DUAL SILICON SWITCHING NPN TRANSISTORS TRANSISTORS 2N2222ADCSM Dual High Speed Saturated Switching Transistor Hermetic Ceramic Surface Mount Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated), Per Device VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Power Dissipation at TA = 25°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 75V 40V 6V 0.8A 500mW 2.86mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA(1) RθJSP (2) Parameters Max. Units Thermal Resistance, Junction To Ambient 350 °C/W Thermal Resistance, Junction To Solder Pads 110 °C/W Notes (1) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air. (2) Infinite sink mount to PCB Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number: 7168 Issue: 3 Page: 1 of 3 DUAL SILICON SWITCHING NPN TRANSISTORS TRANSISTORS 2N2222ADCSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated), Per Device Symbols (3) V(BR)CEO V(BR)CBO V(BR)EBO ICEX Parameters Test Conditions Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-Off Current IC = 10mA 40 IC = 10µA 75 IE = 10µA 6 ICBO Collector-Base Cut-Off Current IEBO Emitter Cut-Off Current VCE(Sat) (3) VBE(Sat) (3) hFE (3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. Typ. Max. Units V VEB = 3V VCE = 60V 10 IE = 0 VCB = 60V 10 TA = 150°C 10 µA IC = 0 VEB = 3V 10 nA IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1.0 IC = 150mA IB = 15mA IC = 500mA IB = 50mA IC = 0.1mA VCE = 10V 35 IC = 1.0mA VCE = 10V 50 IC = 10mA VCE = 10V 75 TA = -55°C 35 IC = 150mA VCE = 10V 100 IC = 150mA VCE = 1.0V 50 IC = 500mA VCE = 10V 40 DC Current Gain nA V 0.6 1.2 2.0 300 DYNAMIC CHARACTERISTICS Cobo Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 Cibo Input Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 30 ft Transition Frequency IC = 20mA VCE = 20V f = 100MHz 300 hfe IC = 1.0mA VCE = 10V f = 1.0kHz 50 300 Small Signal Current Gain IC = 10mA VCE = 10V f = 1.0kHz 75 375 td Delay Time VCC = 30V VBE = 0.5V 10 tr Rise Time IC = 150mA IB1 = 15mA 25 ts Storage Time VCC = 30V VBE = 0.5V 225 tf Fall Time IC = 150mA IB1 = IB2 = 15mA 60 pF MHz - ns Note (3) Pulse Width ≤ 380µs, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number: 7168 Issue: 3 Page: 2 of 3 DUAL SILICON SWITCHING NPN TRANSISTORS TRANSISTORS 2N2222ADCSM MECHANICAL DATA Dimensions in mm (inches) 2.54 ± 0.13 (0.10 ± 0.005) 2 3 1 4 A 6 1.40 ± 0.15 (0.055 ± 0.006) 0.23 rad. (0.009) 5 4.32 ± 0.13 (0.170 ± 0.005) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number: 7168 Issue: 3 Page: 3 of 3