IRFQ110 QUAD N–CHANNEL ENHANCEMENT

IRFQ110
MECHANICAL DATA
Dimensions in mm (inches)
QUAD N–CHANNEL
ENHANCEMENT MOSFETS
7.62(.300)
1.27(.050)
REF
1.27(.050)
REF
7.62(.300)
PIN 1
INDEX
1
0.64(.025)
REF
1.91(.075)
FEATURES
2.16(.085)
25
1.91(.075)
1.60(.063)
19
18
• LIGHTWEIGHT
• MILITARY SCREENING LEVEL OPTIONS
28
1
12
5
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• SPACE QUALITY LEVELS OPTIONS
11
11.44(.450)
SQ
LCC28 Ceramic Package
Pin 1 - Gate 1
Pin 4 - N/C
Pin 7 - N/C
Pin 10 - Source 2
Pin 13 - Drain 2
Pin 16 - Source 3
Pin 19 - Drain 3
Pin 22 - Gate 4
Pin 25 - N/C
Pin 2 - Source 1
Pin 5 - Drain 1
Pin 8 - Gate 2
Pin 11 - N/C
Pin 14 - N/C
Pin 17 - Source 3
Pin 20 - Drain 3
Pin 23 - Source 4
Pin 26 - Drain 4
Pin 28 - N/C
Pin 3 - Source 1
Pin 6 - Drain 1
Pin 9 - Source 2
Pin 12 - Drain 2
Pin 15 - Gate 3
Pin 18 - N/C
Pin 21 - N/C
Pin 24 - Source 4
Pin 27 - Drain 4
APPLICATIONS
• FAST SWITCHING
• MOTOR CONTROLS
• POWER SUPPLIES
ABSOLUTE MAXIMUM RATINGS FOR EACH CHIP(Tcase = 25°C unless otherwise stated)
100V
VDS
Drain Source Voltage
ID
Continuous Drain Current
1A
ID @Tc = 100°C
Continuous Drain Current
0.6A
IDM
Pulsed Drain Current *
VGS
Gate Source Voltage
±20V
PD
Maximum Power Dissipation
4.5W
RθJC
Thermal Resistance Junction to Case
TJ,Tstg
Operating and Storage Temperature Range
4A
27.78°C/W
-55 to +150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number ****
Issue 1
IRFQ110
ELECTRICAL CHARACTERISTICS FOR EACH CHIP(Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS Drain – Source Breakdown Voltage
VGS = 0
ID = 1mA
100
VGS(th) Gate Threshold Voltage
VDS = VGS
ID = 250µA
2.0
Typ.
Max.
4.0
IGSSF
Gate – Source Leakage Forward
VGS = 20V
100
IGSSR
Gate – Source Leakage Reverse
VGS = -20V
-100
IDSS
Zero Gate Voltage Drain Current
VDS = 80V.
VGS =0
25
TC = 125°C
250
Static Drain Source On-State
VGS = 10V
ID = 0.6A
0.70
Resistance*
VGS = 10V
ID = 1.0A
0.80
gfs
Forward Transductance *
VDS = 15V
IDS = 0.6A
Ciss
Input Capacitance
VGS = 0
VDS = 25V
Coss
Output Capacitance
f = 1MHz
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
VGS = 10V
Qgs
Gate – Source Charge
IDS = 1.0A
Qgd
Gate – Drain Charge
td(on)
Turn–On Delay Time
VDD = 50V
tr
Rise Time
RG = 24Ω
25
td(off)
Turn–Off Delay Time
(MOSFET switching times are essentially
40
tf
Fall Time
independent of operating temperature.)
40
IS
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
Modified MOS POWER
Continuous Source Current Body
RDS(on)
0.86
Unit
V
nA
µA
Ω
Ω
S( )
180
pF
82
15
VDS = 50V
15
7.5
7.5
ID = 1.0A
nC
20
ns
,
1.0
A
Diode
symbol showing the intergal
ISM
Source Current* (Body Diode)
P-N junction rectifier.
VSD
Diode Forward Voltage *
IS = 1.0A
VGS = 0
1.5
V
trr
Reverse Recovery Time
IF =1.0A
TJ = 25°C
200
ns
QRR
Reverse Recovery Charge
di / dt = 100A/µs VDD = 50V
0.83
µC
/
5
4.0
Notes
* Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number ****
Issue 1