Green Product STU664S STD664S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON). PRODUCT SUMMARY RDS(ON) (mΩ) Max VDSS ID 60V 30A 20 Rugged and reliable. @VGS=10V TO-252 and TO-251 Package. G G D S STU SERIES TO-252AA(D-PAK) S STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A IDM -Pulsed 24 A 88 A 100 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C a EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG TC=25°C TC=70°C a c Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change without notice. Jun,05,2013 1 www.samhop.com.tw STU664S STD664S Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current VDS=48V , VGS=0V IGSS VGS= ±20V , VDS=0V Gate-Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS VGS=0V , ID=250uA Min Typ Max 60 Units V 1 uA ±100 nA 2.6 4 V Drain-Source On-State Resistance VGS=10V , ID=15A 16 20 m ohm Forward Transconductance VDS=10V , ID=15A 22 S VDS=25V,VGS=0V f=1.0MHz 2190 140 105 pF pF pF 47 ns 31 ns 62 ns VDS=VGS , ID=250uA 2 b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time b VDD=30V ID=1A VGS=10V RGEN= 6 ohm tD(OFF) Turn-Off Delay Time tf Qg Fall Time Total Gate Charge VDS=30V,ID=15A,VGS=10V Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=30V,ID=15A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=6A 13 ns 36 nC 6 nC 12 nC 0.81 1.3 V Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Jun,05,2013 2 www.samhop.com.tw STU664S STD664S Ver 1.0 30 100 80 ID, Drain Current(A) ID, Drain Current(A) VGS=10V VGS=7V 60 VGS=6V 40 VGS=5V 20 24 18 Tj=125 C 12 25 C -55 C 6 VGS=4V 0 0 1 0.5 2 1.5 0 3 2.5 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.2 50 2.0 40 30 VGS=10V 20 10 VGS=10V ID=15A 1.8 1.6 1.4 1.2 1.0 0 20 1 40 60 80 100 0 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage VDS=VGS ID=250uA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 50 75 100 125 150 Tj(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 1.2 25 Tj, Junction Temperature(°C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 3 VGS, Gate-to-Source Voltage(V) 60 0 2 1 VDS, Drain-to-Source Voltage(V) RDS(on), On-Resistance Normalized RDS(on)(mΩ) 0 100 125 150 Tj, Junction Temperature(°C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jun,05,2013 3 www.samhop.com.tw STU664S STD664S Ver 1.0 20 90 Is, Source-drain current(A) ID=15A RDS(on)(m Ω ) 75 60 45 125 C 30 75 C 15 25 C 125 C 10 5 75 C 25 C 1 0 4 2 0 6 8 0 10 C, Capacitance(pF) VGS, Gate to Source Voltage(V) 3000 Ciss 2000 1500 1000 Coss Crss 0 0 5 10 15 20 25 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage 500 0.6 VSD, Body Diode Forward Voltage(V) VGS, Gate-to-Source Voltage(V) 2500 0.3 10 VDS=30V ID=15A 8 6 4 2 0 30 0 5 10 15 20 30 25 35 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 40 100 ID, Drain Current(A) Switching Time(ns) 1000 TD(off ) TD(on) Tr Tf 10 100 R D ON S( )L im it 10 10 1m 10 DC ms 10 0u us s s 1 VGS=10V Single Pulse TC=25 C VDS=30V,ID=1A VGS=10V 0.1 1 1 10 100 0.1 Rg, Gate Resistance( Ω ) 1 10 100 VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jun,05,2013 4 www.samhop.com.tw STU664S STD664S Ver 1.0 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. R JA(t)=r(t)* R JA 2. R JA=See Datasheet 3. TJM-TA=PDM*R JA(t) 4. Duty Cycle,D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jun,05,2013 5 www.samhop.com.tw STU664S STD664S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 11.430 10.830 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.426 0.450 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Jun,05,2013 6 www.samhop.com.tw STU664S STD664S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Jun,05,2013 7 www.samhop.com.tw STU664S STD664S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Jun,05,2013 8 www.samhop.com.tw