MURF2060 N0359 REV. - Sangdest Microelectronics (Nanjing) Co

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0359, Rev. -
MURF2060
Green Products
MURF2060 ULTRAFAST PLASTIC RECTIFIER
Applications:
•
•
•
Switching Power Supply
Power Switching Circuits
General Purpose
Features:
•
•
•
•
•
•
•
•
Ultra-Fast Switching
High Current Capability
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
ITO-220AC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MURF2060
Technical Data
Data Sheet N0359, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MUR
F
20
60
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (20A)
= Reverse Voltage (600V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
ITO-220AC
(Pb-Free)
MURF2060
Shipping
50pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
VRWM
Max. Average Forward
IF (AV)
Condition
50% duty cycle @Tc=105°C,
rectangular wave form
Max. Peak One Cycle NonRepetitive Surge Current
(Per leg)
IFSM
8.3ms, Half Sine pulse
Max.
600
Units
V
20
A
250
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MURF2060
Technical Data
Data Sheet N0359, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current*
Symbol
VF1
VF2
IR1
IR2
Max. Reverse Recovery Time
trr
Condition
@ 20A, Pulse, TJ = 25°C
@ 20A, Pulse, TJ = 150°C
@VR = rated VR
TJ = 25°C
@VR = 0.8 VR
TJ = 125°C
IF=500mA, IR=1A,and Irm=250mA
Max.
1.7
1.5
Units
V
V
50
μA
3
μA
50
ns
Specification
-55 to +150
-55 to +150
3.5
Units
°C
°C
°C/W
1.6
g
* Pulse width < 300 µs, duty cycle < 2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
Condition
DC operation
ITO-220AC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MURF2060
Technical Data
Data Sheet N0359, Rev. -
Green Products
Instantaneous Reverse Current.( μA)
Junction Capacitance.(PF)
1000
TJ=25℃
100
10
0
5
10
15
20
25
30
35
100
TJ=125℃
10
1
TJ=25℃
0.1
0.01
10
40
30
40
50
60
70
80
90
Percent of Peak Reverse Voltage.(%)
Reverse Voltage.(V)
Fig.1-Typical Junction Capacitance
Instantaneous Forwar Current(A)
20
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Forward Voltage Drop-VFM(V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0359, Rev. -
MURF2060
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •