MBR3035-45CT(-1) MBRB3035

MBR3035 /3045CT
MBRB3035 /3045CT
MBR3035 /3045CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0013, Rev. -
Green Products
MBR30…CT /MBRB30…CT /MBR30…CT-1
SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 °C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
MBR30…CT
TO-220AB
Case styles
MBRB30…CT
D2PAK
MBR30…CT-1
TO-262
Mechanical Dimensions: In Inches / mm
TO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR3035 /3045CT
MBRB3035 /3045CT
MBR3035 /3045CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0013, Rev. -
Green Products
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in
millimeters
Min. Typical Max.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
0
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
0.61
1.37
8.85
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.18
0.25BSC
5°
4°
4°
4.85
0.25
2.89
0.96
15.6
2.70
1.40
2.20
8°
D2PAK
TO-262
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR3035 /3045CT
MBRB3035 /3045CT
MBR3035 /3045CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0013, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MBR
B
30
35
CT/CT-1
SSG
YY
WW
L
MBR3045CT
= Device Type
= Package type
= Forward Current (30A)
= Reverse Voltage (35V)
= Configuration
= SSG
= Year
= Week
= Lot Number
MBRB3035CT
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
TO-220AB
(Pb-Free)
D²PAK
(Pb-Free)
MBR3035CT
MBRB3035CT
Shipping
50pcs / tube
800pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Symbol
Condition
Peak Inverse Voltage
VRWM
-
Max. Average Forward
IF(AV)
50% duty cycle @TC = 123°C,
rectangular wave form
Max. Peak One Cycle NonRepetitive Surge Current
IFSM
8.3 ms, half Sine pulse
Max.
MBR3035CT
35
MBRB3035CT
MBR3035CT-1
MBR3045CT
45
MBRB3045CT
MBR3045CT-1
15(Per leg)
30(Per Device)
Units
240
A
V
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR3035 /3045CT
MBRB3035 /3045CT
MBR3035 /3045CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0013, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current
(per leg) *
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
(per leg)
Max. Voltage Rate of Change
*
CT
dv/dt
Condition
@ 15A, Pulse, TJ = 25 °C
@ 15A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 100 °C
@VR = 4V, TC = 25 °C
fSIG = 1MHz
-
Max.
0.70
0.57
1.0
40
Units
V
V
mA
mA
500
pF
10,000
V/μs
Specification
-55 to +150
-55 to +150
Units
°C
°C
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Maximum Thermal
Resistance, Case to Heat
Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
RθJC
DC operation
1.6
°C/W
RθJA
DC operation
50
°C/W
wt
2/1.85
TO-220AB /D2PAK /TO-262
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR3035 /3045CT
MBRB3035 /3045CT
MBR3035 /3045CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0013, Rev. -
Green Products
Reverse Current-IR(MA)
100
1000
TJ=25℃
100
D
10
10
TJ=125℃
1
0.1
0.01
TJ=25℃
0.001
0
5
10
15
20
25
30
35
40
10
20
Reverse Voltage-VR(V)
30
40
50
60
70
80
90
Reverse Voltage-VR(%)
Fig.1-Typical Junction Capacitance
Instantaneous Forward CurrentIF(A)
Junction Capacitance-CT(PF)
10000
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage Drop-VF(V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0013, Rev. -
MBR3035 /3045CT
MBRB3035 /3045CT
MBR3035 /3045CT-1
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •