SDUR10120 SDURB10120 SDURD10120 SDURF10120 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1297, Rev. - SDUR10120/SDURB10120/SDURD10120/SDURF10120 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Features: • • • • • • • • Ultra-Fast Switching High Current Capability Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request SDUR10120 TO-220AC SDURB10120 SDURD10120 D²PAK DPAK SDURF10120 ITO-220AC Mechanical Dimensions: In mm/Inches TO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SDUR10120 SDURB10120 SDURD10120 SDURF10120 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1297, Rev. Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 4.85 0.25 2.89 0.96 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 0.61 1.37 8.85 15.6 2.70 1.40 2.20 8° D² ²PAK DPAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SDUR10120 SDURB10120 SDURD10120 SDURF10120 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1297, Rev. - SYMBOL A A1 A2 A3 b b1 b2 c D E e e1 H1 L L1 L2 L3 L4 ΦP1(上口) ΦP2(下口) Q Θ1 Θ2 Θ3 Θ4 Θ5 MIN. 4.30 1.10 2.80 2.50 0.50 1.10 1.50 0.55 14.80 9.96 6.50 12.70 1.60 0.80 0.60 3.30 2.99 2.50 TYP. 4.50 1.30 3.00 2.70 0.60 1.20 1.60 0.60 15.00 10.16 2.55 5.10 6.70 13.20 1.80 1.00 0.80 1.10 3.50 3.19 2.70 5° 4° 10° 5° 5° MAX. 4.70 1.50 3.20 2.90 0.75 1.35 1.75 0.75 15.20 10.36 6.90 13.70 2.00 1.20 1.00 1.50 3.70 3.39 2.90 ITO-220AC(HD) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SDUR10120 SDURB10120 SDURD10120 SDURF10120 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1297, Rev. - Marking Diagram: Where XXXXX is YYWWL SDUR B/D/F 10 120 SSG YY WW L SDUR10120 SDURB10120 SDURD10120 = Device Type = Package type = Forward Current (10A) = Reverse Voltage (1200V) = SSG = Year = Week = Lot Number SDURF10120 Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AC (Pb-Free) D²PAK (Pb-Free) DPAK (Pb-Free) ITO-220AC (Pb-Free) SDUR10120 SDURB10120 SDURD10120 SDURF10120 Shipping 50pcs / tube 800pcs / reel 2500pcs / reel 50 pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Symbol VRWM Io(AV) Condition 50% duty cycle @Tc=115°C, rectangular wave form IFSM 8.3ms, Half Sine pulse Max. 1200 Units V 10 A 40 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SDUR10120 SDURB10120 SDURD10120 SDURF10120 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1297, Rev. - Electrical Characteristics: Characteristics Max. Forward Voltage Drop(Per leg)* Symbol VF1 VF2 Max. Reverse Current* IR1 IR2 Max. Reverse Recovery Time trr1 Condition @10A, Pulse, TJ = 25°C @10A, Pulse, TJ = 150°C @VR = rated VR TJ = 25°C @VR = rated VR TJ = 150°C IF=1A, -di/dt=50A/us,VR=30V, and TJ = 25°C Max. 2.94 1.96 Units V V 60 µA 0.25 mA 50 ns * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Case(per leg)* Approximate Weight Case Style Symbol TJ Tstg SDUR10120 RθJC 2.3 wt 1.8 SDURB10120 SDURD10120 -55 to +175 -55 to +175 2.3 SDURF10120 Units °C °C 4.2 K/W 1.8 g 1.7 1.85 0.39 2 TO-220AC/ D PAK/ DPAK/ ITO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1297, Rev. - SDUR10120 SDURB10120 SDURD10120 SDURF10120 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •