buz50a–220m buz50b–220m mos power n-channel

BUZ50A–220M
BUZ50B–220M
MECHANICAL DATA
Dimensions in mm
10.6 (0.42)
4.6 (0.18)
16.5 (0.65)
0.8
(0.03)
MOS POWER N-CHANNEL
ENHANCEMENT MODE
TRANSISTORS
FEATURES
10.6 (0.42)
1.5(0.53)
3.70 Dia. Nom
• HERMETIC TO220 ISOLATED METAL
PACKAGE
1 2 3
12.70 (0.50 min)
• CECC SCREENING OPTIONS
• JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
1.0
(0.039)
2.54 (0.1)
BSC
2.70
(0.106)
Hermetically sealed version for high reliability power linear and switching applications
TO220M (TO-257AB)- Isolated Metal Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
BUZ50A
1000V
BUZ50B
1000V
VGS
Gate – Source Voltage
±20V
±20V
ID
Continious Drain Current
1.0A
1.5A
IDM
Maximum Pulsed Drain Current
4.0A
4.5A
PD
Total Power Dissipation at Tcase ≤ 25°C
Tstg
Storage Temperature Range
Tj
Operating Junction Temperature Range
75W
–65°C To 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5541
Issue 1
BUZ50A–220M
BUZ50B–220M
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS Drain – Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate – Body Leakage Current
VGS(th)* Gate Threshold Voltage
Test Conditions
RDS(on)* Drain – Source On–State
Resistance*
Max.
ID = 5.0mA
VDS = 1000V
VGS = 0V
0.25
TJ = 100°C
2.5
VGS = 20V
VDS = 0
500
VDS = VGS
ID = 1.0mA
2.0
4.5
TJ = 100°C
1.5
4.0
1000
V
10
VGS = 10V
ID = 1.0A
12
VDS = 15V
ID = 0.5A
0.5
S
VGS = 10V
ID = 0.5A
10
Ω
VGS = 0
1200
Coss
Output Capacitance
VDS = 25V
300
Crss
Reverse Transfer Capacitance
f = 1MHz
80
td(on)*
Turn–On Delay Time
TJ = 100°C
50
tr*
Rise Time
ID = 0.5A
150
td(off)*
Turn–Off Delay Time
VDS = 125V
200
tf*
Fall Time
Rgen = 50Ω
100
SOURCE – DRAIN DIODE CHARACTERISTICS
ton
Forward Turn On Time
trr
Reverse Recovery Time
nA
TJ = 100°C
Input Capacitance
Diode Forward Voltage
mA
5.0
Ciss
VSD*
Unit
ID = 0.5A
VDS(on)* Drain Source On Voltage
Forward Transconductance
Typ.
VGS = 0
VGS = 10V
gfs*
Min.
IS = 1.0A
VGS = 0V
V
pF
ns
39
1.0
250
420
V
ns
NOTE: *Pulsed : Pulse duration = 300 µs , duty cycle ≤ 2%
THERMAL DATA
RθJC
Thermal Resistance Junction – Case
1.67
RθJA
Thermal Resistance Junction – Ambient
75
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5541
Issue 1