SANGDEST MICROELECTRONICS SBRF20150CT Green Products Technical Data Data Sheet N0923, Rev. A SBRF20150CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 200°°C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request OUTLINE DRAWING Mechanical Dimensions: In mm Dim A OPTION 1(CJ) Min Max 4.4 4.6 OPTION 2(HD) Min Max 4.30 4.70 b 0.6TYP 0.50 0.75 b1 1.3TYP 1.30 1.40 b2 1.7TYP 1.70 1.80 b3 1.6TYP 1.50 1.75 b4 1.2TYP 1.10 1.35 C 0.60TYP 0.50 0.75 D 14.8 15.1 14.80 15.20 E 10.06 10.26 9.96 10.36 e 2.55TYP 2.54TYP F 2.9 3.1 2.80 3.20 G 6.5 6.9 6.50 6.90 L 12.7 13.7 12.8 13.2 L1 3.4 3.8 3.60 4.00 L2 2.6 3.0 - - 2.50 Q 2.5 2.9 Q1 2.5 2.9 ØR 3.5REF 2.90 2.70REF 3.50REF • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF20150CT Green Products Technical Data Data Sheet N0923, Rev. A OPTION 3 OPTION 4 Dim Min Max Min Max A 4.53 4.93 4.50 4.90 b 0.71 0.91 0.70 0.90 b1 1.15 1.39 1.33 1.47 C 0.36 0.53 0.45 0.60 D 15.67 16.07 15.67 16.07 E 9.96 10.36 9.96 10.36 e 2.54TYP 2.54 BSC F 2.34 2.76 2.34 2.74 G 6.50 6.90 6.48 6.88 L 12.37 12.77 12.78 13.18 L1 2.23 2.63 3.03 3.43 Q 2.56 2.96 2.56 2.96 Q1 3.10 3.50 3.10 3.50 ØR 2.98 3.38 3.08 3.28 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF20150CT Green Products Technical Data Data Sheet N0923, Rev. A OPTION 5 (SR) ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF20150CT Green Products Technical Data Data Sheet N0923, Rev. A Marking Diagram: Where XXXXX is YYWWL SBR F 20 150 CT SSG YY WW L = Device Type = Package type = Forward Current (20A) = Reverse Voltage (150V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package ITO-220AB (Pb-Free) SBRF20150CT Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) IFSM Condition 50% duty cycle @TC =133°C, rectangular wave form 8.3 ms, half Sine pulse Max. 150 10(Per leg) 20(Per device) 150 Units V A A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF20150CT Green Products Technical Data Data Sheet N0923, Rev. A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Max. Reverse Current at DC condition (per leg) Repetitive peak reverse current Non-Repetitive Avalanche Energy Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * Symbol VF1 Condition @ 10A, Pulse, TJ = 25 °C Max. 0.93 VF2 IR @ 10A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C tp = 2 µs square F= 1 kHz 0.78 1.0 V mA 1 A 2 mJ 400 pF 8.0 nH 10,000 V/µs IRRM EAS CT LS dv/dt TJ = 25 °C, IAS = 2A, L = 1mH @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Units V Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg Condition - Specification -55 to +200 -55 to +200 Units °C °C RθJC DC operation 3.5 °C/W wt - 2 g ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF20150CT Green Products Instantaneous Reverse Current-IR(MA) Technical Data Data Sheet N0923, Rev. A Junction Capacitance-CT(PF) 1000 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 40 10 TJ=125℃ 1 0.1 0.001 0.0001 10 Reverse Voltage-VR(V) 20 30 40 50 60 70 80 90 Fig.2-Typical Reverse Leakage Characteristics Per Leg 100 TJ=125℃ 10 TJ=25℃ 1 0.4 0.5 100 Percent of Rated Peak R everse V oltage(% ) Fig.1-Typical Junction Capacitance Per Leg Instantaneous Forward CurrentIF(A) TJ=25℃ 0.01 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 Forward Voltage Drop-VF(V) Fig.3-Typical Forward Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0923, Rev. A SBRF20150CT Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •