SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 150V 120V 7.0V 30A 10A 6W 34mW/°C 140W 800mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. Units 1.25 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 7506 Issue 4 Page 1 of 3 SILICON HIGH POWER NPN TRANSISTOR 2N5672 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = 50mA IB = 0 120 IC = 10mA VBE = -1.5V 150 IC = 10mA RBE = 50Ω 140 VCE = 135V VBE = -1.5V 10 ICEO Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Cut-Off Current Collector-Emitter Cut-Off Current VCE = 80V IB = 0 10 IEBO Emitter Cut-Off Current VEB = 7.0V IC = 0 10 IC = 20A VCE = 5.0V 20 IC = 15A VCE = 2.0V 20 Base-Emitter Voltage IC = 15A VCE = 5.0V 1.6 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 15A IB = 1.2A 0.75 IC = 15A IB = 1.2A 1.5 IC = 2.0A VCE = 10V (1) V(BR)CEO V(BR)CEX V(BR)CER (1) ICEX hFE (1) DC Current Gain (1) VBE (1) VCE(sat) VBE(sat) (1) Min. Typ Max. Units V mA 100 V DYNAMIC CHARACTERISTICS fT Transition Frequency Cobo Output Capacitance ton Turn-on Time VCC = 30V toff Turn-off Time IB1 = -IB2 = 1.2A f = 5.0MHz VCB = 10V 30 IE = 0 f = 1.0MHz IC = 15A MHz 900 pF 0.5 µs 2.0 Notes (1) Pulse Width ≤ 380us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 7506 Issue 4 Page 2 of 3 SILICON HIGH POWER NPN TRANSISTOR 2N5672 MECHANICAL DATA Dimensions in mm (inches) TO3 (TO-204AA) Pin 1 - Base Pin 2 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Case - Collector Website: http://www.semelab-tt.com Document Number 7506 Issue 4 Page 3 of 3