SILICON PNP TRANSISTOR 2N3637 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Power Dissipation at -175V -175V -5.0V -1.0A 1.0W 5.71mW/°C 5.0W 28.6mW/°C -65 to +200°C -65 to +200°C TA = 25°C Derate Above 25°C TC = 25°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJA RθJC Min. Typ. Max. Unit Thermal Resistance, Junction To Ambient 175 °C/W Thermal Resistance, Junction To Case 35 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3068 Issue 3 Page 1 of 3 SILICON PNP TRANSISTOR 2N3637 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. V(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA IB = 0 -175 IEBO Emitter Cut-Off Current VBE = -5.0V IC = 0 -10 VBE = -3.0V IC = 0 -50 VCB = -100V IE = 0 -100 TA = 150°C -10 VCB = -175V IE = 0 -10 IC = -0.10mA VCE = -10V 55 IC = -1.0mA VCE = -10V 90 IC = -10mA VCE = -10V 100 IC = -50mA VCE = -10V 100 TA = -55°C 50 IC = -150mA VCE = -10V 60 IC = -10mA IB = -1.0mA -0.3 IC = -50mA IB = -5.0mA -0.6 IC = -10mA IB = -1.0mA -0.8 IC = -50mA IB = -5.0mA IC = -30mA VCE = -30V (1) ICBO hFE Collector Cut-Off Current (1) DC Current Gain (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Typ. -0.65 Max. Unit V µA nA µA 300 V -0.9 DYNAMIC CHARACTERISTICS fT Transition Frequency hfe Small-Signal Current Gain Cobo Output Capacitance Cibo Input Capacitance ton Turn-On Time VCC = -100V VBE = 4.0V 400 toff Turn-Off Time IC = -50mA IB1 = -IB2 = -5mA 600 100 MHz f = 100MHz IC = 10mA VCE = 10V f = 1.0KHz VCB = -20V 80 IE = 0 320 10 pF 75 pF f = 1.0MHz VEB = -1.0V IC = 0 f = 1.0MHz ns Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3068 Issue 3 Page 2 of 3 SILICON PNP TRANSISTOR 2N3637 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO39 (TO-205AD) METAL PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] PIN 3 - Collector Website: http://www.semelab-tt.com Document Number 3068 Issue 3 Page 3 of 3