DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA Transistors Digital transistors (built in resistor) DTC115TH / DTC115TUA / DT115TKA / DTC115TSA !External dimensions (Units : mm) DTC115TH 1.6 0.7 0.12 1.0 (2) (3) 1.6 (1) 0.5 0.5 0.27 0.85 (1) Emitter (2) Base (3) Collector 0to0.1 ROHM : EMT3H EIAJ : SC-89 2.0 (1) 1.3 (2) 0.65 0.65 0.9 (3) 0.7 DTC115TUA 0.3 !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. 1.25 2.1 C B 0.1to0.4 R1 E ROHM : UMT3 EIAJ : SC-70 0to0.1 0.15 0.2 !Equivalent circuit Each lead has same dimensions E : Emitter C : Collector B : Base 0.95 0.95 (2) (3) 0.4 (1) DTC115TKA (1) Emitter (2) Base (3) Collector 1.6 0to0.1 0.8 0.15 2.8 0.3to0.6 ROHM : SMT3 EIAJ : SC-59 Each lead has same dimensions DTC115TSA 2 (15Min.) 3Min. 3 4 (1) Emitter (2) Base (3) Collector 0.45 2.5 0.5 0.45 5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 Taping specifications (1) Emitter (2) Collector (3) Base DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Symbol Limits Unit VCBO VCEO 50 50 V V VEBO IC 5 100 V mA Pc 150 200 mW Tj 300 150 ˚C Tstg −55~+150 ˚C Emitter-base voltage Collector current DTC115TH Collector power DTC115TUA / DTC115TKA dissipation DTC115TSA Junction temperature Storage temperature !Packaging, marking, and packaging specifications Part No. DTC115TH DTC115TUA DTC115TKA DTC115TSA Package Marking EMT3H 09 UMT3 09 SMT3 09 SPT - T2L 8000 T106 3000 T146 3000 TP 5000 Packaging code Basic ordering unit (pieces) !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 50 50 - Emitter-base breakdown voltage Collector cutoff current BVEBO V V V ICBO 5 - - 0.5 µA IEBO - - 0.5 VCE(sat) 0.3 µA V DC current transfer ratio hFE 100 250 600 - Input resistance R1 70 Transition frequency fT - 100 250 130 - MHz Emitter cutoff current Collector-emitter saturation voltage ∗ Transition frequency of the device. kΩ Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=1mA/0.1mA IC=1mA, VCE=5V VCE=10V, IE=−5mA, f=100MHz ∗