STM4435

S T M4435
Green
Product
S amHop Microelectronics C orp.
J AN.20 2006
P -C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m Ω ) Max
R ugged and reliable.
20 @ V G S = -10V
-30V
S urface Mount P ackage.
-8A
33 @ V G S = -4.5V
D
D
D
D
8
7
6
5
S O-8
1
1
2
3
4
S
S
S
G
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
P arameter
Limit
Unit
Drain-S ource Voltage
V DS
30
V
Gate-S ource Voltage
V GS
25
V
Drain C urrent-C ontinuous a @ Tj=25 C
b
-P ulsed
ID
8
A
IDM
40
A
Drain-S ource Diode Forward C urrent a
IS
1.7
A
Maximum P ower Dissipation a
PD
2.5
W
Operating Junction and S torage
Temperature R ange
T J , T S TG
-55 to 150
C
R JA
50
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T M4435
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -24V, V GS = 0V
-1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
-1.8
-3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS = -10V, ID = -8.0A
16.5
20 m-ohm
V GS = -4.5V, ID = -5.0A
26
33 m-ohm
-30
V
ON CHAR ACTE R IS TICS b
V DS = -5V, V GS = -10V
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
-1
A
-20
18
S
1470
PF
375
PF
250
PF
22
ns
40
ns
100
ns
50
ns
V DS =-15V, ID=-8A,V GS =-10V
30
nC
V DS =-15V, ID=-8A,V GS =-4.5V
15
nC
V DS =-15V, ID = -8A,
V GS =-10V
3.4
nC
9.2
nC
V DS = -15V, ID = - 8.0A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =-15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
V D = -15V,
ID = -1A,
V GE N = - 10V,
R GE N = 6 -ohm
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
2
S T M4435
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
V GS = 0V, Is =-1.7A
VSD
-0.75 -1.2
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
20
30
-V G S =4V
15
-V G S =4.5V
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
25
20
-V G S =10V
15
10
-V G S =3V
5
10
125 C
5
25 C
1
-55 C
-V G S =2.5V
0
0
0
0.5
1.5
1.0
2.0
2.5
0
3.0
1.8
2.4
3.0
3.6
F igure 2. Trans fer C haracteris tics
F igure 1. Output C haracteris tics
50
2.0
R DS (ON) , On-R es is tance
Normalized
R DS (on) (m Ω)
1.2
-V G S , G ate-to-S ource Voltage (V )
-V DS , Drain-to-S ource Voltage (V )
40
V G S =-4.5V
30
20
V G S =-10V
10
0
0.6
1.8
1.6
V G S =-10V
I D =-8A
1.4
1.2
V G S =-4.5V
I D =-5A
1.0
0
6
12
18
24
30
0
-I D , Drain C urrent (A)
25
50
75
100
125
150
T j( C )
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.2
V DS =V G S
I D =-250uA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
1.3
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
60
I D =-8A
-Is , S ource-drain current (A)
50
125 C
R DS (on) (m Ω)
5
V th, Normalized
G ate-S ource T hres hold V oltage
S T M4435
40
75 C
30
25 C
20
10
0
10.0
125 C
25 C
75 C
1.0
0
2
4
6
8
0
10
-V G S , G ate- S ource Voltage (V )
0.2
0.4
0.6
0.8
1.0
-V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T M4435
-V G S , G ate to S ource V oltage (V )
2000
C i ss
1200
800
C oss
400
C rss
0
5
0
10
15
20
25
V DS =-15 V
I D =-8A
8
6
4
2
0
30
4
0
-V DS , Drain-to S ource Voltage (V )
8
12
16
20
24
28
32
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
50
100
60
-I D , Drain C urrent (A)
600
S witching T ime (ns )
6
C , C apacitance (pF )
1600
10
T D(off)
Tf
Tr
T D (o n)
10
V D S = -15V,I D=-1A
1
10
RD
6 10
60 100 300 600
R g, G ate R es is tance ( Ω)
)L
im
it
10
10
0m
ms
s
1s
DC
1
0.1
V G S = -10 V
1
ON
S(
0.03
V G S =-10V
S ingle P ulse
T A =25 C
0.1
1
10
30 50
-V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
5
F igure 12. Maximum S afe
O perating Area
S T M4435
-V DD
ton
V IN
D
td(off)
V OUT
V OUT
5
tf
90%
90%
VG S
R GE N
toff
tr
td(on)
RL
10%
10%
G
90%
S
V IN
50%
50%
10%
INVE R TE D
P ULS E WIDTH
F igure 14. S witching Waveforms
F igure 13. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
Duty C ycle=0.5
0.2
P DM
0.1
0.1
t1
0.05
t2
1.
2.
3.
4.
0.02
S ingle P uls e
0.01
10
-4
10
-3
10
-2
10
-1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 15. Normalized T hermal T rans ient Impedance C urve
6
10
100
S T M4435
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45±
e
B
0.05 TYP.
A1
0.008
TYP.
0.016 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
H
L
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
7
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
S T M4435
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
6.40
B0
5.20
K0
D0
D1
2.10
ӿ1.5
(MIN)
ӿ1.5
+ 0.1
- 0.0
M
N
W
E1
E2
12.0
²0.3
1.75
5.5
²0.05
W1
H
K
E
P0
P1
P2
T
8.0
4.0
2.0
²0.05
0.3
²0.05
S
G
R
V
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
REEL SIZE
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
8
ӿ12.75
+ 0.15
2.0
²0.15