Ultraviolet selective SiC based UV sensor SIC01S Features • • • • • • Silicon Carbide based chip for extreme irradiation hardness Intrinsic visible blindness due to wide-bandgap semiconductor material TO-18 metal package with 0,054 mm2 active chip area other TO-type metal package on request other (larger) active chip areas on request sensors with UVA, UVB or UVC filter on request Material Source • • • The chip is manufactured in U.S.A. The direct material for housing is manufactured by Schott, Germany. Quality control is done in Germany. Maximum Ratings Parameter Operating temperature range Reverse voltage Rev. 1.4 Symbol Value Unit Topt -25 ... +70 °C VRmax 20 V Page 1 [4] Ultraviolet selective SiC based UV sensor SIC01S General Characteristics (Ta = 25 °C) Parameter Symbol Value Unit Active area A 0,054 mm2 Dark current at 1 V reverse bias Id 1 fA Capacitance C 21 pF Short circuit current at bright sun I0 ca. 50 nA Symbol Value Unit Max. spectral sensitivity Smax 0,13 A W -1 Wavelength of max. spectral sensitivity λSmax 285 nm - 210 - 380 nm Spectral Characteristics (Ta = 25 °C) Parameter Range of spectral sensitivity (S=0.1*Smax) Rev. 1.4 Page 2 [4] Ultraviolet selective SiC based UV sensor SIC01S Linear Spectral Response Logarithmic Spectral Response Rev. 1.4 Page 3 [4] Ultraviolet selective SiC based UV sensor SIC01S Application Example Pin Layout Rev. 1.4 Page 4 [4]