MUR1660 N0307 REV. - Sangdest Microelectronics (Nanjing) Co. Ltd.

SANGDEST
MICROELECTRONICS
MUR1660
Technical Data
Data Sheet N0307, Rev. -
Green Products
MUR1660 ULTRAFAST PLASTIC RECTIFIER
Applications:
•
•
•
Switching Power Supply
Power Switching Circuits
General Purpose
Features:
•
•
•
•
•
•
•
•
Utra-Fast Switching
High Current Capability
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm
TO-220AC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MUR1660
Technical Data
Data Sheet N0307, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MUR
16
60
SSG
YY
WW
L
= Device Type
= Forward Current (16A)
= Reverse Voltage (600V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
TO-220AC
(Pb-Free)
MUR1660
Shipping
50pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle NonRepetitive Surge Current
Symbol
VRWM
IF (AV)
Condition
50% duty cycle @Tc=100°C,
rectangular wave form
Max.
600
16
Units
V
A
250
IFSM
8.3ms, Half Sine pulse
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MUR1660
Technical Data
Data Sheet N0307, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current*
Symbol
VF1
VF2
IR1
IR2
Max. Reverse Recovery Time
trr
Condition
@ 16A, Pulse, TJ = 25°C
@ 16A, Pulse, TJ = 150°C
@VR = rated VR
TJ = 25°C
@VR = 0.8 VR
TJ = 125°C
IF=500mA, IR=1A,and Irm=250mA
Max.
1.7
1.5
5
Units
V
V
μA
1
mA
50
ns
Specification
-55 to +150
-55 to +150
1.5
Units
°C
°C
°C/W
1.6
g
* Pulse width < 300 µs, duty cycle < 2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
Condition
DC operation
TO-220AC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MUR1660
Technical Data
Data Sheet N0307, Rev. -
Green Products
100
100
TJ=25℃
10
0
5
10
15
20
25
30
35
40
Instantaneous Reverse Current. ( μA)
Junction Capacitance. (PF)
1000
10
1
0.1
TJ=25℃
0.01
0.001
Reverse Voltage. (V)
10
20
30
40
50
60
70
80
90
100
Percent Of Rated Peak Reverse Voltage. (%)
Fig.2-Typical Reverse Characteristics
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current-IF(A)
TJ=125℃
100
TJ=125℃
10
TJ=25℃
1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Forward Voltage Drop-VF(V)
Fig.3-Typical Forward Voltage Drop Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0307, Rev. -
MUR1660
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •