STM8324 Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS ID 30V 6.5A PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID -30V -6A R DS(ON) (m Ω) Max 31 @ VGS=10V 35 @ VGS=-10V 42 @ VGS=4.5V 53 @ VGS=-4.5V S O-8 1 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed TA=25°C TA=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d N-Channel 30 P-Channel -30 Units V ±20 ±20 V 6.5 -6 5.2 -4.8 A A 24 -22 A 12 64 mJ TA=25°C 2 TA=70°C 1.28 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. W -55 to 150 °C 62.5 °C/W Feb,04,2009 1 www.samhop.com.tw STM8324 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Conditions Min VGS=0V , ID=250uA 30 VGS= ±20V , VDS=0V Drain-Source On-State Resistance gFS Forward Transconductance 1 Max Units 1 ±10 uA uA V m ohm m ohm V VDS=24V , VGS=0V VDS=VGS , ID=250uA RDS(ON) Typ VGS=10V , ID=6.5A 24 3 31 VGS=4.5V , ID=5.3A 33 42 VDS=5V , ID=6.5A 17 S VDS=15V,VGS=0V f=1.0MHz 505 100 60 pF pF pF 12.5 ns 10 16.5 ns 1.9 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Turn-Off Delay Time c VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=6.5A,VGS=10V VDS=15V,ID=6.5A,VGS=4.5V VDS=15V,ID=6.5A, VGS=10V Gate-Drain Charge ns ns 13 8.8 4.3 1.7 2.2 nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage b VGS=0V,IS=1.7A 0.81 1.7 A 1.2 V Feb,04,2009 2 www.samhop.com.tw STM8324 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -30 Typ VGS= ±20V , VDS=0V VGS=-4.5V , ID=-4.9A VDS=-5V , ID=-6A -1.0 Units -1 ±10 uA V VDS=-24V , VGS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-6A Max uA -1.8 -3.0 27 35 V m ohm 40 12 53 m ohm S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge 825 220 130 pF pF pF 13.5 16.5 64 17 ns ns ns ns VDS=-15V,ID=-6A,VGS=-10V 16 nC VDS=-15V,ID=-6A,VGS=-4.5V 8 1.7 4.5 nC nC VDS=-15V,VGS=0V f=1.0MHz c VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm VDS=-15V,ID=-6A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-1.7A -0.77 nC -1.7 A -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,VDD = 20V,VGS=10V,L=0.5mH.(See Figure13) Feb,04,2009 3 www.samhop.com.tw STM8324 Ver 1.0 N-Channel 15 20 V G S =10V I D, Drain Current(A) I D, Drain Current(A) V G S =5V 16 V G S =4.5V V G S =4V 12 8 V G S =3.5V 12 9 T j=125 C -55 C 6 25 C 3 4 V G S =3V 0 0 0.5 2.0 1.5 1.0 2.5 3.0 0 1.6 2.4 3.2 4.0 4.8 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 66 1.60 55 1.48 44 V G S =4.5V 33 22 V G S =10V 11 1 1 8 4 12 16 1.36 V G S =10V I D =6.5A 1.24 1.12 V G S =4.5V I D =5.3A 1.00 0 20 0 50 25 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 0.8 VDS, Drain-to-Source Voltage(V) R DS(on), On-Resistance Normalized RDS(on)(m Ω) 0 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Feb,04,2009 4 www.samhop.com.tw STM8324 Ver 1.0 20.0 90 Is, Source-drain current(A) I D =6.5A 75 RDS(on)(m Ω) 60 45 125 C 30 75 C 25 C 15 0 0 2 4 6 0 0.3 0.6 0.9 1.2 1.5 Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) C, Capacitance(pF) 75 C V SD, Body Diode Forward Voltage(V) 750 600 C is s 450 300 C os s 150 C rs s 10 V DS =15V I D =6.5A 8 6 4 2 0 0 5 10 15 20 25 0 30 2 6 4 8 10 12 14 16 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 I D, Drain Current(A) 1000 Switching Time(ns) 25 C 125 C V GS, Gate-to-Source Voltage(V) 900 0 5.0 1.0 10 8 10.0 100 TD(off ) TD(on) Tf 10 Tr VDS=15V,ID=1A VGS=10V 1 1 6 10 RD im it 10 1m 1 0.05 0.1 60 100 )L 10 0.1 10 ON S( DC 0u s s 10 ms 0m s V G S =10V S ingle P ulse T A =25 C 1 10 30 100 VDS, Drain-Source Voltage(V) Rg, Gate Resistance(Ω) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Feb,04,2009 5 www.samhop.com.tw STM8324 Ver 1.0 V(B R )DS S 15V tp DR IV E R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Feb,04,2009 6 www.samhop.com.tw STM8324 Ver 1.0 P-Channel 20 15 VGS=-10V -ID, Drain Current(A) 16 -I D, Drain Current(A) VGS=-4V VGS=-5V VGS=-4.5V 12 VGS=-3.5V 8 VGS=-3V 4 12 9 -55 C 6 125 C 3 0 0 0 0.5 1 1.5 2 2.5 0 3 -V DS, Drain-to-Source Voltage(V) 75 1.4 R DS(on), On-Resistance Normalized R DS(on)(m Ω) 1.5 60 VGS=-4.5V 30 VGS=-10V 15 4 8 12 16 2.7 3.6 4.5 5.4 VGS=-4.5V ID=-4.9A 1.3 1.2 1.1 VGS=-10V ID=-6A 1.0 0.8 1 1.8 Figure 2. Transfer Characteristics 90 45 0.9 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 25 C 20 0 50 25 75 100 125 150 T j ( °C ) -I D, Drain Current(A) Tj, Junction Temperature( ° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature -BVDSS, Normalized Drain-Source Breakdown Voltage -Vth, Normalized Gate-Source Threshold Voltage 1.2 VDS=VGS ID=-250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.3 1.2 ID=-250uA 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Feb,04,2009 7 www.samhop.com.tw STM8324 Ver 1.0 100 20.0 -Is, Source-drain current(A) I D =-6A R DS(on)(m Ω) 90 80 60 125 C 40 75 C 20 0 0 4 2 25 C 5.0 75 C 0 -VGS, Gate-to-Source Voltage(V) 0.6 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -VGS, Gate to Source Voltage(V) 1200 1000 C, Capacitance(pF) 0.3 -V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Ciss 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 V DS =-15 V I D =-6A 8 6 4 2 0 30 0 2 4 -V DS, Drain-to-Source Voltage(V) 8 6 10 12 14 16 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 100 -ID, Drain Current(A) 1000 Switching Time(ns) 25 C 125 C 1.0 10 8 6 10.0 TD(off ) Tf Tr TD(on) 10 VDS=-15V,ID=-1A VGS=-10V 1 1 6 10 RD 0.1 60 100 Rg, Gate Resistance(Ω) ( L im it 10 0u s 1m 1 0.1 10 S ) ON DC 10 s 10 ms 0m s V G S =-10V S ingle P ulse T c=25 C 1 10 100 -V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Feb,04,2009 8 www.samhop.com.tw STM8324 Ver 1.0 V(B R )DS S 15V tp DR IV E R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. Normalized Transient Thermal Resistance 10 0.5 1 0.2 0.1 P DM 0.05 0.1 t1 t2 0.02 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Feb,04,2009 9 www.samhop.com.tw STM8324 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± Feb,04,2009 10 www.samhop.com.tw STM8324 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 5.25 ²0.10 K0 D0 2.10 ²0.10 ӿ1.5 (MIN) D1 E ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 5.5 ²0.10 8.0 ²0.10 P1 4.0 ²0.10 P2 T 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 12 р REEL SIZE M N W W1 ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 H ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Feb,04,2009 11 www.samhop.com.tw