2N7002CSM

N-CHANNEL ENHANCEMENT
MODE MOSFET
2N7002CSM
•
VDSS = 60V , ID = 115mA, RDS(ON) = 7.5Ω
•
•
•
•
•
Fast Switching
Low Threshold Voltage
Integral Source-Drain Body Diode
Hermetic Ceramic Surface Mount Package (SOT-23 compatible)
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VDS
VGS
ID
ID
IDM
PT
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current (1)
Total Power Dissipation at
TJ
Tstg
Operating Temperature Range
Storage Temperature Range
TC = 25°C
TC = 100°C
TA ≤ 25°C
De-rate TC > 25°C
60V
±40V
115mA
75mA
800mA
350mW
2.8mW/°C
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
RθJA
Thermal Resistance, Junction To Ambient
Max
Units
357
°C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8550
Issue 2
Page 1 of 3
N-CHANNEL ENHANCEMENT
MODE MOSFET
2N7002CSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
ID = 10µA
60
VGS(th)
Gate Threshold Voltage
ID = 250µA
VDS ≥ VGS
1.0
ID = 1.0mA
TA = -55°C
IGSS
Gate-Source Leakage Current
VGS = ±20V
VDS = 0V
±100
IDSS
Zero Gate Voltage
Drain Current
VGS = 0
VDS = 60V
1.0
TA = 125°C
500
VGS = 5V
ID = 50mA
1.5
VGS = 10V
ID = 0.5A
3.75
VGS = 5V
ID = 50mA
7.5
TA = 125°C
13.5
ID = 0.5A
7.5
TA = 125°C
13.5
VDS(on)
RDS(on)
(2)
gfs
VSD
(2)
(2)
(2)
Static Drain-Source
On-State Voltage
Static Drain-Source
On-State Resistance
VGS = 10V
Min.
Typ.
Max.
Units
V
2.5
2.5
V
nA
µA
V
Ω
Forward Transconductance
VDS = 10V
ID = 0.2A
80
Body Diode Forward Voltage
VGS = 0
IS = 0.2A
0.7
mƱ
1.2
V
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
50
Coss
Output Capacitance
VDS = 25V
25
Crss
Reverse Transfer Capacitance
f = 1.0MHz
5
td(on)
Turn-On Delay Time
VDD = 30V
20
td(off)
Turn-Off Delay Time
ID = 0.2A
RG = 50Ω
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
20
pF
ns
Document Number 8550
Issue 2
Page 2 of 3
N-CHANNEL ENHANCEMENT
MODE MOSFET
2N7002CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.31 rad.
(0.012)
3
2
0.76 ± 0.15
(0.03 ± 0.006)
2.54 ± 0.13
(0.10 ± 0.005)
0.51 ± 0.10
(0.02 ± 0.004)
1
1.91 ± 0.10
(0.075 ± 0.004)
0.31 rad.
(0.012)
3.05 ± 0.13
(0.12 ± 0.005)
A=
1.02 ± 0.10
(0.04 ± 0.004)
A
1.40
(0.055)
max.
LCC1 (SOT-23 Ceramic)
Underside View
Pad 1
Gate
Pad 2
Source
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Pad 3
Drain
Website: http://www.semelab-tt.com
Document Number 8550
Issue 2
Page 3 of 3