Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 × 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material • Completely insensitive to the visible (S280nm / S400nm > 104) without filters • The chip is manufactured by Cree Research Inc., U.S.A. Eigenschaften • Breitband UVA-UVB-UVC Photodiode im TO18 Metallgehäuse • Siliziumkarbidchip garantiert extreme Strahlungsfestigkeit • Chipabmessungen von 0.5 × 0.5 mm2 mit 0.22 mm2 aktiver Fläche • hohe intrinsische Unempfindlichkeit gegenüber dem sichtbaren Licht durch Halbleitermaterial mit hoher Bandlücke • Vollständig unempfindlich für sichtbares Licht (S280nm / S400nm > 104) ohne Filtereinsatz • Rev. 1.4 Chiphersteller: Cree Research Inc., U.S.A. Page 1 [4] Ultraviolet selective SiC based UV sensor SIC01L-18 Maximum Ratings Parameter Symbol Value Unit Topt -25 ... +70 °C VRmax 20 V Symbol Value Unit Active area A 0.96 mm2 Dark current at 1 V reverse bias Id 5 fA Capacitance C 200 pF Short circuit current at bright sun I0 ca. 800 nA Symbol Value Unit Max. spectral sensitivity Smax 0.13 A W -1 Wavelength of max. spectral sensitivity λSmax 280 nm - 220 - 360 nm Operating temperature range Reverse voltage General Characteristics (Ta = 25 °C) Parameter Spectral Characteristics (Ta = 25 °C) Parameter Range of spectral sensitivity (S=0.1*Smax) Rev. 1.4 Page 2 [4] Ultraviolet selective SiC based UV sensor SIC01L-18 Linear Spectral Response Logarithmic Spectral Response Rev. 1.4 Page 3 [4] Ultraviolet selective SiC based UV sensor SIC01L-18 Application Example Pin Layout Rev. 1.4 Page 4 [4]