E L E C T R O N I C SBR12~SBR16 Schottky Rectifier - 1Amp 20~60Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current capability -Epitaxial construction -Lead free device SMB .155(3.94) .130(3.30) .083(2.11) .077(1.96) .190(4.75) .160(4.06) .012(0.305) .006(0.152) .096(2.44) .084(2.13) □ Mechanical data .060(1.52) .030(0.76) -Case：Molded plastic -Epoxy：UL 94V-0 rate flame retardant -Terminals：Solder plated, solderable per MIL-STD-750,method 2026 -Polarity：Color band denotes cathode end -Weight：0.002 ounce 0.064 grams .008(0.203) .002(0.051) .220(5.59) .205(5.21) □ Maximum ratings and Electrical characteristics TYPE SBR12 SBR13 SBR14 SBR15 SBR16 UNIT Maximum Recurrent Peak Reverse Voltage 20 30 40 50 60 V Maximum RMS Voltage 14 21 28 35 42 V Maximum DC Blocking Voltage 20 30 40 50 60 V Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load(JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A 1.0 A 40 A 0.50 0.70 V Maximum DC Reverse Current at Rated DC Blocking Ta = 25ºC 0.5 Voltage Ta = 100ºC 10 Typical Junction Capacitance 110 pF Typical Thermal Resistance RθJA 22 ºC/W Operating Temperature Range TJ -65 - 125 Storage Temperature Range TSTG mA -65 - 150 -65 - 150 ºC ºC January 2009 / Rev.6.3 http:// www.sirectsemi.com 1 SBR12~SBR16 1.2 100 0.8 4 6 1 SBR 12 - 0.2 1 SBR 0.4 15 SBR 0.6 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE ,℃ Figure 1. Forward Current Derating Curve PEAK FORWARD SURGE CURRENT AMPERES 50 INSTANTANEOUS FORWARD CURRENT , (A) 1.0 SBR AVERAGE FORWARD CURRENT AMPERES 1.4 -S 12 R SB 10 14 BR R1 SB 1 6 R1 SB 5 0.1 Tj=25 Pulse Width 300us 1% Duty Cycle 0.01 40 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 FORWARD VOLTAGE , VOLTS 30 Figure 4. Typical Forward Characteristics 20 10 Single Half-Sine-Wave (JEDEC METHOD) 0 100 1 2 5 10 20 50 100 REVERSE LEAKAGE CURRENT , (mA) NUMBER OF CYCLES AT 60Hz Figure 2. Maximum Non-repetitive Surge Current CAPACITANCE , (pF) 1000 100 10 1 Tj = 75℃ 0.1 Tj = 25℃ 0.01 0 10 .1 1.0 10 100 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE , (%) REVERSE VOLTAGE , VOLTS Figure 5. Typical Reverse Characteristics Figure 3. Typical Junction Capacitance Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com 2