SP8E2A

Gre
r
Pro
SP8E2A
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
19.0 @ VGS=4.5V
Suface Mount Package.
20.0 @ VGS=4.0V
20V
7A
ESD HBM > 2KV.
21.0 @ VGS=3.7V
24.0 @ VGS=3.1V
30.0 @ VGS=2.5V
P in 1
PPAK 3 x 3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
PD
TJ, TSTG
-Pulsed
TA=25°C
TA=70°C
a
b
Maximum Power Dissipation
a
TA=25°C
TA=70°C
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Limit
20
±12
Units
V
V
7.0
A
5.6
A
42
A
1.56
W
1.00
W
-55 to 150
°C
85
°C/W
Nov,04,2011
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SP8E2A
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
20
Typ
1
±10
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
VDS=VGS , ID=1mA
VGS=4.5V , ID=3.5A
VGS=4.0V , ID=3.5A
VGS=3.7V , ID=3.5A
0.5
13
13.5
14
VGS=3.1V , ID=3.5A
VGS=2.5V , ID=3.5A
15
VDS=5V , ID=3.5A
Max
17.5
0.75
1.5
15
16
19
20
17
18
22
20
21
24
30
Units
V
uA
uA
V
m ohm
m ohm
m ohm
m ohm
m ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
VDS=10V,VGS=0V
f=1.0MHz
Gate-Source Charge
Qgd
Gate-Drain Charge
pF
pF
pF
55
293
ns
ns
793
ns
c
VDD=16V
ID=3.5A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
Qgs
298
148
72
VDS=16V,ID=7A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=1.0A
672
ns
9.4
nC
1.4
nC
4.9
nC
0.78
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Nov,04,2011
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SP8E2A
Ver 1.0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
2
Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
R
10
(ON
DS
)L
imi
t
10us
100us
1ms
1
10ms
0.1
1s
DC
VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Nov,04,2011
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SP8E2A
Ver 1.0
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
30
3.7 V
VGS = 4.5 V
ID - Drain Current - A
ID - Drain Current - A
4.0 V
3.1 V
20
2.5 V
10
10
125°C
1
TA = -25°C
25°C
0.1
75°C
0.01
0
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
1.0
ID = 1.0mA
0.9
0.8
0.7
0.6
0.5
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
20
10
0
1
10
3
TA = -25°C
10
25°C
1
75°C
125°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
0.1
2.5
100
Tch - Channel Temperature - °C
30
2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
1.5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
0.4
-50
1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 3.5 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Nov,04,2011
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SP8E2A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
Ciss, Coss, Crss - Capacitance - pF
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
1000
ID = 3.5 A
20
10
0
-50
0
50
100
Coss
Ciss
100
Crss
10
0.1
150
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
1000
td(off)
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 1.0
tf
tr
100
td(on)
4
VDD = 4.0 V
10 V
16 V
3
2
1
ID = 7 A
10
0
0.1
1
10
0
2
4
6
8
10
QG - Gate Charge -nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
Nov,04,2011
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SP8E2A
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
PPAK 3 x 3
D
D1
7
6
5
3
4
6
5
7
8
0.78
E
M
0.10
E2
n
8
EXPOSED DIE
ATTACHED PAD
D2
j
k
b1
0.80
0.50
1
2
e
4
3
2
1
Z
b
BOTTOM VIEW
TOP VIEW
E1
A
0.06 +00.025
P
SYMBOLS
A
A1
b
b1
D
D1
D2
E
E1
E2
e
j
k
n
M
P
Z
A1
SIDE VIEW
MILLIMETERS
MIN
MAX
0.900
0.800
0.150
0.250
0.140
0.260
0.100
0.170
3.100
3.400
3.200
3.000
2.290
2.690
3.000
3.400
2.800
3.100
1.760
1.860
0.600
0.700
0.340
0.440
0.770
0.870
0.230
0.330
0.200 BSC
9o
11o
0.580 BSC
Nov,04,2011
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