BAT42W/BAT43W SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0713, Rev. A Green Products BAT42W/BAT43W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection Designed for Surface Mount Application Plastic Material —UL Recognition Flammability Classification 94V-O Green Products in Compliance with the ROHS Directive This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Data: • • • • Case: SOD-123, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.01 grams(approx) Mechanical Dimensions: In mm / Inches SOD-123(CJ) • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • BAT42W/BAT43W SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0713, Rev. A Green Products Marking Diagram: S7/S8 BAT42W = Part Name BAT43W Cautions：Molding resin Epoxy resin UL: 94V-0 Ordering Information: Device BAT42W/BAT43W Package Shipping SOD-123(Pb-Free) 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • BAT42W/BAT43W SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0713, Rev. A Green Products Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol BAT42W/BAT43W Unit VRRM VRWM VR 30 V VR(RMS) 21 V IFM 0.2 A @t<1.0s IFRM 500 mA Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 4.0 A Pd 500 mW RθJA 200 °C/W Junction Temperature Range TJ 125 °C Storage Temperature Range TSTG -55 to +150 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Power Dissipation Typical Thermal Resistance Junction to Ambient Characteristic Symbol Min Typ Max Unit Test Condition V(BR) 30 - - V IR=10μA VF - - 1.0 V IF=200mA VF VF VF VF 0.26 - - 0.4 0.65 0.33 0.45 V V V V IF=10mA IF=50mA IF=2mA IF=15mA Reverse Leakage Current IR - - 0.5 μA VR=25V Junction Capacitance Cj - - 10 pF VR=1.0V,f=1.0MHz Reverse Breakdown Voltage All Types BAT42W BAT42W BAT43W BAT43W Forward Voltage • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • BAT42W/BAT43W SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0713, Rev. A Green Products SOD-123 Suggested Pad Layout Note：1. Controlling dimension: in millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • BAT42W/BAT43W SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0713, Rev. A Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com •