A
50
40
3.1 V
30
2.5 V
20
10
TA = -25°C
25°C
1
75°C
125°C
0.1
10
0.01
0
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
ID = 1.0mA
0.9
0.8
0.7
0.6
0
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 2.5 V
3.1 V
3.7 V
10
4.5 V
5
0
0.1
1
10
3
TA = -25°C
10
25°C
75°C
1
125°C
0.1
0.01
0.1
0.01
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
4.0 V
2.5
100
Tch - Channel Temperature - °C
15
2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-50
1.5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
1.0
1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
ID = 5.0 A
15
10
5
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Sep,24,2013
4
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STF2458
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
24
Ciss, Coss, Crss - Capacitance - pF
ID = 5.0 A
20
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
16
12
8
4
0
0
-50
50
100
Ciss
1000
Coss
Crss
100
10
0.1
150
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
100
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 1.1
tr
td(off)
tf
td(on)
10
VDD = 20.0 V
VGS = 4.5 V
RG = 6 Ω
1
0.1
4
2
1
ID = 10 A
0
1
10
ID - Drain Current - A
VDD = 5 V
12 V
20 V
3
0
4
8
12
16
QG - Gate Charge -nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
Sep,24,2013
5
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STF2458
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
TDFN
L
E
6
D
TDFN
( 2 x 3 ) - 6L
e
1
H
PIN #1 DOT
BY MARKING
F
C
BOTTOM VIEW
TOP VIEW
PIN #1 ID
CHAMFER 0.300mm
A
B
A1
SYMBOLS
A
A1
D
E
H
L
e
B
C
F
SIDE VIEW
MILLIMETERS
MIN
MAX
0.800
0.700
0.000
0.050
2.950
3.050
1.950
2.050
0.350
0.450
1.550
1.450
1.650
1.750
0.195
0.211
0.200
0.300
0.500 BSC
INCHES
MIN
MAX
0.028
0.031
0.000
0.002
0.120
0.116
0.081
0.077
0.018
0.014
0.061
0.057
0.069
0.065
0.008
0.0076
0.008
0.012
0.020 BSC
Sep,24,2013
6
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STF2458
Ver 1.1
TOP MARKING DEFINITION
TDFN 2x3-6L
Pin 1
2458
Product No.
XXXXXX
SMC Internal Code No.(A,B...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
Sep,24,2013
7
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