SBL10B60CT/FCT - Sirectifier Semiconductors

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SBL10B60CT/FCT
Power Schottky Rectifier - 10Amp 60Volt
□ Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
□ Application
-Switching-Mode Power Supply
-Solar-System Control Box
□ Absolute maximum ratings
Symbol
Ratings
Unit
Conditions
IF(AV)
10
A
Average Forward Current
VRRM
60
V
Repetitive Peak Reverse Voltage
IFSM
120
A
Peak Forward Surge Current
VF
0.55
V
Forward Voltage Drop
Tj , Tstg
-50 to +150
ºC
Operating and Storage Temperature
□ Electrical characteristics
Parameters
Symbol
Ratings
Conditions
Per Leg at IF = 5A
Maximum Instantaneous Forward Voltage
Maximum Reverse Leakage Current
VF
IR
0.65V
Tc = 25ºC
0.55V
Tc = 125ºC
Per Leg at VR = 60V
1.0mA
Tc = 25ºC
Per Leg
Typical Thermal Resistance,Junction to Case
Rθ (j-c)
2.2 ºC/W
TO-220AB
4.5 ºC/W
ITO-220AB
Note : 1.Mounted on P.C.B with copper pad size 20mm x 30mm, thickness 1.5mm
2.Reverse Surge 3.0A @ 0.004ms, 10 cycle
3.Repetitive Peak Reverse Current (IRRM) 0.5A @ Per Leg at tp = 2μs, 1kHz
November 2013 / Rev.7.0
http:// www.sirect.com
1
5
4
3
2
1
0
25
50
75
100
125
150
150
PEAK FORWARD SURGE CURRENT
AMPERES
175
120
90
60
30
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
20
50
100
Figure 2. Maximum Non-repetitive Surge Current
Figure 1. Forward Current Derating Curve
TJ = 75ºC
1
TJ = 25ºC
0.1
0.01
TJ
25
ºC
=
TJ
TJ = 125ºC
10
5.0
TJ
100
=
12
5º
C
75
ºC
10
INSTANTANEOUS FORWARD CURRENT, (A)
1000
INSTANTANEOUS REVERSE CURRENT, (mA)
10
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE (ºC)
=
AVERAGE FORWARD CURRENT
AMPERES
SBL10B60CT/FCT
1.0
0.1
0
20
40
60
80
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Figure 3. Typical Reverse Characteristics
Figure 4. Typical Forward Characteristics
1.0
CAPACITANCE, (pF)
1000
100
TJ = 25ºC
f = 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE, VOLTS
Figure 5. Typical Junction Capacitance
Sirectifier Semiconductor Inc.
U.S.A.: [email protected]
China: [email protected]
Taiwan: [email protected]
http:// www.sirect.com
Hong Kong: [email protected]
2
SBL10B60CT/FCT
SBL10B60CT
SBL10B60FCT
TO-220AB
ITO-220AB
L
B
L
B
M
C
M
C
D
D
K
K
A
A
E
E
F
O
O
G
I
J
H
F
P
G
I
N
H
J
H
A1
N
H
A1
K
K
A2
A2
DIMENSIONS
DIM
INCHES
DIMENSIONS
MM
NOTE
DIM
INCHES
MM
MIN
MAX
MIN
MAX
A
.577
.640
14.65
16.25
B
.386
.406
9.80
10.30
2.95
C
.098
.114
2.50
2.90
6.30
6.90
D
.258
.274
6.55
6.95
.350
8.25
8.90
E
.315
.331
8.00
8.40
.126
.157
3.20
4.00
F
.079
.161
2.00
4.10
G
.492
.551
12.50
14.00
G
.492
.571
12.50
14.50
H
.096
.108
2.45
2.75
H
.089
.106
2.25
2.70
I
.028
.039
0.70
1.00
I
.024
.035
0.60
0.90
J
.010
.022
0.25
0.55
J
.020
.028
0.50
0.70
K
.146
.157
3.70
4.00
K
.120
.138
3.05
3.50
L
.167
.187
4.25
4.75
L
.169
.189
4.30
4.80
M
.045
.057
1.15
1.45
M
.031
.063
0.80
1.60
N
.089
.114
2.25
2.90
N
.079
.112
2.00
2.85
O
.047
.055
1.20
1.40
O
.043
.055
1.10
1.40
P
.047
.071
1.20
1.80
MIN
MAX
MIN
MAX
A
.579
.606
14.70
15.40
B
.392
.411
9.95
10.45
C
.104
.116
2.65
D
.248
.272
E
.325
F
http:// www.sirect.com
NOTE
3