8SQ045 N0361 REV. - Sangdest Microelectronics (Nanjing) Co. Ltd.

SANGDEST
MICROELECTRONICS
8SQ045
Green Products
Technical Data
Data Sheet N0361, Rev. -
8SQ045 SCHOTTKY BARRIER RECTIFIER
Applications:
:
DC-DC converters
AC adapter
High frequency rectification circuit
Bypass diodes
Features:
Super-high speed & low noise switching
Low voltage drop
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches/ mm
R-6
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
8SQ045
Green Products
Technical Data
Data Sheet N0361, Rev. -
Marking Diagram:
Where XXXXX is YYWWL
8
S
Q
045
SSG
YY
WW
L
= Forward Current (8A)
= Package Type
= Device Type
= Reverse Voltage (45V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
R-6
(Pb-Free)
8SQ045
Shipping
500pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Symbol
VRWM
IF(AV)
IFSM
Condition
50% duty cycle @TL= 119°C,
rectangular wave form
Surge applied at rated load
conditions half sine wave, 8.3ms
Max.
45
Units
V
8
A
200
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
8SQ045
Green Products
Technical Data
Data Sheet N0361, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
(per leg)
CT
Condition
@ 8 A, Pulse, TJ = 25 °C
@ 8 A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Max.
0.53
0.44
1.0
Units
V
V
mA
60.0
mA
900
pF
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature -1
Storage Temperature Range
Maximum Thermal
Resistance, Case to Heat
Sink
Maximum Thermal
Resistance, Junction to lead
Case Style
Symbol
TJ
Tstg
Condition
-
Specification
-55 to +150
-55 to +150
Units
RθJA
-
18
°C/W
RθJL
-
8
°C/W
°C
°C
R-6
* This rating is limited to the use for bypass diodes and the condition where the reverse bias voltage is not
applied.
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
8SQ045
Green Products
Technical Data
Data Sheet N0361, Rev. -
100
TJ=125℃
1000
Reverse Current (MA)
Junction Capacitance-CT(PF)
10000
TJ=25℃
100
10
1
0.1
TJ=25℃
0.01
0.001
0
5
10
15
20
25
30
35
40
10
15
20
Reverse Voltage-VR(V)
30
35
40
Fig.2-Typical Values Of Reverse Current VS.Reverse Voltage
100
10
TJ=25℃
1
0.3
45
Reverse Voltage (V)
Fig.1-Typical Junction Capacitance Vs.Reverse Voltage
Instantaneous Forward Current(A)
25
0.4
0.5
0.6
0.7
Forward Voltage Drop(V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0361, Rev. -
8SQ045
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
sales department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •