D2254UK

TetraFET
D2254UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
E
C
D
B
8
1
2
7
R
3
6
F
5
A
4
Q
O
N
M
J
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 1GHz
PUSH–PULL
L
I
P
FEATURES
H
G
• SIMPLIFIED AMPLIFIER DESIGN
DBC4 Package
PIN 1 Source (Common) PIN 5 Source (Common)
PIN 2 Drain 1
PIN 6 Gate 2
PIN 3 Drain 2
PIN 7 Gate 1
• VERY LOW Crss
PIN 4 Source (Common) PIN 8 Source (Common)
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
0.25
Tol.
0.08
0.08
5°
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
0.07
Inches
.255
.030
45°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
0.010
• SUITABLE FOR BROAD BAND APPLICATIONS
Tol.
.003
.003
5°
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
.003
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 1MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
* Per Side
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: sales@semelab.co.uk
29W
40V
±20V
4A
–65 to 150°C
200°C
Prelim. 9/00
D2254UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
IDSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
V
VGS = 0
ID = 10mA
VDS = 12.5V
VGS = 0
2
mA
2
mA
7
V
IGSS
Gate Leakage Current
VGS = 20V
VDS = 0
VGS(th)
Gate Threshold Voltage*
ID = 10mA
VDS = VGS
gfs
Forward Transconductance*
VDS = 10V
ID = 0.4A
40
1
0.36
S
10
dB
40
%
20:1
—
TOTAL DEVICE
Common Source Power Gain
h
PO = 10W
Drain Efficiency
VDS = 12.5V
VSWR
Load Mismatch Tolerance
f = 1GHz
GPS
IDQ = 0.4A
PER SIDE
Ciss
Input Capacitance
VDS = 0
Coss
Output Capacitance
VDS = 12.5V VGS = 0
Crss
Reverse Transfer Capacitance VDS = 12.5V VGS = 0
* Pulse Test:
24
pF
f = 1MHz
20
pF
f = 1MHz
2
pF
VGS = –5V f = 1MHz
Pulse Duration = 300 ms , Duty Cycle £ 2%
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: sales@semelab.co.uk
Max. 6.0°C / W
Prelim. 9/00