SDP10N60 SDF10N60 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 10A 0.62 @ VGS=10V Rugged and reliable. TO-220 and TO-220F Package. D SDF SERIES TO-220F SDP SERIES TO-220 ORDERING INFORMATION Ordering Code Package SDP10N60HZ G G D S G D S Marking Code SDP10N60 TO-220 SDP10N60PZ TO-220 SDF10N60HZ TO-220F SDF10N60PZ TO-220F S RoHS Status Halogen Free Delivery Mode Tube 10N60 Tube Pb Free SDF10N60 Tube Halogen Free 10N60 Tube Pb Free ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed SDP10N60 SDF10N60 600 ±30 ±30 TC=25°C TC=100°C a a E AS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range Units V V 10 10 A 6 6 A 40 c 40 A mJ 709 TC=25°C 162 52 W TC=100°C 65 21 W -55 to 150 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 0.77 62.5 Details are subject to change without notice. 2.4 62.5 °C °C/W °C/W Dec,24,2013 1 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance Conditions Min VGS=0V , ID=250uA 600 Typ Units 1 ±100 uA V VDS=480V , VGS=0V VGS= ±30V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=5.0A Max 2 0.62 4 0.75 nA V ohm b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) VDS=25V,VGS=0V f=1.0MHz 1650 165 18 pF pF pF 25 ns 70 ns 140 ns 80 ns b Turn-On Delay Time VDD=300V ID=1A RGEN= 25 ohm tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VDS=480V,ID=1A,VGS=10V 48 nC Qgs Gate-Source Charge nC Gate-Drain Charge VDS=480V,ID=1A, VGS=10V 7.0 Qgd 18 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=10A 1.4 V Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=13mH,VDD = 50V. Dec,24,2013 2 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Dec,24,2013 3 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 Tj, Junction Temperature( ° C ) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for TO220 Figure 9-2. Maximum Safe Operating Area for TO220F Figure 10. Maximum Drain Current vs Case Temperature Dec,24,2013 4 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 Figure 11-1. Transient Thermal Response Curve for TO220 Figure 11-2. Transient Thermal Response Curve for TO220F Dec,24,2013 5 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 Dec,24,2013 6 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 TO-220F A1 E Q1 P A3 Q D1 D L2 L1 b1x3 L bx3 c e SYMBOL A A1 A2 A3 b b1 c D D1 E E1 e L L1 L2 Q Q1 P E1 A A2 MILLIMETERS MAX MIN 4.90 4.50 2.35 2.75 2.15 2.92 0.50 0.65 0.90 0.70 1.55 1.15 0.70 0.45 16.30 15.30 6.67 6.77 9.90 10.32 9.20 9.40 2.54 REF. 9.45 10.05 2.79 3.60 15.60 16.00 3.40 3.20 7.10 6.90 3.55 2.90 Dec,24,2013 7 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 TO-220 Tube Dec,24,2013 8 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 F Tube Dec,24,2013 9 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 TOP MARKING DEFINITION TO-220 (Halogen Free) SamHop Logo SDP10N60 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot Number TO-220 (Pb Free) Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 10N60 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 10 www.samhop.com.tw SDP10N60 SDF10N60 Ver 1.1 TOP MARKING DEFINITION TO-220F (Halogen Free) SamHop Logo SDF10N60 XXXXXX Product No. SMC internal code No. (A,B,C...Z) TO-220F (Pb Free) Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 10N60 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 11 www.samhop.com.tw