BSX20 NPN SILICON EPITAXIAL TRANSISTOR

BSX20
MECHANICAL DATA
Dimensions in mm (inches)
NPN SILICON EPITAXIAL
TRANSISTOR
5 .8 4 (0 .2 3 0 )
5 .3 1 (0 .2 0 9 )
5 .3 3 (0 .2 1 0 )
4 .3 2 (0 .1 7 0 )
4 .9 5 (0 .1 9 5 )
4 .5 2 (0 .1 7 8 )
)
)
0
0
1
7
2
1
.
.
0
0
(
(
3
2
3
.
5
4
1 2 .7 (0 .5 0 0 )
m in .
3
.
)
0
0
APPLICATIONS
5
.
.
0 .4 8 (0 .0 1 9 )
0 .4 1 (0 .0 1 6 )
d ia .
n
i
0
(
m
7
.
• The BSX20 is a silicon planar epitaxial NPN transistor
2
1
in a TO-18 (TO-206AA) metal case. They are primarily
intended for very high speed saturated switching
applications
2 .5 4 (0 .1 0 0 )
N o m .
!
TO18 (TO-206AA) PACKAGE
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
Ptot
Rθj-c
Rθj-a
Tj
Tstg
Collector – Base Voltage (IE = 0)
Collector – Emitter Voltage(IB = 0)
Emitter – Base Voltage (IC = 0)
Collector Current (t = 10µs)
Total Power Dissipation Tamb ≤ 25°C
Tcase ≤ 25°C
Thermal Resistance Junction - Case
Thermal Resistance Junction - Ambient
Maximum Operating Junction Temperature
Storage Temperature
40V
15V
4.5V
0.5A
0.36W
1.2W
146°C/W
486°C/W
200°C
-65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document. 3392
Issue 1
BSX20
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
ICES
Collector Cut–off Current
ICBO
Collector Cut–off Current
Test Conditions
VCE = 40V
VCE = 15V
VCB = 20V
VCB = 20V
V(BR)CEO* Collector– Emitter Breakdown
Voltage
VCER (sus)* Collector - Emitter Sustaining
Voltage
VBE = 0
Tamb = 55°C
IE = 0
Tamb = 150°C
Max.
Unit
1
µA
0.4
µA
0.4
µA
30
µA
IC = 10mA
15
V
IB = 0
IC = 10mA
20
V
IB = 1mA
0.25
IC = 100mA
IB = 10mA
0.6
IC = 10mA
IB = 0.3mA
0.3
Base – Emitter
IC = 10mA
IB = 1mA
Saturation Voltage
IC = 100mA
IB = 10mA
Base – Emitter On Voltage
IC = 30µA
VCE = 20V
Voltage
VBE(on)*
Typ.
(RBE = 10Ω)
IC = 10mA
VCE (sat)* Collector – Emitter Saturation
VBE(sat)*
Min.
0.7
0.85
V
V
1.5
mV
350
Tamb = 100°C
hFE*
DC Current Gain
IC = 10mA
VCE = 1V
40
IC = 100mA
VCE = 2V
20
IC = 10mA
VCE = 1V
20
500
60
—
Tamb = -55°C
fT
Transition Frequency
IC = 10mA
VCE = 10V
CEBO
Emitter – Base
IC = 0
VEB = 1V
4.5
IE = 0
VCB = 5V
4
pF
Storage Time
IC = 10mA
VCC = 10V
13
ns
Turn-on Time
IB1 = -IB2 = 10mA
IC = 10mA
VCC = 3V
MHz
600
Capacitance
CCBO
Collector – Base
Capacitance
ts
ton
6
12
IB1 = 3mA
VCC = 6V
7
IC = 10mA
VCE = 3V
18
IB1 = 3mA
IB2 = -1.5mA
IC = 100mA
VCE = 6V
IB1 = 40mA
IB2 = -20mA
IC = 100mA
ns
IB1 = 40mA
toff
Turn-off Time
21
ns
*Pulsed: pulse duration = 300µs, duty cycle = 1%
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document. 3392
Issue 1