SANGDEST MICROELECTRONICS Technical Data Data Sheet N1196, Rev. B 220CNQ030 Green Products 220CNQ030 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Free-Wheeling diodes● Reverse battery protection ● Converters ● Welding Features: • • • • • • • • • 150℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/ Inches PRM4 (Non-Isolated) MARKING,MOLDING RESIN st nd Marking for 220CNQ030, 1 row SS YYWWL, 2 row 220CNQ030 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 220CNQ030 Technical Data Data Sheet N1196, Rev. B Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy(peg leg) Repetitive Avalanche Current(peg leg) Symbol VRWM IF(AV) Condition 50% duty cycle @TC =100°C, rectangular wave form IFSM 8.3 ms, half Sine pulse EAS 110 220 Max. 30 per leg per device Units V A 2880 A TJ=25℃,IAS=22A,L=0.41mH 99 mJ IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5× VR typical 22 A Symbol VF1 Condition @ 110A, Pulse, TJ = 25 °C @ 220A, Pulse, TJ = 25 °C @ 110A, Pulse, TJ = 125 °C @ 220A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.48 0.57 0.40 0.52 Units V 10 mA 560 mA 7400 pF 7.0 nH 10,000 1000 V/μs V Condition - Specification -55 to +150 -55 to +150 Units °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * VF2 Max. Reverse Current at DC condition Max. Reverse Current Max. Junction Capacitance Typical Series Inductance (per leg) Max. Voltage Rate of Change Insulation Voltage * IR1 IR2 CT LS dv/dt VRMS V Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case (per leg) Maximum Thermal Resistance Junction to Case (per device) Typical Thermal Resistance, case to Heat Sink Symbol TJ Tstg RθJC DC operation 0.50 °C/W RθJC DC operation 0.25 °C/W Rθcs Mounting surface, smooth and greased 0.10 °C/W Mounting Torque TM Approximate Weight Case Style wt Mounting Torque Terminal Torque 79 PRM4 (Non-Isolated) 24(min) 35(max) 35(min) 46(max) Kg-cm g • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1196, Rev. B 220CNQ030 Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1196, Rev. B 220CNQ030 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •