LED23-SMD3

LED23-SMD3
TECHNICAL DATA
Mid-Infrared Light Emitting Diode, SMD
Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown
on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid
solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED23-SMD3 has a stable ouput power and a lifetime more then 80000 hours.
Features
•
•
•
•
Structure: GaInAsSb/AlGaAsSb
Peak Wavelength: typ. 2.35 µm
Optical Ouput Power: typ. 0.8 mW qCW
Package: SMD 3x3 mm
Specifications
T=300 K
150 mA CW
Min.
2.33
170
Rating
Typ.
2.35
220
Max.
2.39
270
200 mA qCW
0.6
0.8
1.0
mW
1A
12
15
20
mW
T=300 K
200 mA qCW
10
20
30
ns
V
Item
Condition
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Unit
µm
nm
-240 … +50
°C
300x300
µm
180
°C
SMD type package 3x3 mm based on high
thermal conductivity ceramics
Operating Regime
Quasi-CW
•
•
Maximum current 220 mA
Recommended current 150-200mA
Pulsed
•
06.10.2010
LED23-SMD3
Maximum current 1 A
(puls lenght 500 ns, repetition rate 2kHz)
1 of 2
Typical Performance Curves
Package
• Tiny package for surface mounting
• Anode and cathode are led to the metalized areas on the back side of the ceramic surface
• Material – Low Temperature Co-fired Ceramic (LTCC):
- thermal conductivity 25 W/mK
- thermoresistance 8 °C/W
06.10.2010
LED23-SMD3
2 of 2