NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Features
GaN on Si HEMT Depletion Mode Transistor
Suitable for Linear and Saturated Applications
Tunable from DC - 3.5 GHz
48 V Operation
13.5 dB Gain at 3.5 GHz
55 % Drain Efficiency at 3.5 GHz
100 % RF Tested
Standard package with bolt down flange
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2020 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 50 W (47 dBm) in an industry
standard surface mount package.
Functional Schematic
The NPT2020 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
2
RFIN / VG
RFOUT / VD
1
3
Flange
Ordering Information
Pin Configuration
Part Number
Package
NPT2020
Bulk Quantity
NPT2020-SMBPPR
Custom Sample Board1
NPT2020-SMB2
1250-1850 MHz
Sample Board
1. When ordering, specify application requirements (frequency,
linearity, etc.)
*
Pin No.
Pin Name
Function
1
RFIN / VG
RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Flange2
Ground / Source
2. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
RF Electrical Specifications: TA = 25 °C, VDS = 48 V, IDQ = 350 mA
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Small Signal Gain
CW, 3.5 GHz
GSS
-
14.5
-
dB
Saturated Output Power
CW, 3.5 GHz
PSAT
-
48
-
dBm
Drain Efficiency at Saturation
CW, 3.5 GHz
SAT
-
60
-
%
Power Gain
3.5 GHz, POUT = 50 W
GP
12
13.5
-
dB
Drain Efficiency
3.5 GHz, POUT = 50 W
50
55
-
%
Ruggedness: Output Mismatch
All phase angles
VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TA = 25 °C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
VGS = -8 V, VDS = 160 V
IDLK
-
-
14
mA
Gate-Source Leakage Current
VGS = -8 V, VDS = 0 V
IGLK
-
-
7
mA
Gate Threshold Voltage
VDS = 48 V, ID = 14 mA
VT
-2.5
-1.5
-0.5
V
Gate Quiescent Voltage
VDS = 48 V, ID = 350 mA
VGSQ
-2.1
-1.2
-0.3
V
On Resistance
VDS = 2 V, ID = 105 mA
RON
-
0.34
-
Saturated Drain Current
VDS = 7 V pulsed, pulse width 300 µs
ID,MAX
-
8.2
-
A
2
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NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Absolute Maximum Ratings3,4,5
Parameter
Absolute Maximum
Drain Source Voltage, VDS
160 V
Gate Source Voltage, VGS
-10 to 3 V
Gate Current, IG
28 mA
Junction Temperature, TJ
+200°C
Operating Temperature
-40°C to +55°C
Storage Temperature
-65°C to +150°C
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics6
Parameter
Test Conditions
Symbol
Typical
Units
Thermal Resistance
VDS = 48 V, TJ = 200°C
RJC
2.1
°C/W
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1A
devices.
3
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NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Load-Pull Performance: VDS = 48 V, IDQ = 350 mA, TC = 25 °C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
ZS
(Ω)
ZL
(Ω)
PSAT
(W)
GSS
(dB)
Drain Efficiency
at PSAT (%)
2700
1.6 - j7.2
2.9 + j2.3
65
16.2
58
3100
1.5 - j8.6
2.9 + j0.6
64
16.1
55
3500
1.9 - j10.7
2.9 - j0.7
62
15.7
53
Impedance Reference
ZS and ZL vs. Frequency
ZL
ZS
Gain vs. Output Power
Drain Efficiency vs. Output Power
19
60
2700 MHz
18
50
Drain Efficiency (%)
Gain (dB)
17
16
15
14
2700 MHz
3100 MHz
13
3500 MHz
35
3500 MHz
40
30
20
10
12
11
30
3100 MHz
40
Output Power (dBm)
45
50
0
30
35
40
45
Output Power (dBm)
4
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50
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
3.5 GHz Narrowband Circuit
VGS
C1
1 μF
C2
C3
C4
0.1 μF 0.01 μF 1000 pF
C11
4.7 pF
C9
10 pF
R1
24.9 Ω
C12
6.8 pF
C10
12 pF
RFIN
C14
0.7 pF
R2
0Ω
C8
C7
1000 pF 0.01 μF
C6
0.1 μF
C5
1 μF
VDS
C13
6.8 pF
C16
3.3 pF
NPT2020
C17
0.6 pF
RFOUT
C15
10 pF
Description
Parts measured on evaluation board (20-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Bias Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
5
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
3.5 GHz Narrowband Circuit
Parts list
Reference
Value
Tolerance
Manufacturer
Part Number
C1, C5
1 µF
10%
AVX
1210C105KAT2A
C2, C6
0.1 µF
10%
Kemet
C1206C104K1RACTU
C3, C7
0.01 µF
10%
AVX
12061C103KAT2A
C4, C8
1000 pF
10%
Kemet
C0805C102K1RACTU
C9
10 pF
5%
ATC
ATC800B100JT500X
C10
12 pF
5%
ATC
ATC800B120JT500X
C11
4.7 pF
+/- 0.1 pF
ATC
ATC800B4R7BT500X
C12, C13
6.8 pF
+/- 0.1 pF
ATC
ATC800B6R8BT500X
C14
0.7 pF
+/- 0.1 pF
ATC
ATC800B0R7BT500X
C15
10 pF
5%
ATC
ATC800A100JT250X
C16
3.3 pF
+/- 0.1 pF
ATC
ATC800B3R3BT500X
C17
0.6 pF
+/- 0.1 pF
ATC
ATC800B0R6BT500X
R1
24.9 Ω
1%
Panasonic
ERJ-6GEY24R9V
R2
0Ω
1%
Panasonic
ERJ-6ENF00R0V
PCB
Rogers RO4350, εr = 3.5, 20 mil
6
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Typical Performance as Measured in the 3.5 GHz Evaluation Board:
CW, VDS = 48 V, IDQ = 350 mA (unless noted)
Drain Efficiency vs. Output Power over Temperature
Gain vs. Output Power over Temperature
60
13
50
Drain Efficiency (%)
14
Gain (dB)
12
11
10
+25°C
-40°C
+55°C
9
8
30
+25°C
-40°C
+55°C
40
30
20
10
35
40
45
50
Output Power (dBm)
0
30
35
40
45
Output Power (dBm)
Quiescent VGS vs. Temperature
-1.05
175 mA
350 mA
525 mA
-1.10
VGSQ (V)
-1.15
-1.20
-1.25
-1.30
-1.35
-1.40
-50
-25
0
25
50
75
100
Temperature (°C)
7
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50
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Typical 2-Tone Performance as measured in the 3.5 GHz evaluation board:
1 MHz Tone Spacing, VDS = 48 V, IDQ = 350 mA, TC = 25 °C (unless noted)
2-Tone IMD3 vs. Output Power vs. Quiescent Current
2-Tone Gain vs. Output Power vs. Quiescent Current
-20
14.0
175mA
262mA
350mA
437mA
525mA
-25
13.0
Gain (dB)
IMD (dBc)
-30
13.5
-35
-40
12.5
12.0
11.5
175mA
262mA
350mA
437mA
525mA
11.0
-45
10.5
-50
10.0
1
10
100
1
10
POUT (W-PEP)
POUT (W-PEP)
2-Tone IMD vs. Output Power
-10
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
-20
IMD (dBc)
-30
-40
-50
-60
-70
1
10
100
POUT (W-PEP)
8
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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100
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
1250-1850 MHz Broadband Circuit
VGS
L1
27 nH
C4
10 μF
C6
47 pF
C5
47 pF
C9
100 μF
C3
47 pF
R1
110 Ω
C7
1 μF
C10
3.9 pF
RFIN
R2
0.33 Ω
C13
C1
0.2 pF 2.7 pF
NPT2020
VDS
C8
4.7 μF
C12
0.5 pF
RFOUT
C11
39 pF
C2
27 pF
Description
Parts measured on evaluation board (25-mil thick
6010LM). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Bias Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
1250-1850 MHz Broadband Circuit
Parts list
Reference
C1
C2
C3, C5, C6
C4
C7
C8
C9
C10
C11
C12
C13
L1
R1
R2
PCB
Value
2.7 pF
27 pF
47pF
10uF-16V
1.0uF-100V
4.7uF
100uF-63V
3.9pF
39pF
0.5pF
0.2pF
27nH
110 Ohms
0.33 Ohms
Tolerance
+/- 0.1pF
5%
5%
5%
5%
5%
5%
+/- 0.1pF
5%
+/- 0.1pF
+/- 0.1pF
5%
5%
5%
Vendor
ATC
ATC
ATC
Digikey
Digikey
Digikey
Panasonic
ATC
ATC
ATC
ATC
Coilcraft
Digikey
Digikey
Rogers 6010LM, εr = 10.2, 25 mil
Part Number
ATC800B2R7BT500X
ATC800B270JT500X
ATC800B470JT500X
C2012X5R1C106M085AC
C12101C105KAT2A
C5750X7R2A475K230KA
ECE-V1JA101P
ATC800B3R9BT500X
ATC800B390JT500X
ATC800B0R5BT500X
ATC800A0R2BT250X
0908SQ-27N
CR1206-JW-1100ELF
ERJ-6RQFR33V
10
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
Typical Performance as Measured in the 1250-1850 MHz Evaluation Board:
CW, VDS = 48 V, IDQ = 350 mA, TA = 25 °C (unless noted)
70
20
60
15
50
10
40
Gain
5.0
Pout
Drain Efficiency
30
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Drain Efficiency (%), Pout (W)
25
Gain & Drain Efficiency vs. Frequency (POUT = 50 W)
80
25
70
20
60
15
50
10
40
Frequency (GHz)
5.0
Pout
Drain Efficiency
30
1.2
0.0
1.9
Gain
1.3
1.4
1.5
1.6
1.7
1.8
0.0
1.9
Frequency (GHz)
60
25
50
20
40
15
30
20
10
30
10
1850 MHz
1550 MHz
1250 MHz
35
Gain (dB)
Drain Efficiency (%)
Gain & Drain Efficiency vs. POUT
5
40
45
0
50
POUT (dBm)
11
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Gain (dB)
80
Gain (dB)
Drain Efficiency (%), Pout (W)
Gain & Drain Efficiency vs. Frequency (Max Power)
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
AC360B-2 Metal-Ceramic Package†
†
Meets JEDEC moisture sensitivity level 1 requirements.
Plating is Ni / Au.
12
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
13
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support