NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Rev. V1 Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 2.5 GHz 48 V Operation 16.5 dB Gain at 2.5 GHz 55 % Drain Efficiency at 2.5 GHz 100 % RF Tested TO-272 Package RoHS* Compliant and 260°C reflow compatible Description The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. Functional Schematic The NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. 2 1 Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. 3 Pin Configuration Ordering Information * Part Number Package NPT2021 Bulk Quantity NPT2021-SMBPPR Sample Board Pin No. Pin Name Function 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Pad 1 Ground / Source 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Rev. V1 RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 350 mA Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz GSS - 14.2 - dB Saturated Output Power CW, 2.5 GHz PSAT - 47.5 - dBm Drain Efficiency at Saturation CW, 2.5 GHz SAT - 65 - % Power Gain 2.5 GHz, POUT = 45 W GP 12 12.8 - dB Drain Efficiency 2.5 GHz, POUT = 45 W 45 50 - % Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage DC Electrical Characteristics: TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 160 V IDLK - - 14 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 7 mA Gate Threshold Voltage VDS = 48 V, ID = 14 mA VT -2.5 -1.8 -0.5 V Gate Quiescent Voltage VDS = 48 V, ID = 350 mA VGSQ -2.1 -1.5 -0.3 V On Resistance VDS = 2 V, ID = 105 mA RON - 0.34 - Saturated Drain Current VDS = 7 V pulsed, pulse width 300 µs ID(SAT) - 8.2 - A 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Rev. V1 Absolute Maximum Ratings2,3,4 Parameter Absolute Maximum Drain Source Voltage, VDS 160 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 24 mA Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Thermal Characteristics5 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 48 V, TJ = 200°C RJC 1.60 °C/W 5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Rev. V1 Load-Pull Performance: VDS = 48 V, IDQ = 350 mA, TC = 25°C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Frequency (MHz) ZS () ZL () PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) 900 1.1 + j0.7 7.3 + j5.5 74 24 68 2000 1.4 - j6.1 2.9 + j2.4 65 17 68 2500 1.5 - j7.6 2.3 + j0.6 64 14 65 Impedance Reference ZS and ZL vs. Frequency ZS ZL Gain vs. Output Power 22 60 900 MHz 50 2500 MHz Drain Efficiency (%) 70 900 MHz 20 Gain (dB) Drain Efficiency vs. Output Power 24 2000 MHz 2500 MHz 18 16 14 40 30 20 10 12 25 4 2000 MHz 30 35 40 Output Power (dBm) 45 50 0 25 30 35 40 45 Output Power (dBm) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 50 NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 2.5 GHz Narrowband Circuit VGS C1 1.0 mF C2 0.1 mF C3 0.01 mF VDS C4 1000 pF C9 10 pF C8 1000pF R1 24.9 R2 0 NPT2021 C13 0.5 pF C6 0.1 mF C5 1.0 mF C11 18 pF C12 18 pF C10 15 pF RF In C7 0.01 mF L1 22 nH C15 2.4 pF C16 0.5 pF C17 2.4 pF RF Out C14 3.0 pF Description Bias Sequencing Parts measured on evaluation board (30-mil thick RO4350). The PCB’s electrical and thermal ground is provided using a standard-plated densely packed via hole array (see recommended via pattern). Turning the device ON Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (48 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 2.5 GHz Narrowband Circuit Parts list Reference Value Tolerance Manufacturer Part Number C1, C5 1.0 µF 10 % AVX 1210C105KAT2A C2, C6 0.1 µF 10 % Kemet C1206C104K1RACTU C3, C7 0.01 µF 10 % AVX 12061C103KAT2A C4, C8 1000 pF 10 % Kemet C0805C102K1RACTU C9 10 pF 5% ATC ATC800A100J C10, C11 18 pF 10 % ATC ATC800B180K C12 3.6 pF 0.1 pF Murata GQM22M5C2H3R6BB01 C13 1.5 pF 0.1 pF Murata GQM22M5C2H1R5BB01 C14, C15 2.4 pF 0.1 pF ATC ATC800B2R4B L1, L2 22 nH 5% Coilcraft 0807SQ-22N_LB R1 24.9 Ω 1% Panasonic ERJ-SIDF49R9U-ND PCB Rogers RO4350, r = 3.5, 30 mil 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Rev. V1 Typical Performance as measured in the 2.5 GHz evaluation board: CW, VDS = 48 V, IDQ = 350 mA (unless noted) Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature 70 16 +25°C -40°C +85°C +25°C -40°C +85°C 60 Drain Efficiency (%) Gain (dB) 15 14 13 12 50 40 30 20 10 11 25 30 35 40 45 0 25 50 30 Output Power (dBm) 35 40 45 Output Power (dBm) Quiescent VGS vs. Temperature -1.1 VGSQ (V) -1.2 175 mA 350 mA 525 mA -1.3 -1.4 -1.5 -1.6 -50 -25 0 25 50 75 100 Temperature (°C) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 50 NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Rev. V1 Typical 2-Tone Performance as measured in the 2.5 GHz evaluation board: 1 MHz Tone Spacing, VDS = 48 V, IDQ = 350 mA, TC = 25°C (unless noted) 2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current -15 15.5 250mA 350mA 450mA 550mA 650mA -20 14.5 -30 Gain (dB) IMD (dBc) -25 15 -35 -40 14 13.5 13 250mA 350mA 450mA 550mA 650mA 12.5 -45 12 -50 11.5 1 10 100 1 10 POUT (W-PEP) POUT (W-PEP) 2-Tone IMD vs. Output Power -15 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -20 IMD (dBc) -25 -30 -35 -40 -45 -50 -55 1 10 100 POUT (W-PEP) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 100 NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz TO-272-2 Plastic Package † All dimensions shown as inches [millimeters]. † Meets JEDEC moisture sensitivity level 3 requirements. Plating is Matte Sn . 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Rev. V1