MASW4030G
GaAs SPDT Switch
DC - 4.0 GHz
Rev. V4
Features
Pad Layout
Absorbtive or Reflective
Excellent Intermodulation Products
Excellent Temperature Stability
Fast Switching Speed: 3 ns Typical
Ultra Low DC Power Consumption
Independent Bias Control
G1
RF1
Description
The MASW4030G is an SPDT absorptive or
reflective GaAs MESFET MMIC. This part combines
small size, low insertion loss and power
consumption with high isolation. Ideal for many
applications and module use. It will function well for
designs below 4.0 GHz.
The MASW4030G is fabricated using a mature
1-micron gate length GaAs MESFET process. The
process features full chip passivation for increased
performance and reliability.
G1
RF
B
T
RF2
A
T
B C AC
G2
G2
Die Size - Inches (mm)
0.042 x 0.040 x 0.010 (1.065 x 1.015 x 0.25)
Bond Pad Dimensions
Ordering Information
Bond Pad
Dimensions - Inches (mm)
Part Number
Package
G1
0.004 x 0.008 (0.100 x 0.200)
MASW4030G
DIE
RF1, RF2
0.004 x 0.008 (0.100 x 0.200)
T
0.0065 x 0.13 (0.165 x 0.330)
A, B, Ac, Bc, G2
0.004 x 0.004 (0.100 x 0.100)
RF
0.008 x 0.006 (0.200 x 0.150)
Absolute Maximum Rating
1,2
Parameter
Absolute Maximum
Control Value (A or B)
-8.5 Vdc
Max Input RF Power
+34.0 dBm
(500 MHz - 4 GHz)
Storage Temperature
-65°C to +175°C
Operating Temperature
+175°C
Schematic
G1
RF
G1
RF2
RF1
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
50 W
T
50 W
G2
B
BC
AC
A
G2
1
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T
MASW4030G
GaAs SPDT Switch
DC - 4.0 GHz
Rev. V4
Electrical Specifications : TA = 25°C, Z0 = 50 W, -55°C to +85°C
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
dB
—
—
—
—
—
—
0.6
0.8
1.0
Isolation
DC - 1.0 GHz
Absorbtive Mode DC - 2.0 GHz
Reflective Mode DC - 2.0 GHz
DC - 4.0 GHz
dB
60
50
42
40
—
—
—
—
—
—
—
—
VSWR
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
Ratio
—
—
—
—
—
—
1.2:1
1.2:1
1.5:1
Input P-1dB
0.05 GHz (0 / -5 V, 0 / -8 V)
0.5 - 4.0 GHz (0 / -5 V, 0 / -8 V)
dBm
—
—
+24, +25
+30, +33
—
—
IP2
Two Tone Input Power up to +5 dBm
0.05 GHz
0.05 - 4.0 GHz
dBm
—
—
62
68
—
—
IIP3
Two Tone Input Power up to +5 dBm
0.05 GHz
0.05 - 4.0 GHz
dBm
—
—
39
46
—
—
Control Current
VIN Low (0 to - 0.2 V)
VIN High (-5 V @ 25 µA Typ. to -8 V)
µA
—
—
9
75
—
—
T-rise, T-fall
10% to 90% RF and 90% to 10% RF
ns
—
3
—
TON, TOFF
50% control to 90% RF, and 50% control to 10% RF
ns
—
6
—
Truth Table
Control Inputs
Condition of Bond Pad
Condition of Switch
A
B
T
G1
G2
RF1
RF2
Absorbtive
V IN Low
V IN Hi
GND
GND
—
On
Off
SPDT
V IN Hi
V IN Low
GND
GND
—
Off
On
Reflective
V IN Low
V IN Hi
—
GND
GND
On
Off
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW4030G
GaAs SPDT Switch
DC - 4.0 GHz
Rev. V4
Typical Performance @ 25°C
Isolation
Insertion Loss
75
1.00
0.75
Isolation (Absorb)
Isolation (Reflect)
70
IL (Reflect)
65
IL (Absorb)
60
55
0.50
50
45
0.25
40
0.00
35
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
Frequency (GHz)
Frequency (GHz)
VSWR
1.5
Handling Procedures
VSWR (Absorb)
1.4
Please observe the following precautions to avoid
damage:
VSWR (Reflect)
1.3
Static Sensitivity
1.2
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
1.1
1.0
0.0
1.0
2.0
3.0
4.0
Frequency (GHz)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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MASW4030G
GaAs SPDT Switch
DC - 4.0 GHz
Rev. V4
Handling Precautions
Permanent damage to the MASW4030G may occur if the following precautions are not adhered to:
A. Cleaniness—MASW4030G should be handled in a clean environment. DO NOT attempt to clean unit after
the MASW3040G is installed.
B. Static Sensitivity—All chip handling equipment and personnel should be DC grounded.
C. Transient—Avoid instrument and power supply transients while bias is applied to the MASW4030G. Use
shielded signal and bias cables to minimize inductive pick-up.
D. Bias—Apply voltage to either of the complementary control ports only when the other is grounded. No port
should be allowed to “float”.
E. General Handling—It is recommended that the MASW4030G chip be handled along the long side of the die
with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers.
Mounting
The MASW4030G is back-metalized with pd/ni/au (100/1,000, 10,000 Å) metallization. It can be die-mounted
with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat
before attachment.
Eutectic Die Attach:
A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255°C and a
tool temperature of 265°C. When not 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
approximately 290°C.
B. DO NOT expose the MASW4030G to a temperature greater than 320°C for more than 20 seconds. No
more than 3 seconds for scrubbing should be required for attachment.
Epoxy Die Attach:
A. Apply a minimum amount of epoxy and place the MASW4030G into position. A thin epoxy fillet should be
visible around the perimeter of the chip.
B. Cure epoxy per manufacturer’s recommended schedule.
C. Electrically conductive epoxy may be used by is not required.
Wire Bonding
A. Ball or wedge with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force o1 18 to 22 grams
is recommended. Ultrasonic energy and time should be adjusted to the minimum levels achieve reliable
wirebonds.
B. Wirebonds should be started on the chip and terminated on the package. GND bonds should be as short as
possible; at least three and no more than four bond wires from ground pads to package are recommended.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW4030G
GaAs SPDT Switch
DC - 4.0 GHz
Rev. V4
M/A-COM Technology Solutions Inc. All rights reserved.
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products. These materials are provided by MACOM as a service to its customers and may be used for
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specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
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5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support