D1001UK - Farnell

TetraFET
D1001UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
C
1
2
4
3
D
E
M
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
F
G
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H
I
K
J
• SUITABLE FOR BROAD BAND APPLICATIONS
DA
PIN 1
SOURCE
PIN 2
DRAIN
• LOW Crss
PIN 3
SOURCE
PIN 4
GATE
• SIMPLE BIAS CIRCUITS
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17
5.71
9.52
6.60
0.13
4.32
2.54
20.32
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
70V
±20V
5A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Document Number 6215
Issue 1
D1001UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
V
VGS = 0
ID = 100mA
VDS = 28V
VGS = 0
1
mA
VGS = 20V
VDS = 0
1
µA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 1A
GPS
Common Source Power Gain
PO = 20W
η
Drain Efficiency
VDS = 28V
VSWR Load Mismatch Tolerance
f = 175MHz
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
IDQ = 0.1A
70
1
0.8
S
16
dB
50
%
20:1
—
Ciss
Input Capacitance
VDS = 28V
VGS = –5V f = 1MHz
60
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
30
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
2.5
pF
Rdson
Saturation Resistance
VGS = 20V
IDS = 2.5A
* Pulse Test:
1
Ω
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 3.5°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Document Number 6215
Issue 1
D1001UK
45
90
45
19
40
80
40
18
35
70
35
17
30
60
30
16
P out
25
50
Efficiency
P out
25
15
Gain
W
20
40
%
W
20
14
dB
15
30
15
13
20
10
5
10
5
0
0
0
VDS = 28V
ZDQ = 0.1A
f
= 175MHz
10
0
0.25
0.5
0.75
1
1.25
P in W
1.5
1.75
VDS = 28V
ZDQ = 0.1A
f
= 175MHz
0.25
0.5
0.75
1
1.25
P in W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
11
10
0
2
12
1.5
1.75
2
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
-10
-15
IMD3
dBc
-20
D1001UK
-25
OPTIMUM SOURCE AND LOAD IMPEDANCE
-30
-35
Frequency
MHz
175MHz
VDS = 28V
f1 = 175.0MHz
f2 = 175.1MHz
-40
-45
0
5
10
15
20
25
P out W PEP
30
35
40
ZS
Ω
5 + j14
ZL
Ω
12 – j14
IDQ = 0.1A
IDQ = 0.5A
Figure 3 – IMD vs. Output Power.
Typical S Parameters
!
#
!Freq
MHz
50
100
150
200
250
300
350
400
450
500
550
600
VDS = 28V, IDQ = 0.1A
MHZ S MA R 50
S11
mag
0.780
0.775
0.795
0.826
0.853
0.878
0.903
0.923
0.944
0.963
0.978
0.985
ang
-116
-135
-149
-159
-169
-179
171
161
151
142
136
131
S21
mag
18
9.312
6.077
4.193
3.216
2.566
1.991
1.655
1.322
1.121
0.899
0.762
ang
112
85
68
53
43
35
23
18
9
4
-2
-7
S12
mag
0.034
0.030
0.022
0.017
0.023
0.039
0.052
0.070
0.080
0.098
0.108
0.119
ang
25
11
14
44
74
89
86
84
80
76
72
66
S22
mag
0.642
0.577
0.613
0.669
0.715
0.759
0.801
0.839
0.878
0.914
0.945
0.966
ang
-85
-103
-116
-128
-139
-150
-161
-173
177
167
159
153
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]melab.co.uk
Document Number 6215
Issue 1
D1001UK
7.00
6.00
Vg=13 V
Vg=12 V
5.00
Vg=11 V
Vg=10 V
Vg=9V
4.00
Vg=8 V
IDS (A)
Vg=7 V
3.00
Vg=6 V
Vg=5 V
2.00
1.00
0.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
VDS (V)
Figure 4 – Typical IV Characteristics.
Capacitance pF
100
10
Output capacitance
Input Capacitance
Reverse transfer capacitance
1
0
5
10
15
20
25
30
Vds V
Figure 5 – Typical CV Characteristics.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Document Number 6215
Issue 1
D1001UK
+28V
15
Gate-Bias
10K
L4
100nF
10nF
1nF
10uF
10nF
9 x 6 mm
contact pad
10K
L2
T3
10-30pF
16-100pF
L3
D1001UK
T4
L1
T1
T2
10-30pF
16-100pF
4.7pF
9 x 6mm
contact
pad
D1001UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
T1
T2
T3
T4
10mm
13mm
12mm
4mm
L1
L2
L3
L4
1.5 turns 22swg enamelled copper wire, 6mm i.d.
10 turns 19swg enamelled copper wire, 6mm i.d.
1.5 turns 22swg enamelled copper wire, 6mm i.d.
13.5 turns 19swg enamelled copper wire on
Siemens B64920A618X830 ferrite core
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]
Website http://www.semelab.co.uk
Document Number
6215