2N6661M1A

N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6661M1A
•
VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0Ω
•
•
•
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
•
•
•
Integral Source-Drain Body Diode
Hermetic Metal TO-257AA Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
VGS
ID
IDM
PD
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current (1)
Total Power Dissipation at
TJ
Tstg
Operating Temperature Range
Storage Temperature Range
TC = 25°C
TC ≤ 25°C
De-rate TC > 25°C
90V
±20V
1.0A
3.0A
8.33W
66.7mW/°C
-55 to +150°C
-65 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Max.
Units
15
°C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9006
Issue 1
Page 1 of 3
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6661M1A
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
ID = 1.0µA
90
VDS = VGS
ID = 1.0mA
0.8
TC = 125°C
0.3
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Gate-Source Leakage Current
IDSS
Zero Gate Voltage
Drain Current
ID(ON)(2)
On-State Drain Current
RDS(on)
(2)
VDS(on)
(2)
Static Drain-Source
On-State Resistance
Static Drain-Source
On-State Voltage
VGS = ±20V
VDS = 72V
2.0
V
2.5
VDS = 0V
±100
TC = 125°C
±500
VGS = 0
1.0
TC = 125°C
100
VDS = 10V
VGS = 10V
VGS = 5V
ID = 0.3A
5.3
VGS = 10V
ID = 1.0A
4
1.5
gfs
VSD
trr
(2)
(2)
nA
µA
A
TC = 125°C
7.5
VGS = 5V
ID = 0.3A
1.6
VGS = 10V
ID = 1.0A
4
TC = 125°C
(2)
Units
V
TC = -55°C
IGSS
Max.
Ω
V
7.5
Forward Transconductance
VDS = 7.5V
ID = 0.475A
170
Body Diode Forward Voltage
VGS = 0
IS = 0.86A
0.7
Body Diode Reverse Recovery
VGS = 0
IS = 1.0A
mƱ
1.4
350
V
ns
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
50
Coss
Output Capacitance
VDS = 25V
40
Crss
Reverse Transfer Capacitance
f = 1.0MHz
10
td(on)
Turn-On Delay Time
VDD = 25V
10
td(off)
Turn-Off Delay Time
ID = 1.0A
RG = 50Ω
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
pF
ns
10
Document Number 9006
Issue 1
Page 2 of 3
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6661M1A
MECHANICAL DATA
Dimensions in mm (inches)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
13.38 (0.527)
13.64 (0.537)
16.38 (0.645)
16.89 (0.665)
10.41 (0.410)
10.67 (0.420)
12.07 (0.500)
19.05 (0.750)
1 2 3
0.64 (0.025)
Dia.
0.89 (0.035)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO-257AA
Pin 1 = Source
Pin 2 = Gate
Pin 3 = Drain
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Case = Isolated
Website: http://www.semelab-tt.com
Document Number 9006
Issue 1
Page 3 of 3