MAAP-015030-DIE

MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Features








12 W X-Band Power Amplifier
21 dB Large Signal Gain
41 dBm Saturated Pulsed Output Power
40% Power Added Efficiency
On Chip Gate Bias Circuit
100% On-wafer DC & RF Power Tested
100% Visual Inspection to MIL-STD-833
Bare Die
Functional Schematic
VB1 VB2 VG2
4
VG1
RFIN
7
5
1
V D1
V D2
8
9
6
2 Bias
11
22
RFOUT
Description
The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs
MMIC power amplifier has a saturated pulsed output
power of 41 dBm and a large signal gain of 21 dB.
The power amplifier can be biased using a direct
gate voltage or using an on chip gate bias circuit.
This device is well suited for communication and
radar applications.
VG1
Package
MAAP-015030-DIE
Die in Vacuum release gel
pack
MAAP-015030-DIEEV1
Direct gate bias sample
board
MAAP-015030-DIEEV2
On chip gate bias sample
board
20 Bias
16
18
17
13
14
15
VB1 VB2 VG2
V D1
V D2
Pad Configuration
Pad No.
Function
Pad No.
Function
1
VG1
12
GND
2
Bias Circuit GND
13
VD2
3
No Connection
14
VD1
4
VB1
15
VG2
5
VB2
16
Bias Circuit GND
6
Bias Circuit GND
17
VB2
7
VG2
18
VB1
8
VD1
19
GND
9
VD2
20
Bias Circuit GND
10
GND
21
VG1
11
RFOUT
22
RFIN
Ordering Information
Part Number
21
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Electrical Specifications:
Freq. = 8.5 - 11.5 GHz, TA = +25°C, Duty Cycle = 5%, PIN = 20 dBm, VG = -0.9V
Parameter
Units
Min.
Typ.
Max.
Gain (Large Signal) (8.5 - 11.5 GHz)
Gain (Large Signal) (11.5 - 11.75 GHz)
dB
20
19
21
—
Gain
dB
—
25
—
Gain Flatness
dB
—
1
—
Input Return Loss
dB
—
12
—
Output Return Loss
dB
—
10
—
Saturated Output Power (8.5 - 11.5 GHz)
Saturated Output Power (11.5 - 11.75 GHz)
dBm
40
39
41
—
Power Added Efficiency
8.5 - 9.0 GHz
9.0 - 10.0 GHz
10.0 - 11.75 GHz
%
—
Drain Bias Voltage
V
—
8.0
—
Drain Current
A
—
5
5.5
35
40
40
—
Absolute Maximum Ratings1,2
Parameter
Absolute Maximum
Input Power
+23 dBm
Drain Voltage
+8.5 V
Gate Voltage
-2.0 V < VG < -0.7 V
Bias Voltage
-6.5 V < VB < -4.5 V
Drain Current
< 6.0 A
Gate Current
< 30 mA
Operating Temperature
Junction Temperature
3,4
-40°C to +85°C
+175°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near
these survivability limits.
3. Operating at nominal conditions with TJ ≤ +175°C will ensure
MTTF > 1 x 106 hours.
4. Junction Temperature (TJ) = TA + Өjc * (V * I)
Typical thermal resistance (Өjc) = 5.7°C/W.
a) For TA = 25°C,
TJ = 175°C @ 8 V, 3.29 A
b) For TA = 85°C,
TJ = 175°C @ 8 V, 1.97 A
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Bonding Diagram - On Chip Bias5
Rev. V2
Bonding Diagram - Direct Gate Bias5
5. Components C1 - C8 are all 100 pF chips.
MMIC Bare Die
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Typical Performance Curves over Voltage
Reverse Isolation vs. Frequency
Gain vs. Frequency
-20
30
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
-30
25
-40
-50
20
10
-60
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
15
8
9
10
11
-70
12
-80
8
9
11
12
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency
Input Return Loss vs. Frequency
0
0
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
-5
-10
-15
-15
-20
8
9
10
11
Frequency (GHz)
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
-5
-10
-20
10
12
8
9
10
11
Frequency (GHz)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
12
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Typical Performance Curves over Voltage
Gain vs. Frequency
Output Power vs. Frequency
30
50
25
45
20
40
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
15
10
8
9
10
11
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
35
12
30
8
9
6
60
5
48
4
36
3
24
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
2
8
9
11
12
PAE vs. Frequency
Drain Current vs. Frequency
1
10
Frequency (GHz)
Frequency (GHz)
10
11
Frequency (GHz)
VG = 0.8 V
VG = 0.9 V
VG = 1.0 V
12
12
0
8
9
10
11
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
12
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Typical Performance Curves over Frequency
Output Power vs. Input Power
Gain vs. Input Power
30
45
25
40
20
35
8.5 GHz
9.0 GHz
9.5 GHz
10.0 GHz
10.5 GHz
11.0 GHz
11.5 GHz
11.75 GHz
15
10
0
8.5 GHz
9.0 GHz
9.5 GHz
10.0 GHz
10.5 GHz
11.0 GHz
11.5 GHz
11.75 GHz
30
4
8
12
16
20
25
0
4
8
Input Power (dBm)
16
0.0040
5
8.5 GHz
9.0 GHz
9.5 GHz
10.0 GHz
10.5 GHz
11.0 GHz
11.5 GHz
11.75 GHz
4
0.0000
2
-0.0020
-0.0040
0
4
8.5 GHz
9.0 GHz
9.5 GHz
10.0 GHz
10.5 GHz
11.0 GHz
11.5 GHz
11.75 GHz
0.0020
3
8
12
16
20
0
4
8
12
16
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power
60
50
8.5 GHz
9.0 GHz
9.5 GHz
10.0 GHz
10.5 GHz
11.0 GHz
11.5 GHz
11.75 GHz
40
30
20
10
0
20
Gate Current vs. Input Power
Drain Current vs. Input Power
1
12
Input Power (dBm)
0
4
8
12
16
20
Input Power (dBm)
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
20
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Typical Performance Curves over Temperature: PIN = 19.5 dBm
Gain vs. Frequency
Output Power vs. Frequency
30
50
25
45
20
40
-40°C
-20°C
+20°C
+60°C
+80°C
15
10
8
9
10
11
-40°C
-20°C
+20°C
+60°C
+80°C
35
12
30
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
PAE vs. Frequency
Drain Current vs. Frequency
6
60
-40°C
-20°C
+20°C
+60°C
+80°C
5
50
40
4
30
3
20
2
1
-40°C
-20°C
+20°C
+60°C
+80°C
10
8
9
10
11
Frequency (GHz)
12
0
8
9
10
11
Frequency (GHz)
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
12
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Typical Performance Curves over Temperature
Gain vs. Input Power
Output Power vs. Input Power
30
45
25
40
20
35
-40°C
-20°C
+20°C
+60°C
+80°C
15
10
25
0
4
-40°C
-20°C
+20°C
+60°C
+80°C
30
8
12
16
20
0
4
8
16
20
16
20
PAE vs. Input Power
Drain Current vs. Input Power
5.0
60
4.5
50
-40°C
-20°C
+20°C
+60°C
+80°C
4.0
30
3.0
20
2.5
10
0
4
-40°C
-20°C
+20°C
+60°C
+80°C
40
3.5
2.0
12
Input Power (dBm)
Input Power (dBm)
8
12
Input Power (dBm)
16
20
0
0
4
8
12
Input Power (dBm)
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Applications Section
Application Notes
Note 1 - Biasing
The gate biasing is applied in one of the following:
1. Direct Gate Bias:- VG1 & VG2 provide the direct
gate bias input to the 2 MMIC stages. This
method of biasing allows the user to control the
total drain current without the scaling factor
provided by the bias circuit . It is recommended
that the gate voltage is supplied by both sides
of the Die. Optimum performance can be
achieved with a -0.9 V operation.
2. Bias Circuit Biasing:- Applying -5V to VB1 &
VB2 will typically draw 2A with no further adjustment necessary. Wafer lot variation may result
in some devices experiencing higher or lower
drain currents than the typical 2 A. It is
necessary to connect the Bias Circuit Ground
(Pad 2,6,16,20) to ground in order for this bias
circuit to function correctly. It is recommended
that the bias circuits on both sides of the PA
are used.
Note 3 - Decoupling Circuits
Each bias pad, VG or VB and the VD1, VD2 must
have a decoupling capacitor of 100 pF as close to
the device as possible, as is shown in the bonding
diagrams. In the case where the bias circuit is used
the additional bond wire to ground must be made
as short as possible.
Note 4 - Pulse Operation
The performance of the MAAP-015030-BD is
characterized under pulsed conditions with a duty
cycle of 5% consisting of a pulse width of 5 µS applied to the drain. Under pulsed conditions the gate
is constantly biased using either the on chip bias
circuit or using a gate voltage directly applied to the
PA. It is recommended that the die is mounted with
an adequate thermal solution.
Note 5 - CW Operation
The PA is only recommended for CW operation at
reduced drain voltages.
Note 2 - Bias Sequence
When switching on the PA, In each case, the gate
bias must be applied before the drain voltage is
applied. Both the VD1 and VD2 should be biased
from the top and bottom sides of the die.
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-015030
Power Amplifier, 13 W
8.5 - 11.75 GHz
Rev. V2
Applications Section
Handling and Assembly
Die Attachment
This product is 0.100 mm (0.004") thick and has
vias through to the backside to enable grounding to
the circuit. Microstrip substrates should be brought
as close to the die as possible. The mounting
surface should be clean and flat. If using
conductive epoxy, recommended epoxies are
Tanaka TS3332LD, Die Mat DM6030HK or
DM6030HK-Pt cured in a nitrogen atmosphere per
manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface
of the die. An epoxy fillet should be visible around
the total die periphery. For additional information
please see the MACOM "Epoxy Specifications for
Bare Die" application note. If eutectic mounting is
preferred, then a flux-less gold-tin (AuSn) preform,
approximately 0.0012 thick, placed between the die
and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides
scrubbing action to ensure total wetting to prevent
void formation in a nitrogen atmosphere is
recommended. The gold-tin eutectic (80% Au
20% Sn) has a melting point of approximately
280ºC (Note: Gold Germanium should be avoided).
The work station temperature should be 310ºC +/10ºC. Exposure to these extreme temperatures
should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force
impact are critical during placement.
Wire Bonding
Windows in the surface passivation above the bond
pads are provided to allow wire bonding to the die's
gold bond pads. The recommended wire bonding
procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance.
Gold 0.025 mm (0.001") diameter wedge or ball
bonds are acceptable for DC Bias connections.
A lum i ni um
wire
s h ou l d
be
a v oi d ed .
Thermo-compression bonding is recommended
though thermo-sonic bonding may be used
providing the ultrasonic content of the bond is
minimized. Bond force, time and ultrasonic's are all
critical parameters. Bonds should be made from
the bond pads on the die to the package or
substrate. All bonds should be as short as possible.
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298