SB3150 N0090 REV. - Sangdest Microelectronics (Nanjing) Co. Ltd.

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0090 Rev. -
Applications:
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•
•
•
•
•
SB3150
Green Products
SB3150 SCHOTTKY RECTIFIER
Disk Drives
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Battery Charging
Features:
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Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
DO-201AD
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SB3150
Technical Data
Data Sheet N0090 Rev. -
Green Products
Marking Diagram:
S B 3150
SSG XXXXX
Where XXXXX is YYWWL
SB
3
150
SSG
YY
WW
L
= Device Type
= Forward Current (3A)
= Reverse Voltage (150V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
SB3150
Package
DO-201AD
(Pb-Free)
Shipping
1250pcs / tape
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SB3150
Technical Data
Data Sheet N0090 Rev. -
Green Products
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB3150
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
Maximum RMS Voltage
VRMS
105
V
Io
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
110
A
Forward Voltage
@IF = 3.0A
VFM
0.89
V
@TA = 25°C
@TA = 125°C
IRM
1.0
7.0
mA
CJ
200
pF
Max. Voltage Rate of Change
dv/dt
10,000
V/µs
Typical Thermal Resistance Junction to Ambient
RθJA
25
K/W
TJ,TSTG
-50 to +150
°C
wt
1.02
g
Average Rectified Output Current
(Note 1)
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
Typical Junction Capacitance (Note 2)
Storage Temperature Range
Approximate Weight
Case Style
DO-201AD
Note:1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0090 Rev. -
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
SB3150
Green Products
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0090 Rev. -
SB3150
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •