TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS DA PIN 1 SOURCE PIN 2 DRAIN • LOW Crss PIN 3 SOURCE PIN 4 GATE • SIMPLE BIAS CIRCUITS DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 87W 70V ±20V 10A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 6251 Issue 1 D1002UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 100mA VDS = 28V VGS = 0 2 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 2A GPS Common Source Power Gain PO = 40W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 175MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.2A 70 1 1.6 S 16 dB 50 % 20:1 — Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 120 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 60 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 2.0°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 6251 Issue 1 D1002UK 80 80 80 17 70 70 70 16 60 60 60 50 50 50 P out 40 Drain Efficiency P out % W f1 = 175.0MHz Idq = 0.2A 20 VDS = 28V 10 0 1 2 3 4 5 6 7 Gain 13 dB 30 30 12 20 20 11 10 10 10 0 0 0 14 Idq = 0.2A VDS = 28V 40 40 W 30 15 f1 = 175.0MHz 8 0 1 2 3 4 5 6 7 8 9 P in W P in W Pout Gain Pout Drain Efficiency Figure 1 – Power Output and Efficiency vs. Power Input. Figure 2 – Power Output & Gain vs. Power Input. -10 -15 D1002UK -20 IMD3 dBc -25 OPTIMUM SOURCE AND LOAD IMPEDANCE -30 -35 -40 f1 = 175.0MHz -45 -50 f2 = 175.1MHz VDS = 28V 0 5 10 15 20 25 30 35 40 45 50 55 60 65 P out W PEP Frequency MHz ZS Ω ZL Ω 175MHz 3.8 + j6.5 4.6 + j0.4 Idq = 0.2A Idq = 1A Figure 3 – IMD vs. Output Power. Typical S Parameters ! Vds=28V Idq=0.2A # MHZ S MA R 50 !Freq MHz 50 100 150 200 250 300 350 400 450 500 550 600 S11 mag 0.76 0.79 0.84 0.87 0.90 0.92 0.94 0.96 0.97 0.98 0.98 0.98 ang -144 -155 -163 -169 -176 177 170 163 156 150 144 141 S21 mag 15.6 7.1 4.2 2.7 1.9 1.5 1.1 0.9 0.7 0.6 0.4 0.4 ang 86 61 43 33 23 20 11 6 -2 -8 -12 -14 S12 mag 0.026 0.021 0.012 0.009 0.016 0.025 0.033 0.046 0.051 0.062 0.068 0.078 ang 1 -9 -3 47 76 87 85 82 78 76 74 67 S22 mag 0.58 0.66 0.74 0.81 0.85 0.88 0.91 0.94 0.96 0.98 0.98 0.98 ang -119 -132 -144 -154 -163 -172 -180 172 165 157 152 148 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 6251 Issue 1 D1002UK 14 12 Vg=13 V Vg=12 V Vg=11 V Vg=10 V Vg=9V Vg=8 V Vg=7 V Vg=6 V Vg=5 V 10 8 IDS (A) 6 4 2 0 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 VDS (V) Figure 4 – Typical IV Characteristics. Capacitance pF 1000 100 Output capacitance 10 Input Capacitance Reverse transfer capacitance 1 0 5 10 15 20 25 30 Vds V Figure 5 – Typical CV Characteristics. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 6251 Issue 1 D1002UK +28V 15 Gate-Bias 10K L4 100nF 10nF 1nF 10uF 10nF 9 x 6 mm contact pad 10K L2 D1002UK 10-30pF L1 T1 T2 10-30pF 16-100pF L3 T3 T4 16-100pF 4.7pF 9 x 6mm contact pad D1002UK 175MHz TEST FIXTURE Substrate 1.6mm PTFE/glass, Er=2.5 All microstrip lines W=4.4mm T1 T2 T3 T4 10mm 13mm 12mm 4mm L1 L2 L3 L4 1.5 turns 22swg enamelled copper wire, 6mm i.d. 10 turns 19swg enamelled copper wire, 6mm i.d. 1.5 turns 22swg enamelled copper wire, 6mm i.d. 13.5 turns 19swg enamelled copper wire on Siemens B64920A618X830 ferrite core Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 6251 Issue 1