Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 × 0.5 mm2 with 0.22 mm2 active area • Virtual active area of approx. 4 mm2 due to integrated lens • Intrinsic visible blindness due to wide-bandgap semiconductor material • Completely insensitive to the visible (S280nm / S400nm > 104) without filters • The chip is manufactured by Cree Research Inc., U.S.A. Eigenschaften • Breitband UVA-UVB-UVC Photodiode für schwache und gerichtete Strahlung • Optimal zur Flammenerkennung einsetzbar • Siliziumkarbidchip mit extrem niedrigem Rauschen und Dunkelstrom • Chipabmessungen von 0.5 × 0.5 mm2 mit 0.22 mm2 aktiver Fläche • Virtuelle aktive Fläche von etwa 4 mm2 durch Linsenkappe • hohe intrinsische Unempfindlichkeit gegenüber dem sichtbaren Licht durch Halbleitermaterial mit hoher Bandlücke • Vollständig unempfindlich für sichtbares Licht (S280nm / S400nm > 104) ohne Filtereinsatz • Rev. 1.4 Chiphersteller: Cree Research Inc., U.S.A. Page 1 [4] Ultraviolet selective SiC based UV sensor SIC01M – LENS Maximum Ratings Parameter Operating temperature range Reverse voltage Symbol Value Unit Topt -25 ... +70 °C VRmax 20 V General Characteristics (Ta = 25 °C) 2 Active chip area A 0.22 mm Dark current at 1 V reverse bias Id 2 fA Capacitance C 80 pF Aperture angle α +/- 2.5 deg Short circuit current from cigarette lighter at 1 m distance I0 ca. 2 pA Symbol Value Unit Max. spectral sensitivity (chip) Smax 0.13 AW Wavelength of max. spectral sensitivity λSmax 280 nm - 220 - 360 nm Spectral Characteristics (Ta = 25 °C) Parameter Range of spectral sensitivity (S=0.1*Smax) Rev. 1.4 -1 Page 2 [4] Ultraviolet selective SiC based UV sensor SIC01M – LENS Linear Spectral Response Logarithmic Spectral Response Rev. 1.4 Page 3 [4] Ultraviolet selective SiC based UV sensor SIC01M – LENS Application Example Pin Layout Rev. 1.4 Page 4 [4]