NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Features
GaN on Si HEMT D-Mode Amplifier
Suitable for linear and saturated applications
Broadband operation from 20 - 1000 MHz
50 Ω Input Matched, Output Unmatched
28 V Operation
14 dB Gain @ 900 MHz
65% Drain Efficiency @ 900 MHz
100% RF Tested
Lead-Free 6 x 5 mm 8-lead PDFN Package
Halogen-Free “Green” Mold Compound
RoHS* Compliant
Description
Functional Schematic
The NPA1006 is a wideband GaN power amplifier
optimized for 20 - 1000 MHz operation. This
amplifier has been designed for saturated and linear
operation with output levels to 12.5 W (41 dBm)
assembled in a lead-free 6 x 5 mm 8-lead PDFN
plastic package.
VG
1
8
N/C
RFIN
2
7
RFOUT /
VD
RFIN
3
6
RFOUT /
VD
The NPA1006 is ideally suited for general purpose
narrowband to broadband applications in test and
measurement, defense communications, land
mobile radio and wireless infrastructure.
N/C
4
5
N/C
Input
Match
9
Paddle
Pin Designations
Ordering Information
Part Number
Package
NPA1006
Bulk Quantity
NPA1006-SMB
Sample Board
* Restrictions on Hazardous Substances, European Union
Directive 2011/65/EU.
Pin No.
Pin Name
Function
1
VG
Gate Voltage
2
RFIN
RF Input
3
RFIN
RF Input
4
N/C1
No Connection
5
N/C1
No Connection
6
RFOUT / VD
RF Output / Drain Voltage
7
RFOUT / VD
RF Output / Drain Voltage
8
N/C1
No Connection
9
Paddle2
Ground
1. All no connection pins may be left floating or grounded.
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also provide
a low thermal resistance heat path.
1
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NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
RF Electrical Specifications:
TC = 25°C , VDS = 28 V, IDQ = 88 mA, 100 - 1000 MHz Broadband Characterization Circuit
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Small Signal Gain
CW, 900 MHz
GSS
-
15.0
-
dB
Gain
CW, POUT = 41 dBm, 900 MHz
GP
12.5
14.0
-
dB
Saturated Output Power
CW, 900 MHz
PSAT
-
42.9
-
dBm
Drain Efficiency
CW, POUT = 41 dBm, 900 MHz
ηD
61
65
-
%
Power Added Efficiency
CW, POUT = 41 dBm, 900 MHz
PAE
57.5
62.4
-
%
Drain Efficiency
CW, 900 MHz
ηDSAT
-
70
-
%
Drain Voltage (VDS)
Drain Voltage
VDS
-
28
-
V
Ruggedness
All phase angles
VSWR = 15:1, No Device Damage
DC Electrical Specifications: TC = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
VGS = -8 V, VDS = 100 V
IDLK
-
6
-
mA
Gate-Source Leakage Current
VGS = -8 V, VDS = 0 V
IGLK
-
3
-
mA
Gate Threshold Voltage
VDS = 28 V, ID = 6 mA
VT
-2.5
-1.5
-0.5
V
Gate Quiescent Voltage
VDS = 28 V, ID = 88 mA
VGSQ
-2.1
-1.2
-0.3
V
On Resistance
VDS = 2 V, ID = 45 mA
RON
-
0.8
-
Ω
Saturated Drain Current
VDS = 7 V pulsed, pulse width 300 µs
ID(SAT)
-
3.5
-
A
2
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NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Absolute Maximum Ratings3,4,5
Parameter
Absolute Maximum
Drain Source Voltage, VDS
100 V
Gate Source Voltage, VGS
-10 to 3 V
Gate Current, IG
12 mA
Junction Temperature, TJ
+200°C
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
ESD Min. - Human Body Model (HBM)
+500 V
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics6
Parameter
Test Conditions
Symbol
Typical
Units
Thermal Resistance
VDS = 28 V, TJ = 200°C
ӨJC
4.6
°C/W
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
3
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For further information and support please visit:
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NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Characterization Circuit and Recommended Tuning Solution
100 - 1000 MHz Broadband
VGS
VDS
C1
10 mF
C2
0.01 mF
C3
4.7 mF
R1
49.9 W
L1
0.9 mH
RF
In
L2
5.4 nH
C4
2400 pF
Description
Parts measured on the characterization board
(20-mil thick RO4350). The PCB’s electrical and
thermal ground is provided using a standard-plated
densely packed via hole array (see recommended
via pattern).
Matching is provided using a combination of lumped
elements and transmission lines as shown in the
simplified schematic above. Recommended tuning
solution component placement, transmission lines,
and details are shown on the next page.
NPA1006
C5
4.7 pF
C6
2400 pF
RF
Out
Bias Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Recommended Via Pattern (All dimensions shown as inches)
4
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NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Characterization Circuit and Recommended Tuning Solution
100 - 1000 MHz Broadband
VGS
VDS
C1
C3
C2
RFIN
R1
L1
RFOUT
C4
L2 C5 C6
Parts List
Reference
Value
Tolerance
Manufacturer
Part Number
C1
10 µF
20%
TDK
C2012X5R1C106M085AC
C2
0.01 µF
10%
AVX
06031C103JAT2A
C3
4.7 µF
10%
TDK
C5750X7R2A475K230KA
C4, C6
2400 pF
-
Dielectric Labs, Inc.
C08BL242X-5UN-X0
C5
4.7 pF
0.1 pF
Murata
GQM2195C2E4R7BB12
R1
49.9 Ω
1%
Panasonic
ERJ-6ENF49R9V
L1
0.9 µH
10%
Coilcraft
1008AF-901XJLC
L2
5.4 nH
5%
Coilcraft
0906-5_LB
PCB
Rogers RO4350, r=3.5, 0.020”
Heat Sink
Copper Heat Sink 3.0” x 2.75”
5
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization
Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
Deembedded device S-Parameters with RG = 470 Ω
25
Broadband Circuit S-Parameters
25
0
0
s21
s21
s11
-15
-20
5
-20
-25
1.2
0
-15
5
0.2
0.4
0.6
0.8
1
s21 (dB)
10
10
0
0.2
0.4
0.6
0.8
1
s11, s22 (dB)
-10
-10
0
-5
s22
15
15
0
s11
20
-5
s22
s11, S22 (dB)
s21 (dB)
20
-25
1.2
Frequency (GHz)
Frequency (GHz)
Performance vs. Frequency at POUT = 41 dBm
Performance vs. Input Return Loss at POUT = 41 dBm
16
90
16
-10
14
-12
12
-14
10
-16
Gain (dB)
70
13
60
12
50
11
40
10
30
0
0.2
0.4
0.6
Frequency (GHz)
0.8
1
Gain
8
6
-20
0
0.2
0.4
0.6
0.8
Frequency (GHz)
6
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For further information and support please visit:
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-18
IRL
1
Input Return Loss (dB)
14
Power Added Efficiency (%)
80
PAE
Gain (dB)
Gain
15
NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization
Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
Gain vs. Frequency at PIN = 27 dBm
Gain vs. Frequency
15
15
+25°C
14
14
-40°C
13
12
Gain (dB)
Gain (dB)
+85°C
POUT = 30dBm
13
12
POUT = 40dBm
11
11
POUT = 41dBm
10
10
0
0.2
0.4
0.6
0.8
0
1
0.2
0.4
0.6
0.8
1
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Frequency
Input Return Loss at PIN = 27 dBm vs. Frequency
-12
-13
-13
POUT = 40dBm
Input Return Loss (dB)
Input Return Loss (dB)
POUT = 30dBm
POUT = 41dBm
-14
-15
-16
-17
-14
-15
-16
+25°C
-17
-40°C
+85°C
-18
-18
0
0.2
0.4
0.6
0.8
0
1
0.2
Frequency (GHz)
0.6
0.8
1
Frequency (GHz)
Power Added Efficiency vs. Frequency
Power Added Efficiency at PIN = 27 dBm vs. Frequency
90
90
POUT = 30dBm
POUT = 40dBm
POUT = 41dBm
80
70
+25°C
Power Added Efficiency (%)
Power Added Efficiency (%)
0.4
60
50
40
30
20
10
0
0.2
0.4
0.6
Frequency (GHz)
0.8
1
-40°C
80
+85°C
70
60
50
40
0
0.2
0.4
0.6
0.8
Frequency (GHz)
7
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Typical Performance as measured in the Broadband 100 - 1000 MHz Characterization
Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
Power Added Efficiency vs. POUT
Gain vs. POUT
80
Power Added Efficiency (%)
15.0
Gain (dB)
14.0
13.0
12.0
100MHz
500MHz
11.0
900MHz
10.0
10
15
20
25
30
35
40
70
100MHz
60
500MHz
50
900MHz
40
30
20
10
0
10
45
15
20
25
POUT (dBm)
40
45
75
100
Quiescent VGS vs. Temperature
-1.1
-12
100MHz
500MHz
900MHz
44mA
-1.2
88mA
150mA
-14
VGSQ (V)
Input Return Loss (dB)
35
POUT (dBm)
Input Return Loss vs. POUT
-13
30
-15
-1.3
-16
-1.4
-17
-18
10
15
20
25
30
POUT (dBm)
35
40
45
-1.5
-50
-25
0
25
50
o
Temperature ( C)
8
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NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Typical 2-Tone Performance as measured in the Broadband 100 - 1000 MHz Characterization Circuit: 1 MHz Tone Spacing, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
2-Tone Gain vs. Output Power vs. IDQ
2-Tone IMD vs. Output Power vs. IDQ
-10
17
44mA
-15
16
88mA
132mA
15
150mA
-25
176mA
Gain (dB)
IMD3 (dBc)
-20
-30
-35
14
13
-40
12
-45
11
-50
0.01
0.1
1
10
44mA
88mA
132mA
150mA
176mA
10
0.01
50
0.1
1
POUT (W-PEP)
2-Tone IMD vs. Output Power
(1 MHz Tone Spacing, IDQ = 132 mA, F = 450 MHz)
50
2-Tone IMD vs. Tone Spacing
(POUT = 41 dBm-PEP, IDQ = 132 mA, F = 450 MHz)
-10
-10
-IMD3
-15
+IMD3
-20
-20
-IMD5
+IMD5
-30
-IMD7
IMD (dBc)
IMD (dBc)
10
POUT (W-PEP)
+IMD7
-40
-25
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
-30
-35
-40
-50
-45
-60
0.01
0.1
1
POUT (W-PEP)
10
50
-50
0.1
1
10
Tone Spacing (MHz)
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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100
NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Sample Board and Recommended Tuning Solution
20 - 1000 MHz Broadband Circuit (NPA1006-SMB)
VGS
VDS
C1
10 mF
C2
0.01 mF
C3
4.7 mF
R1
470 W
R2
0W
L1
0.9 mH
L2
5.4 nH
RF
In
C4
2400 pF
NPA1006
C5
4.7 pF
C6
2400 pF
RF
Out
Parts List
Reference
Value
Tolerance
Manufacturer
Part Number
C1
10 µF
20%
TDK
C2012X5R1C106M085AC
C2
0.01 µF
10%
AVX
06031C103JAT2A
C3
4.7 µF
10%
TDK
C5750X7R2A475K230KA
C4, C6
2400 pF
-
Dielectric Labs, Inc.
C08BL242X-5UN-X0
C5
4.7 pF
0.1 pF
Murata
GQM2195C2E4R7BB12
R1
470 Ω
1%
Panasonic
ERJ-3EKF4700V
R2
0Ω
-
Panasonic
ERJ-6GEY0R00V
L1
0.9 µH
10%
Coilcraft
1008AF-901XJLC
L2
5.4 nH
5%
Coilcraft
0906-5_LB
PCB
10
Al Heat Sink
Rogers RO4350, r=3.5, 0.020”
Aluminum Heat sink
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Typical Performance as measured in the Broadband 20 - 1000 MHz Sample Board:
CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted)
Performance vs. Frequency at POUT = 41 dBm
Performance vs. Frequency at POUT= PSAT
30
80
70
15
60
10
50
5
0
70
30
Gain (dB)
Gain (dB)
20
40
0.2
0.4
0.6
0.8
20
50
10
40
0
40
0
1
0
0.2
Frequency (GHz)
0.6
0.8
1
Small Signal S-Parameters vs. Frequency
30
80
13.5
60
13.0
50
12.5
40
30
12.0
Gain
Drain Eff
20
s11
s22
25
-10
20
-15
15
-20
10
11.0
10.5
15
20
25
30
POUT (dBm)
35
40
0
45
10
-25
0
0.2
0.4
0.6
0.8
Frequency (GHz)
11
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For further information and support please visit:
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1
s11, s22 (dB)
70
Drain Efficiency (%)
14.0
-5
s21
s21 (dB)
14.5
Gain (dB)
0.4
Frequency (GHz)
Performance vs. Output Power (f = 900 MHz)
11.5
60
Gain
Psat
Drain Eff
PSAT (dBm), Drain Efficiency (%)
25
PSAT (dBm), Drain Efficiency (%)
80
Gain
Psat
Drain Eff
NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Lead-Free 6 x 5 mm 8-Lead PDFN†
All dimensions shown as inches [mm].
†
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Ni/Pd/Au
12
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NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
13
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support