NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VCES VEBO IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 125°C Total Power Dissipation at Derate Above 125°C Junction Temperature Range Storage Temperature Range 40V 15V 40V 4.5V 200mA 360mW 2.06mW/°C 360mW 4.80mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 486 °C/W 208.3 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5277 Issue 2 Page 1 of 3 NPN SWITCHING TRANSISTOR 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 ICES Collector-Cut-Off Current VCE = 20V IB = 0 0.4 VCB = 40V IE = 0 10 VCB = 32V IE = 0 0.2 VCB = 20V IE = 0 (1) ICBO Collector-Cut-Off Current Min. Emitter-Cut-Off Current ICEX Collector Cut-Off Current hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Max. 15 TA = 150°C IEBO Typ V 30 (2) VEB = 4.5V IC = 0 10 VEB = 4V IC = 0 0.25 VCE = 10V VBE = -0.25V µA 30 TA = 125°C IC = 10mA VCE = 0.35V 40 120 IC = 30mA VCE = 0.4V 30 120 IC = 10mA VCE = 1.0V 40 120 TA = -55°C 20 IC = 100mA VCE = 1.0V 20 IC = 10mA IB = 1.0mA 0.2 TA = 125°C 0.3 IC = 30mA IB = 3mA 0.25 IC = 100mA IB = 10mA 0.45 IC = 10mA IB = 1.0mA 0.7 TA = 125°C 0.59 Base-Emitter Saturation Voltage Units 120 0.85 TA = -55°C 1.02 IC = 30mA IB = 3mA 0.9 IC = 100mA IB = 10mA 0.8 V 1.2 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) By design only, not a production test. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5277 Issue 2 Page 2 of 3 NPN SWITCHING TRANSISTOR 2N2369A DYNAMIC CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions | hfe | Small signal forward-current transfer ratio IC = 10mA Cobo Output Capacitance Cibo Input Capacitance ts Storage Time ton Turn-On Time toff Turn-Off Time Min. VCE = 10V Typ 5 Max. Units 10 f = 100MHz VCB = 5V IE = 0 4 f = 1.0MHz VEB = 0.5V pF IC = 0 5 f = 1.0MHz IC = 10mA IB1 = IB2 = 10mA IC = 10mA VCC = 3V 13 12 IB1 = 3mA IC = 10mA VCC = 3V IB1 = 3mA IB2 = -1.5mA ns 18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO-18 (TO-206AA) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5277 Issue 2 Page 3 of 3