ES1(A-M) N0159 REV.C - Sangdest Microelectronics (Nanjing) Co

SANGDEST
MICROELECTRONICS
ES1A-ES1M
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Technical Data
Data Sheet N0159, Rev. D
Green Products
ES1A-ES1M SURFACE
MOUNT SUPER FAST RECTIFIER
Features:
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Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Overload Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability Classification Rating 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Data:
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Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable per MIL-STD-750,
Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.06 grams(approx)
ES1A
Mechanical Dimensions: In mm/ Inches
SMA
MARKING, MOLDING RESIN
st
nd
Marking for ES1A/B/C/D/E/G/J/K/M, 1 row ES1A/B/C/D/E/G/J/K/M, 2 row YYWWL
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
ES1A-ES1M
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Technical Data
Data Sheet N0159, Rev. D
Green Products
Ordering Information:
Device
Package
SMA
(Pb-Free)
ES1(A-M)
Shipping
5000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified
Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TL =120°C
Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward voltage
@IF =1.0A
Symbol
ES1A ES1B ES1C ES1D ES1E ES1G
ES1J ES1K
ES1M
VRRM
50
100
150
200
300
400
600
800
1000
VR(RMS)
34
70
105
140
210
280
420
560
700
Units
V
Io
1.0
A
IFSM
50
A
VF
0.95
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IR
10
350
µA
Typical junction capacitance (Note 1)
CJ
45.0
pF
Reverse Recovery Time (Note 2)
Trr
35
ns
Electro-Static Discharge
ESD
2000
V
Typical thermal resistance (Note 3)
RθJL
Operating Junction and Storage Temperature T ,T
J STG
Range
Case Style
35
K/W
-55 to +150
°C
SMA
Note: 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC
2. Measured with IF=0.5A, IR=1.0A, Irr=0.25A,
3. Mounted on P.C. Board with 8.0mm2 lead area
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0159, Rev. D
ES1A-ES1M
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0159, Rev. D
ES1A-ES1M
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - [email protected] sangdest.com.cn •